摘要:
There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
摘要翻译:这里公开了使用220nm以下的光进行光刻的光致抗蚀剂材料,其包含至少由下式(2)表示的聚合物和通过曝光产生酸的光酸发生剂:其中R 1 R 2,R 3,R 5和R 5各自为氢原子或甲基; R 4是酸不稳定基团,具有7-13个碳原子的脂环族烃基,其具有酸不稳定基团,具有7至13个碳原子的脂环族烃基,其具有羧基 ,或具有3〜13个碳原子的烃基,具有环氧基; R 6是氢原子,具有1〜12个碳原子的烃基或具有7〜13个碳原子的脂环族烃基,其具有羧基; x,y和z是满足x + y + z = 1,0,0 是氢原子或甲基,R 9是具有脂环族内酯结构的7-16个碳原子的烃基。
摘要:
A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] so that the chemically amplified photo-resist is improved in resolution, sensitivity and smoothness on side surfaces of a transferred pattern.
摘要:
A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.
摘要翻译:光致抗蚀剂组合物含有光酸产生剂和由下式表示的聚合物:其中R4,R6和R9各自表示氢原子或甲基,R5和R7各自表示含有桥连环状烃基的C17-23二价烃基 R8表示酸分解基团,R10表示氢原子或C1-12烃基,x + y + z等于1,x,y和z表示0至1,0,...,0至 0.9,重均分子量为1,000〜500,000。 根据本发明,可以提供对220nm以下的放射线的透明度高,耐腐蚀性提高的化学改性光致抗蚀剂组合物。
摘要:
A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.
摘要翻译:光致抗蚀剂组合物含有光酸产生剂和由下式表示的聚合物:其中R4,R6和R9各自表示氢原子或甲基,R5和R7各自表示含有桥连环状烃基的C17-23二价烃基 R8表示酸分解基团,R10表示氢原子或C1-12烃基,x + y + z等于1,x,y和z表示0至1,0,...,0至 0.9,重均分子量为1,000〜500,000。 根据本发明,可以提供对220nm以下的放射线的透明度高,耐腐蚀性提高的化学改性光致抗蚀剂组合物。
摘要:
Photoresist material for lithography using a light of 220 nm or less comprising at least a polymer represented by following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5, each a hydrogen atom or a methyl group; R4, an acid-labile group or one of a specified subset of alicyclic hydrocarbon groups, alicyclic hydrocarbon groups, or hydrocarbon groups; R6, a hydrogen atom, a specified subset of hydrocarbon groups or alicyclic hydrocarbon groups; x, y and z are optional values which meet x+y+z=1, 0
摘要翻译:使用220nm以下的光的光刻胶材料,至少含有下述式(2)所示的聚合物和通过曝光产生酸的光酸发生剂,其中R1,R2,R3和R5分别为氢原子 或甲基; R4,酸不稳定基团或脂环族烃基,脂环族烃基或烃基的特定子集之一; R6,氢原子,烃基或脂环族烃基的特定子集; x,y和z是满足x + y + z = 1,0,0
摘要:
Provided are: a resin composition for the formation of an optical waveguide, which shows low transmission loss and high heat stability and enables to form a waveguide pattern at high shape accuracy and at low cost; an optical waveguide; a method of forming an optical waveguide; and an optical element using the method. A photosensitive resin composition is used, which includes a polyamic acid represented by a general formula (I) or a polyamic acid ester (A), a compound (B) having an epoxy group, and a compound (C) which generates an acid by being exposed to light.
摘要:
There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
摘要翻译:这里公开了使用220nm以下的光的光刻胶材料,该光致抗蚀剂材料至少包含由下式(2)表示的聚合物和通过曝光产生酸的光酸发生剂:其中R1,R2,R3 和R 5各自为氢原子或甲基; R4是酸不稳定基团,具有7〜13个碳原子的脂环族烃基,其具有酸不稳定基团,具有7〜13个碳原子的脂环族烃基,其具有羧基或具有3〜 13个碳原子,其具有环氧基; R6为氢原子,碳原子数1〜12的烃基或碳原子数为7〜13的脂环族烃基,具有羧基; x,y和z是满足x + y + z = 1,0,0
摘要:
As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R1 and R2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.
摘要翻译:作为适用于化学放大型抗蚀剂中使用的抗蚀剂树脂的聚合物,其可应用于使用180nm以下的曝光光的光刻法,作为聚合物,其具有提高的透明性,提供了包含由单体聚合得到的重复单元的聚合物 表现出聚合活性,其中所述单体具有由通式(1)表示的含氟缩醛或缩酮结构:其中R表示含有表现出聚合活性的碳 - 碳双键的原子团; R 1和R 2中的至少一个是具有1至20个碳原子的氟化烷基或氟化芳基; R 3表示选自氢原子,烷基,烷氧基取代的烷基,氟化烷基,芳基,氟化芳基,芳烷基和含氟芳烷基的基团 至20个碳原子。
摘要:
There is disclosed a photosensitive resin composition for interlayer insulating films, surface protection films or the like, which exhibits excellent resolution and can be developed with an aqueous alkaline solution. The photosensitive resin composition is prepared using a polymer at least having a constitutional repeating unit represented by general formula II: wherein R1 represents hydrogen atom or methyl group; R2 to R9 independently represent hydrogen atom, halogen atom or alkyl group having 1 to 4 carbon atoms; X represents —CH═N—, —CONH—, —(CH2)n—CH═N— or —(CH2)n—CONH— and the N atom in X is bonded to a carbon atom in the benzene ring having AO— at an o-position; A represents hydrogen atom or a group being decomposed by an acid; and n represents a positive integer of 1 to 3.
摘要翻译:公开了一种用于层间绝缘膜,表面保护膜等的感光性树脂组合物,其表现出优异的分辨率并且可以用碱性水溶液显影。 感光性树脂组合物使用至少具有由通式II表示的结构重复单元的聚合物制备,其中R 1表示氢原子或甲基; R 9至R 9独立地表示氢原子,卤素原子或具有1至4个碳原子的烷基; X表示-CH-N-,-CONH-, - (CH 2)n-CH-N-或 - (CH 2)n SUB > -CONH-,X中的N原子与位于AO的苯环中的碳原子键合; A表示氢原子或被酸分解的基团; n表示1〜3的正整数。
摘要:
Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y− represents a counter ion.