Method of measurement, an inspection apparatus and a lithographic apparatus
    31.
    发明授权
    Method of measurement, an inspection apparatus and a lithographic apparatus 有权
    测量方法,检查装置和光刻设备

    公开(公告)号:US08111398B2

    公开(公告)日:2012-02-07

    申请号:US12770153

    申请日:2010-04-29

    IPC分类号: G01B11/00 G03C5/00

    CPC分类号: G03F7/70633 H01L22/12

    摘要: According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of −d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.

    摘要翻译: 根据示例,衬底的第一层包括具有周期P的多个光栅。衬底的第二层包括与第一组光栅重叠并且具有NP的周期性的多个光栅,其中N 是大于2的整数。第一组光栅具有+ d的偏置,第二组光栅具有-d的偏置。 将辐射束投射到光栅上,并检测到反射辐射的角度分辨光谱。 然后使用反射辐射的角度分辨光谱计算覆盖误差。

    Method and apparatus for angular-resolved spectroscopic lithography characterization
    39.
    发明申请
    Method and apparatus for angular-resolved spectroscopic lithography characterization 审中-公开
    用于角分辨光谱光刻特征的方法和装置

    公开(公告)号:US20080036984A1

    公开(公告)日:2008-02-14

    申请号:US11500494

    申请日:2006-08-08

    IPC分类号: G03B27/42

    摘要: A combined alignment and overlay target to be applied to a substrate to enable measurement of the alignment of the substrate with respect to its surroundings, and measurement of the relative alignment of a series of layers on the substrate, is disclosed. In an embodiment, the target comprises an array of structures substantially equidistant apart except for a portion of the structures that are offset by a specific amount in a first direction, and a second portion of the structures that are offset by the same amount in the opposite direction. This target on the substrate may be used to measure its alignment and the same target applied to a second layer, superposed on a first layer, may be used to measure overlay.

    摘要翻译: 公开了一种组合的对准和覆盖目标,其被施加到衬底以使得能够相对于其周围环境对衬底的对准进行测量,并且测量衬底上的一系列层的相对对准。 在一个实施例中,目标包括基本上等距离的结构的阵列,除了在第一方向上偏移了特定量的结构的一部分,以及在相反的位置上被相同量偏移的结构的第二部分 方向。 衬底上的该目标可以用于测量其对准,并且应用于叠加在第一层上的第二层的相同目标可用于测量覆盖层。

    Lithographic apparatus
    40.
    发明授权
    Lithographic apparatus 有权
    平版印刷设备

    公开(公告)号:US06768539B2

    公开(公告)日:2004-07-27

    申请号:US10043271

    申请日:2002-01-14

    IPC分类号: G03B2742

    摘要: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system

    摘要翻译: 光刻投影装置设置有内置在晶片台中的光学系统,用于产生设置在晶片背面的晶片标记的图像。 图像位于晶片正面的平面上,并且可以通过对准系统从晶片的正面观察。 可以使用预先存在的对准系统来执行晶片背面和前面的标记与掩模之间的同时对准