公开(公告)号：US07075031B2

公开(公告)日：2006-07-11

申请号：US10399981

申请日：2001-10-24

Applicant: Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

IPC: B23K9/00

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Abstract translation: 一种用于控制电极（4）的温度的方法和结构。 在蚀刻第一晶片之前对电极进行加热，并保持硅电极的（时间上）固定和（空间上）均匀的温度。 电阻式加热器元件（1）嵌入电极（3）的外壳内或形成电极的一部分。 电阻加热器元件形成多区类型的加热器，以使温度不均匀化最小化。 电阻加热器元件被分成多个区域，其中可以单独地调节每个区域的功率，从而实现电极所需的温度均匀性。 将电极预热到适当的工作温度，消除半导体晶片的“第一晶片效应”和非均匀蚀刻。

公开(公告)号：US06806653B2

公开(公告)日：2004-10-19

申请号：US10355203

申请日：2003-01-31

Applicant: Eric J. Strang ,  Andrej S. Mitrovic

Inventor： Eric J. Strang ,  Andrej S. Mitrovic

IPC: H01J724

CPC classification number: H01J37/32174 ,  H01J37/32082

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract translation: 一种用于等离子体处理系统的电极组件，其包括适于耦合到RF能量源的基极电极，可移除地耦合到所述基极电极的可移除电极以及插入所述基极电极的表面和 可拆卸电极。

公开(公告)号：US08562743B2

公开(公告)日：2013-10-22

申请号：US13098991

申请日：2011-05-02

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C18/00 ,  C23C18/1619 ,  C23C18/1658 ,  C23C18/1678 ,  C23C18/1685 ,  C23C18/40

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Abstract translation: 一种高压处理系统，包括被构造成容纳基板的室。 流体引入系统包括配置成供应第一组合物和第二组合物的至少一种组合物供应系统，以及配置成供应流体的至少一个流体供应系统。 流体供应系统被配置为交替地和不连续地将第一组合物和第二组合物引入流体内的室。

公开(公告)号：US20120067866A1

公开(公告)日：2012-03-22

申请号：US13307176

申请日：2011-11-30

Applicant: Steven T. FINK ,  Eric J. Strang

Inventor： Steven T. FINK ,  Eric J. Strang

IPC: H05B3/02 ,  F25B21/02

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08092602B2

公开(公告)日：2012-01-10

申请号：US11961355

申请日：2007-12-20

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: C23C16/00 ,  C23C16/46

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08050900B2

公开(公告)日：2011-11-01

申请号：US10673583

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型执行第一原理模拟，以提供与由半导体处理工具执行的处理相关的虚拟传感器测量，并且虚拟传感器测量用于促进由半导体处理工具执行的处理。

公开(公告)号：US08014991B2

公开(公告)日：2011-09-06

申请号：US10673501

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟，以提供由半导体处理工具执行的处理的仿真结果，并且将模拟结果用作表征由半导体处理执行的处理的数据集的一部分 工具。

公开(公告)号：US20100193471A1

公开(公告)日：2010-08-05

申请号：US12754662

申请日：2010-04-06

Applicant: Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: C23F1/00 ,  C23C16/52

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07718030B2

公开(公告)日：2010-05-18

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07563328B2

公开(公告)日：2009-07-21

申请号：US10466107

申请日：2002-01-22

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/08 ,  C23C16/44

CPC classification number: H01J37/3244 ,  C23C16/4402 ,  C23C16/455 ,  H01J2237/022

Abstract: A gas injection system (10) is provided for a processing reactor and a method is provided for reducing transport of particulate material onto a substrate (12) during process gas start-up. The system (10) includes a two-way valve (40) having an inlet (42) connected to a mass flow controller (30), and first and second outlets (44, 46). The system (10) includes a principle gas feed line (50) connecting the first outlet (44) of the valve (40) to an inject plate (24) within a vacuum chamber (20) at a position above a substrate (12), and a start-up line (60) connecting the second outlet (46) to an orifice (62) in the chamber (20) at a position not above the substrate (12). Alternatively, the system includes a valve having an inlet connected to the mass flow controller, and a first outlet. In the alternative system, a first gas feed line connects the first outlet of the valve to the inject plate (24), and an acoustical dampening device is provided within the first gas feed line.

Abstract translation: 提供了一种用于处理反应器的气体注入系统（10），并且提供了一种用于在处理气体启动期间减少颗粒材料在基底（12）上的输送的方法。 系统（10）包括具有连接到质量流量控制器（30）的入口（42）和第一和第二出口（44,46）的二通阀（40）。 系统（10）包括在基板（12）上方的位置处将真空室（20）内的阀（40）的第一出口（44）与喷射板（24）连接的主要气体供给管线（50） 以及在不在基板（12）上方的位置处将第二出口（46）连接到腔室（20）中的孔口（62）的启动线（60）。 或者，该系统包括具有连接到质量流量控制器的入口的阀和第一出口。 在替代系统中，第一气体供给管路将阀的第一出口连接到喷射板（24），并且在第一气体供给管线内设置有声阻尼装置。