公开(公告)号：US08787080B2

公开(公告)日：2014-07-22

申请号：US13539759

申请日：2012-07-02

申请人： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

发明人： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3459 ,  G11C29/78

摘要： A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

摘要翻译： 一种用于数据存储的方法包括在包括多个模拟存储器单元的存储器中定义擦除状态，一组未擦除的编程状态和未擦除编程状态的部分子集。 最初将数据存储在第一组模拟存储器单元中，通过将第一组中的至少一些存储单元中的每一个从擦除状态编程为从非擦除编程状态集合中选择的各自的非擦除编程状态 。 在最初存储数据之后，编程可能对第一组产生干扰的第二组模拟存储器单元。 在对第二组进行编程之后，通过重复仅对其各自编程状态属于部分子集的第一组中的存储器单元进行编程，对该第一组进行有选择地重新编程。

公开(公告)号：US08773904B2

公开(公告)日：2014-07-08

申请号：US13595571

申请日：2012-08-27

申请人： Micha Anholt ,  Naftali Sommer

发明人： Micha Anholt ,  Naftali Sommer

IPC分类号： G11C16/04

CPC分类号： G11C16/3418 ,  G11C11/5642 ,  G11C29/021 ,  G11C29/028

摘要： A method includes storing data in a group of analog memory cells. The memory cells in the group are read using first read thresholds to produce first readout results, and re-read using second read thresholds to produce second readout results. Third read thresholds, which include at least one of the first read thresholds and at least one of the second read thresholds, are defined. Readout performance of the first, second and third read thresholds is evaluated based on the first and second readout results. The first, second or third read thresholds are selected based on the evaluated readout performance, and data recovery is performed using the selected read thresholds.

摘要翻译： 一种方法包括将数据存储在一组模拟存储器单元中。 使用第一读取阈值读取组中的存储器单元以产生第一读出结果，并且使用第二读取阈值重新读取以产生第二读出结果。 定义包括第一读取阈值和至少一个第二读取阈值中的至少一个的第三读取阈值。 基于第一和第二读出结果评估第一，第二和第三读取阈值的读出性能。 基于评估的读出性能选择第一，第二或第三读取阈值，并且使用所选择的读取阈值来执行数据恢复。

公开(公告)号：US08769381B2

公开(公告)日：2014-07-01

申请号：US13523352

申请日：2012-06-14

申请人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

发明人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

IPC分类号： H03M13/00 ,  G08C25/02 ,  H04L1/18 ,  G06F11/10 ,  H03M13/37

CPC分类号： G06F11/10 ,  G06F11/1008 ,  G06F11/1068 ,  G11C2029/0411 ,  H03M13/00 ,  H03M13/3761

摘要： A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

公开(公告)号：US08599611B2

公开(公告)日：2013-12-03

申请号：US13239408

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US08527819B2

公开(公告)日：2013-09-03

申请号：US12677114

申请日：2008-10-12

申请人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

发明人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

IPC分类号： G11C29/00

CPC分类号： G11C16/344 ,  G11C16/04 ,  G11C16/345 ,  G11C29/52

摘要： A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

摘要翻译： 一种用于数据存储的方法包括对一组模拟存储器单元（32）执行擦除操作。 组中的一个或多个存储器单元，其在擦除操作中失败，被识别为擦除故障单元。 用于对组中的模拟存储器单元进行编程的存储配置响应于所识别的擦除故障单元被修改。 使用修改的存储配置将数据存储在模拟存储器单元的组中。

公开(公告)号：US08495465B1

公开(公告)日：2013-07-23

申请号：US12890724

申请日：2010-09-27

申请人： Micha Anholt ,  Or Ordentlich ,  Naftali Sommer ,  Ofir Shalvi

发明人： Micha Anholt ,  Or Ordentlich ,  Naftali Sommer ,  Ofir Shalvi

IPC分类号： G11C29/00

CPC分类号： H03M13/29 ,  G06F11/1012 ,  G11C29/00 ,  G11C2029/1804

摘要： A method for data storage includes encoding each of multiple data items individually using a first Error Correction Code (ECC) to produce respective encoded data items. The encoded data items are stored in a memory. The multiple data items are encoded jointly using a second ECC, so as to produce a code word of the second ECC, and only a part of the code word is stored in the memory. The stored encoded data items are recalled from the memory and the first ECC is decoded in order to reconstruct the data items. Upon a failure to reconstruct a given data item from a respective given encoded data item by decoding the first ECC, the given data item is reconstructed based on the part of the code word of the second ECC and on the encoded data items other than the given encoded data item.

公开(公告)号：US20120201078A1

公开(公告)日：2012-08-09

申请号：US13449326

申请日：2012-04-18

申请人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

发明人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

IPC分类号： G11C16/10

CPC分类号： G06F11/1068 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C27/005 ,  G11C2211/5641

摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

公开(公告)号：US08234545B2

公开(公告)日：2012-07-31

申请号：US12119069

申请日：2008-05-12

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

IPC分类号： G06F11/00

CPC分类号： G06F11/1068 ,  G11C2029/0411

摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

摘要翻译： 一种用于操作存储器的方法包括用错误校正码（ECC）对输入数据进行编码以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级 级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

公开(公告)号：US08225181B2

公开(公告)日：2012-07-17

申请号：US12323544

申请日：2008-11-26

申请人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

发明人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

IPC分类号： G11C29/00 ,  G08C25/02 ,  H04L1/18 ,  H03M13/00

CPC分类号： G06F11/10 ,  G06F11/1008 ,  G06F11/1068 ,  G11C2029/0411 ,  H03M13/00 ,  H03M13/3761

摘要： A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

摘要翻译： 一种用于数据存储的方法包括通过将相应的第一存储值写入组中的存储器单元来将经错误校正码（ECC）编码的数据存储在一组模拟存储器单元中。 在存储数据之后，从组中的存储器单元读取相应的第二存储值，并且处理读取的第二存储值以便对ECC进行解码。 响应于对ECC的解码失败，可​​能导致故障的一个或多个第二存储值被识别为可疑存储值。 从包含存储可疑存储值的存储单元的存储器单元的子集重新读取相应的第三存储值。 使用第三存储值对ECC进行重新解码，以重建存储的数据。

公开(公告)号：US08156403B2

公开(公告)日：2012-04-10

申请号：US11996054

申请日：2007-05-10

申请人： Ofir Shalvi ,  Naftali Sommer ,  Ariel Maislos ,  Dotan Sokolov

发明人： Ofir Shalvi ,  Naftali Sommer ,  Ariel Maislos ,  Dotan Sokolov

IPC分类号： G11C29/00

CPC分类号： G06F11/1072

摘要： A method for operating a memory device (24) includes encoding data using an Error Correction Code (ECC) and storing the encoded data as first analog values in respective analog memory cells (32) of the memory device. After storing the encoded data, second analog values are read from the respective memory cells of the memory device in which the encoded data were stored. At least some of the second analog values differ from the respective first analog values. A distortion that is present in the second analog values is estimated. Error correction metrics are computed with respect to the second analog values responsively to the estimated distortion. The second analog values are processed using the error correction metrics in an ECC decoding process, so as to reconstruct the data.

摘要翻译： 一种用于操作存储器件（24）的方法包括使用纠错码（ECC）对数据进行编码，并将编码数据作为第一模拟值存储在存储器件的相应模拟存储单元（32）中。 在存储编码数据之后，从其中存储有编码数据的存储器件的相应存储单元读取第二模拟值。 至少一些第二模拟值与各自的第一模拟值不同。 估计存在于第二模拟值中的失真。 响应于估计的失真，相对于第二模拟值计算误差校正度量。 使用ECC解码处理中的纠错度量来处理第二模拟值，以重构数据。