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    Chemical planarization of copper wafer polishing
    31.
    发明授权
    Chemical planarization of copper wafer polishing 有权
    铜晶片抛光的化学平面化

    公开(公告)号：US08586481B2

    公开(公告)日：2013-11-19

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

    Wafer edge characterization by successive radius measurements
    32.
    发明授权
    Wafer edge characterization by successive radius measurements 有权
    通过连续半径测量的晶圆边缘表征

    公开(公告)号：US08337278B2

    公开(公告)日：2012-12-25

    申请号：US12203726

    申请日：2008-09-03

    申请人： Ignasi Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

    发明人： Ignasi Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/00

    CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B49/12

    摘要： Systems and methods for performing one or more measurements of a substrate at one or more radii along the substrate are described. Thickness measurements taken at various radii along the substrate can be averaged together to obtain an average value that reflects an overall substrate thickness. A more accurate measurement of the overall substrate thickness can be obtained by performing multiple measurements and averaging the measurements together. Using the average value, polishing can be adjusted to ensure that the substrate achieves a desired planarized thickness profile.

    摘要翻译： 描述了在沿着衬底的一个或多个半径处进行衬底的一个或多个测量的系统和方法。 可以将沿着衬底的不同半径处的厚度测量值一起平均，以获得反映整个衬底厚度的平均值。 通过执行多次测量并将测量值平均化可以获得整个基板厚度的更准确的测量。 使用平均值，可以调整抛光以确保基板达到期望的平坦化厚度分布。

    Polishing system having a track
    33.
    发明授权
    Polishing system having a track 失效
    具有轨道的抛光系统

    公开(公告)号：US08172643B2

    公开(公告)日：2012-05-08

    申请号：US12420996

    申请日：2009-04-09

    申请人： Alpay Yilmaz ,  Allen L. D'Ambra ,  Jagan Rangarajan ,  Lakshmanan Karuppiah

    发明人： Alpay Yilmaz ,  Allen L. D'Ambra ,  Jagan Rangarajan ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/00 ,  B24B5/00

    CPC分类号： B24B37/04 ,  B24B41/047 ,  B24B45/003

    摘要： Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.

    摘要翻译： 本文所述的实施例涉及抛光系统中的轨道系统。 本文所述的一个实施例提供了一种配置成在抛光系统中传送抛光头的轨道系统。 轨道系统包括支撑框架，轨道，其联接到支撑框架并且限定抛光头被配置为移动的路径，以及一个或多个托架，其构造成沿着由轨道限定的路径承载至少一个抛光头， 其中所述一个或多个托架联接到所述轨道并且可以沿着所述轨道独立地移动。

    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING
    35.
    发明申请
    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
    铜波抛光的化学平面化

    公开(公告)号：US20110294293A1

    公开(公告)日：2011-12-01

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

    PROCESS SEQUENCE TO ACHIEVE GLOBAL PLANARITY USING A COMBINATION OF FIXED ABRASIVE AND HIGH SELECTIVITY SLURRY FOR PRE-METAL DIELECTRIC CMP APPLICATIONS
    36.
    发明申请
    PROCESS SEQUENCE TO ACHIEVE GLOBAL PLANARITY USING A COMBINATION OF FIXED ABRASIVE AND HIGH SELECTIVITY SLURRY FOR PRE-METAL DIELECTRIC CMP APPLICATIONS 失效
    使用固定磨料和高选择性浆液的组合实现全球平面化的前处理顺序用于预金属介电CMP应用

    公开(公告)号：US20100285666A1

    公开(公告)日：2010-11-11

    申请号：US12757767

    申请日：2010-04-09

    申请人： JIE DIAO ,  Garlen C. Leung ,  Christopher Heung-Gyun Lee ,  Lakshmanan Karuppiah

    发明人： JIE DIAO ,  Garlen C. Leung ,  Christopher Heung-Gyun Lee ,  Lakshmanan Karuppiah

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31053 ,  B24B37/042 ,  B24B37/245 ,  H01L21/76229

    摘要： A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.

    摘要翻译： 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底，在衬底上形成预金属介电层，其中所沉积的预金属介电层具有不平坦的表面形貌，并且平坦化前预处理电介质层的不平坦表面形貌， 使用化学机械抛光技术的金属介电层，其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层，以去除所述金属前介电层的主体部分并实现第一 预定的平面度，以及用非磨料抛光垫和高选择性浆料抛光预金属介电层，以去除前金属电介质的剩余部分并实现第二预定平面度。

    Determining Physical Property of Substrate
    37.
    发明申请
    Determining Physical Property of Substrate 有权
    确定基材的物理性质

    公开(公告)号：US20100261413A1

    公开(公告)日：2010-10-14

    申请号：US12822096

    申请日：2010-06-23

    申请人： Abraham Ravid ,  Boguslaw A. Swedek ,  Jeffrey Drue David ,  Jun Qian ,  Ingemar Carlsson ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Lakshmanan Karuppiah

    发明人： Abraham Ravid ,  Boguslaw A. Swedek ,  Jeffrey Drue David ,  Jun Qian ,  Ingemar Carlsson ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/02 ,  B24B49/12

    CPC分类号： G01B11/0683 ,  G01B11/0625 ,  Y10S707/99936

    摘要： A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.

    摘要翻译： 确定基板的物理性质的方法包括记录从基板获得的第一光谱，第一光谱是在改变基板的物理性质的抛光工艺期间获得的第一光谱。 该方法包括在数据库中识别与记录的第一光谱相似的几个先前记录的光谱中的至少一个。 数据库中的每个光谱具有与之相关联的物理属性值。 该方法包括产生指示物理属性的第一值与第一频谱相关联的信号，第一值使用与数据库中所识别的先前记录的频谱相关联的物理属性值来确定。 用于确定基板的物理性质的系统包括抛光机，端点确定模块和数据库。

    Method and apparatus for electroprocessing a substrate with edge profile control
    39.
    发明授权
    Method and apparatus for electroprocessing a substrate with edge profile control 失效
    用边缘轮廓控制对基底进行电处理的方法和装置

    公开(公告)号：US07422982B2

    公开(公告)日：2008-09-09

    申请号：US11483843

    申请日：2006-07-07

    申请人： You Wang ,  Jie Diao ,  Stan D. Tsai ,  Lakshmanan Karuppiah

    发明人： You Wang ,  Jie Diao ,  Stan D. Tsai ,  Lakshmanan Karuppiah

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： B23H5/08 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12

    摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

    摘要翻译： 提供了一种用于电子处理衬底的方法和装置。 在一个实施例中，用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极 施加到第一电极的偏压。 在一个实施例中，第一电极被涂覆有惰性材料，并且以这种方式获得相同的抛光速率，并且施加到第一电极的较低电位电平。