公开(公告)号：US20100177551A1

公开(公告)日：2010-07-15

申请号：US12352693

申请日：2009-01-13

申请人： Yiran Chen ,  Daniel S. Reed ,  Yong Lu ,  Harry Hongyue Liu ,  Hai Li ,  Rod V. Bowman

发明人： Yiran Chen ,  Daniel S. Reed ,  Yong Lu ,  Harry Hongyue Liu ,  Hai Li ,  Rod V. Bowman

IPC分类号： G11C11/00 ,  G11C11/416

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0069

摘要： Various embodiments of the present invention are generally directed to a method and apparatus for providing different bit set modes for a resistive sense memory (RSM) array, such as a spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) array. In accordance with some embodiments, a group of RSM cells in a non-volatile semiconductor memory array is identified for application of a bit set operation. A bit set value is selected from a plurality of bit set values each separately writable to the RSM cells to place said cells in a selected resistive state. The selected bit set value is thereafter written to at least a portion of the RSM cells in the identified group.

摘要翻译： 本发明的各种实施例一般涉及一种用于为电阻式感测存储器（RSM）阵列提供不同的比特设置模式的方法和装置，诸如自旋转矩传递随机存取存储器（STRAM）或电阻随机存取存储器（RRAM） ）数组。 根据一些实施例，识别非易失性半导体存储器阵列中的一组RSM单元用于位设置操作的应用。 从对RSM单元分别写入的多个位设置值中选择位设置值，以将所述单元置于选择的电阻状态。 所选位设定值此后被写入所识别的组中的RSM单元的至少一部分。

公开(公告)号：US20100118602A1

公开(公告)日：2010-05-13

申请号：US12270056

申请日：2008-11-13

申请人： Andrew John Carter ,  Yiran Chen ,  Yong Lu ,  Harry Hongyue Liu

发明人： Andrew John Carter ,  Yiran Chen ,  Yong Lu ,  Harry Hongyue Liu

IPC分类号： G11C11/14

CPC分类号： G11C5/063 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2213/72 ,  G11C2213/74

摘要： A memory array includes a plurality of first and second source, lines overlapping a plurality of bit lines, and a plurality of magnetic storage elements, each coupled to a corresponding first and second source line and to a corresponding bit line. Current may be driven, in first and second directions, through each magnetic element, for example, to program the elements. Diodes may be incorporated to avert sneak paths in the memory array. A first diode may be coupled between each magnetic element and the corresponding first source line, the first diode being biased to allow read and write current flow through the magnetic element, from the corresponding first source line; and a second diode may be coupled between each magnetic element and the corresponding second source line, the second diode being reverse-biased to block read and write current flow through the magnetic element, from the corresponding second source line.

摘要翻译： 存储器阵列包括多个第一和第二源，与多个位线重叠的线，以及多个磁存储元件，每个磁存储元件分别耦合到对应的第一和第二源极线以及相应的位线。 电流可以在第一和第二方向上通过每个磁性元件被驱动，例如编程元件。 可以并入二极管以避免存储器阵列中的潜行路径。 第一二极管可以耦合在每个磁性元件和对应的第一源极线之间，第一二极管被偏置以允许读取和写入电流从相应的第一源极线流过磁性元件; 并且第二二极管可以耦合在每个磁性元件和对应的第二源极线之间，所述第二二极管被反向偏置以阻挡从对应的第二源极线读取和写入通过磁性元件的电流。

公开(公告)号：US20100117160A1

公开(公告)日：2010-05-13

申请号：US12407823

申请日：2009-03-20

申请人： Chulmin Jung ,  Maroun Georges Khoury ,  Yong Lu ,  Young Pil Kim

发明人： Chulmin Jung ,  Maroun Georges Khoury ,  Yong Lu ,  Young Pil Kim

IPC分类号： H01L29/00 ,  H01L21/425

CPC分类号： G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L29/1083

摘要： Polarity dependent switches for resistive sense memory are described. A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically connects to the bit contact. The source contact and the bit contact are asymmetrically implanted with dopant material.

摘要翻译： 描述了用于电阻读出存储器的极性依赖开关。 存储单元包括电阻读出存储单元，配置为在通过电阻读出存储单元的电流和与电阻读出存储单元电连接的半导体晶体管时，在高电阻状态和低电阻状态之间切换。 半导体晶体管包括形成在基板上的栅极元件。 半导体晶体管包括源极触点和位触点。 门元件电连接源触点和触点触点。 电阻式感测存储单元电连接到位触点。 源极接触和位触点用掺杂剂材料非对称地注入。

公开(公告)号：US20100091548A1

公开(公告)日：2010-04-15

申请号：US12501077

申请日：2009-07-10

申请人： Daniel S. Reed ,  Yong Lu ,  Andrew John Carter ,  Hai Li

发明人： Daniel S. Reed ,  Yong Lu ,  Andrew John Carter ,  Hai Li

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

CPC分类号： G11C13/0097 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/76

摘要： A non-volatile memory cell and associated method of use are disclosed. In accordance with various embodiments, the memory cell includes a switching device and a resistive sense element (RSE) connected in series between first and second control lines. The first control line is supplied with a variable voltage and the second control line is maintained at a fixed reference voltage. A first resistive state of the RSE is programmed by lowering the variable voltage of the first control line below the fixed reference voltage of the second control line to flow a body-drain current through the switching device. A different, second resistive state of the RSE is programmed by raising the variable voltage of the first control line above the fixed reference voltage to flow a drain-source current through the switching device.

摘要翻译： 公开了一种非易失性存储单元及其相关使用方法。 根据各种实施例，存储单元包括串联连接在第一和第二控制线之间的开关装置和电阻感测元件（RSE）。 第一控制线被提供可变电压，第二控制线保持在固定的参考电压。 RSE的第一电阻状态通过将第一控制线的可变电压降低到第二控制线的固定参考电压以下来编程，以使体电流流过开关器件。 RSE的不同的第二电阻状态通过将第一控制线的可变电压升高到固定参考电压以上而使漏源电流流过开关器件来编程。

公开(公告)号：US20100032778A1

公开(公告)日：2010-02-11

申请号：US12326186

申请日：2008-12-02

申请人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

发明人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

IPC分类号： H01L43/02 ,  G11C11/16

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

摘要翻译： 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

公开(公告)号：US20090198594A1

公开(公告)日：2009-08-06

申请号：US12025791

申请日：2008-02-05

申请人： Yong Lu ,  Trevin Chow ,  Herman John Man ,  Derek Lynn Jamison ,  Mark Wong

发明人： Yong Lu ,  Trevin Chow ,  Herman John Man ,  Derek Lynn Jamison ,  Mark Wong

IPC分类号： G06Q30/00

CPC分类号： G06Q30/0603 ,  G06Q30/0601

摘要： Aggregation of product data provided from external sources of product data for presentation on an e-commerce website. A set of product data related to a product that is offered for sale in e-commerce is accessed and subjected to an aggregation process. The set of product data is mapped for aggregation with other sets of product data based on an existing mapping or on an absence of an existing mapping. Access is provided to an aggregated set of product data that includes the set of product data that is mapped for aggregation with other sets of product data, for presentation on an e-commerce website.

摘要翻译： 从产品数据的外部来源提供的产品数据汇总在电子商务网站上进行汇总。 与在电子商务中出售的产品相关的一组产品数据被访问并进行聚合处理。 基于现有映射或缺少现有映射，将该组产品数据映射为与其他产品数据集合进行聚合。 将访问权提供给一组聚合的产品数据，其中包括一组产品数据，该产品数据映射为与其他产品数据集合进行聚合，以供在电子商务网站上呈现。

公开(公告)号：US20070039533A1

公开(公告)日：2007-02-22

申请号：US11278026

申请日：2006-03-30

申请人： Stephen Bailey ,  Lewis Madden ,  Robert Bice ,  Yong Lu

发明人： Stephen Bailey ,  Lewis Madden ,  Robert Bice ,  Yong Lu

IPC分类号： B63B1/00

CPC分类号： B63B1/121 ,  B63B43/10 ,  B63B2001/045

摘要： A vertical translation mechanism for reconfiguring the hull form of a reconfigurable vessel having independently movably side hulls and a center hull is disclosed. The vertical translation mechanism includes a hydraulic-force actuator and a nonmetallic bearing. The hydraulic force actuator comprises a rod that is disposed within a hydraulic cylinder. Responsive to changes in hydraulic pressure in the cylinder, the rod is extended or retracted therefrom. Movement of the rod controls the vertical translation of the center hull and its rotational attitude relative to the side hulls.

摘要翻译： 公开了一种用于重新配置具有独立可移动的侧壳体和中心船体的可重构船体的船体形式的垂直平移机构。 垂直平移机构包括液压力致动器和非金属轴承。 液压力致动器包括设置在液压缸内的杆。 响应于气缸中的液压变化，杆从其延伸或缩回。 杆的运动控制中心船体的垂直平移及其相对于侧船体的旋转姿态。

公开(公告)号：US20060262722A1

公开(公告)日：2006-11-23

申请号：US11484288

申请日：2006-07-10

申请人： John Chapman ,  Daniel Crocker ,  Feisal Daruwalla ,  Joanna Zang ,  Yong Lu

发明人： John Chapman ,  Daniel Crocker ,  Feisal Daruwalla ,  Joanna Zang ,  Yong Lu

IPC分类号： H04L12/26 ,  H04L12/28

CPC分类号： H04L12/2801 ,  H04N21/242

摘要： A dynamic channel change technique is disclosed which may be implemented between nodes and a Head End of an access network. Initially a network device may communicate with the Head End via a first downstream channel and a first upstream channel. When the network device receives a dynamic channel change request which includes instructions for the network device to switch to a second downstream channel, the network device may respond by switching from the first downstream channel to the second downstream channel. Thereafter, the network device may communicate with the Head End via the second downstream channel and first upstream channel. Further, according to a specific embodiment, the dynamic channel change request may also include an upstream channel change request for causing the network device to switch from a first upstream channel to a second upstream channel.

摘要翻译： 公开了可以在接入网络的节点和头端之间实现的动态信道改变技术。 最初，网络设备可以经由第一下游信道和第一上行信道与头端进行通信。 当网络设备接收到包括用于网络设备切换到第二下行信道的指令的动态信道改变请求时，网络设备可以通过从第一下游信道切换到第二下游信道来进行响应。 此后，网络设备可以经由第二下游信道和第一上行信道与头端进行通信。 此外，根据具体实施例，动态信道改变请求还可以包括用于使网络设备从第一上行信道切换到第二上行信道的上行信道改变请求。

公开(公告)号：US20050169820A1

公开(公告)日：2005-08-04

申请号：US10926831

申请日：2004-08-26

申请人： Bruce Tatarchuk ,  Bong Kyu Chang ,  Yong Lu ,  Laiyuan Chen ,  Eric Luna ,  Don Cahela

发明人： Bruce Tatarchuk ,  Bong Kyu Chang ,  Yong Lu ,  Laiyuan Chen ,  Eric Luna ,  Don Cahela

IPC分类号： B01D53/34 ,  B01D53/52 ,  B01D53/86 ,  C01B3/50 ,  C01B3/58

CPC分类号： B01D53/885 ,  B01D53/02 ,  B01D53/52 ,  B01D53/8612 ,  B01D53/864 ,  B01D2257/304 ,  B01D2257/502 ,  B01D2258/0208 ,  B01D2258/0225 ,  C01B3/508 ,  C01B3/583 ,  C01B2203/042 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/0485 ,  C01B2203/066 ,  H01M8/0668 ,  H01M8/0675

摘要： A microfibrous matrix with embedded supporting particulates/fibers and chemically reactive materials is provided as a filtration system for the removal of contaminants and other harmful agents from liquid and gaseous streams. Such filter may be used for example to protect the intolerant anodes and cathodes of fuel cells from damaging H2S while simultaneously aiding the selective conversion of CO to CO2 in fuel streams predominated by hydrogen. In general, the reactive materials utilized as well as the supporting matrix of fibers may be broadly selected to remove specific contaminants at specific reaction conditions inherent to the application. Such materials may include chemically reactive materials as high surface area carbons, zeolites, silicas, aluminas, inorganic metal oxides, polymer resins, ZnO, ZnO/Carbon, Pt/γ-Al2O3, PtCo/γ-Al2O3, ZnO/SiO2 and various other catalysts, sorbents or reactants. In an alternative embodiment, entrapped sorbents and other reactants may be used to provide a highly efficient gas and/or liquid separation and purification methodology for gas masks, building filtration systems, and/or as polishing media located downstream of traditional packed bed filtration systems so as to achieve the high volume loading/capacity of the packed bed along with the overall contacting efficiency of the outlet polishing layer.

摘要翻译： 提供具有嵌入式支撑颗粒/纤维和化学反应性材料的微纤维基质作为用于从液体和气体流中除去污染物和其它有害物质的过滤系统。 这种过滤器可以例如用于保护燃料电池的不耐受的阳极和阴极不损坏H 2 S，同时帮助CO在燃料流中的选择性转化为CO 2 以氢为主。 通常，所使用的反应性材料以及纤维的支撑基质可以被广泛地选择以除去应用固有的特定反应条件下的特定污染物。 这些材料可以包括作为高表面积碳，沸石，二氧化硅，氧化铝，无机金属氧化物，聚合物树脂，ZnO，ZnO /碳，Pt /γ-Al 2 O 3的化学反应性材料 PtCo /γ-Al 2 O 3，ZnO / SiO 2和各种其它催化剂，吸附剂或反应物。 在替代实施方案中，可以使用包埋的吸附剂和其它反应物来提供用于防毒面具，建筑物过滤系统和/或作为位于传统填充床过滤系统下游的抛光介质的高效气体和/或液体分离和纯化方法，因此 以达到填充床的高体积负荷/容量以及出口抛光层的整体接触效率。

公开(公告)号：US06920064B2

公开(公告)日：2005-07-19

申请号：US10804584

申请日：2004-03-16

申请人： Theodore Zhu ,  Yong Lu ,  Anthony Arrott

发明人： Theodore Zhu ,  Yong Lu ,  Anthony Arrott

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/15

摘要： A magneto-resistive memory comprises magneto-resistive memory cells comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.

摘要翻译： 磁阻存储器包括在自由磁性层的一侧上包括两个固定磁性层的磁阻存储器单元。 被钉扎的磁性层形成为具有反平行磁化取向，使得两层的净磁矩基本为零。 固有磁性层对自由磁性层磁化取向的影响基本上消除了，从而增加了开关行为的可预测性和增加了存储单元的写入选择性。