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1.发明授权Process sequence to achieve global planarity using a combination of fixed abrasive and high selectivity slurry for pre-metal dielectric CMP applications 失效使用固定研磨剂和高选择性浆料的组合来实现全金属平面度的工艺顺序用于预金属介电CMP应用公开(公告)号：US08211325B2
公开(公告)日：2012-07-03
申请号：US12757767
申请日：2010-04-09
CPC分类号： H01L21/31053 , B24B37/042 , B24B37/245 , H01L21/76229
摘要： A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.
摘要翻译： 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底，在衬底上形成预金属介电层，其中所沉积的预金属介电层具有不平坦的表面形貌，并且平坦化前预处理电介质层的不平坦表面形貌， 使用化学机械抛光技术的金属介电层，其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层，以去除所述金属前介电层的主体部分并实现第一 预定的平面度，以及用非磨料抛光垫和高选择性浆料抛光预金属介电层，以去除前金属电介质的剩余部分并实现第二预定平面度。
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2.发明申请PROCESS SEQUENCE TO ACHIEVE GLOBAL PLANARITY USING A COMBINATION OF FIXED ABRASIVE AND HIGH SELECTIVITY SLURRY FOR PRE-METAL DIELECTRIC CMP APPLICATIONS 失效使用固定磨料和高选择性浆液的组合实现全球平面化的前处理顺序用于预金属介电CMP应用公开(公告)号：US20100285666A1
公开(公告)日：2010-11-11
申请号：US12757767
申请日：2010-04-09
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , B24B37/042 , B24B37/245 , H01L21/76229
摘要： A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.
摘要翻译： 提供了一种通过化学机械抛光工艺抛光或平坦化预金属介电层的方法和设备。 该方法包括提供其上形成有特征定义的半导体衬底，在衬底上形成预金属介电层，其中所沉积的预金属介电层具有不平坦的表面形貌，并且平坦化前预处理电介质层的不平坦表面形貌， 使用化学机械抛光技术的金属介电层，其中平坦化所述不平坦表面形貌包括用固定的研磨抛光垫和第一抛光组合物抛光所述预金属介电层，以去除所述金属前介电层的主体部分并实现第一 预定的平面度，以及用非磨料抛光垫和高选择性浆料抛光预金属介电层，以去除前金属电介质的剩余部分并实现第二预定平面度。
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公开(公告)号：US08439723B2
公开(公告)日：2013-05-14
申请号：US12189641
申请日：2008-08-11
申请人： Robert A. Marks , Christopher Heung-Gyun Lee , Garlen C. Leung , Gregory E. Menk , Jie Diao , Erik S. Rondum
发明人： Robert A. Marks , Christopher Heung-Gyun Lee , Garlen C. Leung , Gregory E. Menk , Jie Diao , Erik S. Rondum
IPC分类号： B24B49/14
CPC分类号： B24B37/015
摘要： A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.
摘要翻译： 一种化学机械装置包括抛光台板，能够使抛光垫穿过压板的滚子垫组件，将衬底压靠在抛光垫上的衬底载体，以及将衬底加热到足够高的温度以提供 从衬底去除材料的速率，其补偿抛光垫的磨损。
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公开(公告)号：US20100035515A1
公开(公告)日：2010-02-11
申请号：US12189641
申请日：2008-08-11
申请人： Robert Marks , Christopher Heung-Gyun Lee , Garlen C. Leung , Gregory E. Menk , Jie Diao , Erik S. Rondum
发明人： Robert Marks , Christopher Heung-Gyun Lee , Garlen C. Leung , Gregory E. Menk , Jie Diao , Erik S. Rondum
CPC分类号： B24B37/015
摘要： A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.
摘要翻译： 一种化学机械装置包括抛光台板，能够使抛光垫穿过压板的滚子垫组件，将衬底压靠在抛光垫上的衬底载体，以及将衬底加热到足够高的温度以提供 从衬底去除材料的速率，其补偿抛光垫的磨损。
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公开(公告)号：US07063597B2
公开(公告)日：2006-06-20
申请号：US10693683
申请日：2003-10-24
申请人： Gopalakrishna B. Prabhu , Thomas H. Osterheld , Garlen C. Leung , Adam H. Zhong , Peter McReynolds , Yi-Yung Tao , Gregory E. Menk , Vasanth N. Mohan , Christopher Heung-Gyun Lee
发明人： Gopalakrishna B. Prabhu , Thomas H. Osterheld , Garlen C. Leung , Adam H. Zhong , Peter McReynolds , Yi-Yung Tao , Gregory E. Menk , Vasanth N. Mohan , Christopher Heung-Gyun Lee
IPC分类号： B24B1/00
CPC分类号： H01L21/76229 , H01L21/31053
摘要： Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.
摘要翻译： 提供的方法和组合物用于在电介质材料的抛光工艺期间使衬底表面平坦化，减少或最小的形貌缺陷形成。 在一个方面，提供一种用于使用固定磨料抛光制品作为抛光制品的至少一个加工步骤来研磨含有两个或更多个介电层的衬底的方法，例如氧化硅，氮化硅，氮氧化硅。 处理步骤可以用于去除一个或多个介电层的全部，基本上全部或一部分，其可以包括以两个或更多个步骤去除介电层的形貌，体电介质或残余电介质材料。
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公开(公告)号：US20180021918A1
公开(公告)日：2018-01-25
申请号：US15658294
申请日：2017-07-24
申请人： Andrew J. Nagengast , Christopher Heung-Gyun Lee , Thomas Li , Anand N. Iyer , Jie Diao , Huanbo Zhang , Erik S. Rondum , Wei-Cheng Lee , Jeonghoon Oh
发明人： Andrew J. Nagengast , Christopher Heung-Gyun Lee , Thomas Li , Anand N. Iyer , Jie Diao , Huanbo Zhang , Erik S. Rondum , Wei-Cheng Lee , Jeonghoon Oh
IPC分类号： B24B37/32 , H01L21/67 , H01L21/687 , H01L21/306
CPC分类号： B24B37/32 , H01L21/30625 , H01L21/67063 , H01L21/67092 , H01L21/68735
摘要： A retaining ring includes a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad, wherein the contact area is about 15-40% of a plan area of the bottom surface.
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公开(公告)号：US07086933B2
公开(公告)日：2006-08-08
申请号：US10131638
申请日：2002-04-22
申请人： Lidia Vereen , Peter N. Skarpelos , Brian J. Downum , Patrick Williams , Terry Kin-Ting Ko , Christopher Heung-Gyun Lee , Kenneth Reese Reynolds , John Hearne , Daniel Hachnochi
发明人： Lidia Vereen , Peter N. Skarpelos , Brian J. Downum , Patrick Williams , Terry Kin-Ting Ko , Christopher Heung-Gyun Lee , Kenneth Reese Reynolds , John Hearne , Daniel Hachnochi
IPC分类号： B24B1/00
摘要： A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.
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公开(公告)号：US20130189841A1
公开(公告)日：2013-07-25
申请号：US13354939
申请日：2012-01-20
申请人： Mihaela Balseanu , Li-Qun Xia , Derek R. Witty , Thomas H. Osterheld , Christopher Heung-Gyun Lee , William H. McClintock
发明人： Mihaela Balseanu , Li-Qun Xia , Derek R. Witty , Thomas H. Osterheld , Christopher Heung-Gyun Lee , William H. McClintock
IPC分类号： H01L21/306
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31053 , H01L21/823807 , H01L29/66545 , H01L29/7843
摘要： A method for forming an integrated circuit is provided. In one embodiment, the method includes forming a stop layer comprising carbon doped silicon nitride on a gate region on a substrate, the gate region having a poly gate and one or more spacers formed adjacent the poly gate, forming a dielectric layer on the stop layer, and removing a portion of the dielectric layer above the gate region using a CMP process, wherein the stop layer is a strain inducing layer having a CMP removal rate that is less than the CMP removal rate of the dielectric layer and equal to or less than the CMP removal rate of the one or more spacers.
摘要翻译： 提供一种用于形成集成电路的方法。 在一个实施例中，该方法包括在衬底上的栅极区域上形成包含碳掺杂氮化硅的阻挡层，栅极区域具有多晶硅栅极和与多晶硅栅极相邻形成的一个或多个间隔区，在阻挡层上形成电介质层 并且使用CMP工艺去除所述栅极区域上方的所述电介质层的一部分，其中所述阻挡层是具有小于所述介电层的CMP去除速率的CMP去除速率的应变诱导层，并且等于或小于 一个或多个间隔物的CMP去除速率。
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