Thermally zoned substrate holder assembly
    1.
    发明授权
    Thermally zoned substrate holder assembly 有权
    热分区衬底支架组件

    公开(公告)号:US08927907B2

    公开(公告)日:2015-01-06

    申请号:US13307176

    申请日:2011-11-30

    CPC classification number: H01L21/67103 Y10T279/23

    Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    Abstract translation: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如,气体或真空填充的室)更低的导热系数的绝缘材料制成。

    Method and apparatus for an improved focus ring in a plasma processing system
    2.
    发明授权
    Method and apparatus for an improved focus ring in a plasma processing system 失效
    用于等离子体处理系统中改进的聚焦环的方法和装置

    公开(公告)号:US07582186B2

    公开(公告)日:2009-09-01

    申请号:US10739127

    申请日:2003-12-19

    CPC classification number: H01L21/67069 H01J37/32642 H01L21/68735

    Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

    Abstract translation: 被配置为联接到衬底保持器的聚焦环包括暴露于过程的第一表面; 与所述第一表面相对的第二表面,用于联接到所述衬底保持器的上表面; 用于面对衬底的周边的内部径向边缘; 和外部径向边缘。 第二表面还包括一​​个或多个接触特征,每个接触特征被配置为与形成在衬底保持器的上表面内的一个或多个接收特征配合。 聚焦环还可以包括用于将聚焦环机械地夹持到基板保持器的夹紧特征。 此外,可以将气体供应到驻留在聚焦环上的一个或多个接触特征与衬底保持器上的一个或多个接收特征之间的接触空间。

    Thermally zoned substrate holder assembly
    3.
    发明授权
    Thermally zoned substrate holder assembly 有权
    热分区衬底支架组件

    公开(公告)号:US07347901B2

    公开(公告)日:2008-03-25

    申请号:US10721500

    申请日:2003-11-26

    CPC classification number: H01L21/67103 Y10T279/23

    Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).

    Abstract translation: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如气体或真空填充室)更低的导热系数的绝缘材料制成。

    Method and apparatus for tuning a plasma reactor chamber
    4.
    发明授权
    Method and apparatus for tuning a plasma reactor chamber 有权
    调整等离子体反应室的方法和装置

    公开(公告)号:US06960887B2

    公开(公告)日:2005-11-01

    申请号:US10359556

    申请日:2003-02-07

    CPC classification number: H01J37/32449 H01J37/32623 H01J37/32834

    Abstract: A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.

    Abstract translation: 等离子体反应器或真空处理装置设置有孔板组件。 孔板组件包括上板和下板。 每个板配置有通孔。 上下孔板可独立地相对于彼此旋转。 板在真空室内布置有排放反应器,使得卡盘组件设置在孔板组件的开口内。 孔板组件进一步构造成具有与真空室的内壁形状基本匹配的周边形状。

    THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY
    5.
    发明申请
    THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY 审中-公开
    热隔离的基座支架组件

    公开(公告)号:US20120067866A1

    公开(公告)日:2012-03-22

    申请号:US13307176

    申请日:2011-11-30

    CPC classification number: H01L21/67103 Y10T279/23

    Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    Abstract translation: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如,气体或真空填充的室)更低的导热系数的绝缘材料制成。

    Thermally zoned substrate holder assembly
    6.
    发明授权
    Thermally zoned substrate holder assembly 有权
    热分区衬底支架组件

    公开(公告)号:US08092602B2

    公开(公告)日:2012-01-10

    申请号:US11961355

    申请日:2007-12-20

    CPC classification number: H01L21/67103 Y10T279/23

    Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    Abstract translation: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如,气体或真空填充的室)更低的导热系数的绝缘材料制成。

    Plasma processing apparatus for spatial control of dissociation and ionization
    7.
    发明授权
    Plasma processing apparatus for spatial control of dissociation and ionization 失效
    用于解离和电离的空间控制的等离子体处理装置

    公开(公告)号:US06887341B2

    公开(公告)日:2005-05-03

    申请号:US10291754

    申请日:2002-11-12

    CPC classification number: H01J37/321 H01J37/32623 H01J37/32633

    Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

    Abstract translation: 用于解离和电离的空间控制的等离子体处理装置和用于控制等离子体中的离解和离子化的方法。 本发明的一个方面提供了一种用于解离和电离的空间控制的等离子体处理装置,包括处理室,等离子体生成系统,其配置和布置成在处理室中产生等离子体;衬底保持器,其构造成在衬底处理期间保持衬底 构造成将气体引入处理室的气源,用于保持处理室内的选定压力的压力控制系统,以及将处理室的内部容积分成一个或多个空间区域的多个隔板。 这些隔板从处理室的壁朝向所述衬底保持器延伸。

    Thermally zoned substrate holder assembly

    公开(公告)号:US07850782B2

    公开(公告)日:2010-12-14

    申请号:US11961355

    申请日:2007-12-20

    Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    Dry non-plasma treatment system and method of using
    9.
    发明授权
    Dry non-plasma treatment system and method of using 有权
    干式非等离子体处理系统及其使用方法

    公开(公告)号:US07718032B2

    公开(公告)日:2010-05-18

    申请号:US11425883

    申请日:2006-06-22

    Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

    Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理,其中每个基底在包括表面温度和气体压力的受控条件下暴露于包括HF和任选的NH 3的气态化学物质。 此外,处理系统被配置为提供每个基板的热处理,其中每个基板被热处理以去除每个基板上的经化学处理的表面。

    Directed gas injection apparatus for semiconductor processing
    10.
    发明授权
    Directed gas injection apparatus for semiconductor processing 有权
    用于半导体加工的定向气体注入装置

    公开(公告)号:US07217336B2

    公开(公告)日:2007-05-15

    申请号:US10482210

    申请日:2002-06-20

    Applicant: Eric J. Strang

    Inventor: Eric J. Strang

    Abstract: A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.

    Abstract translation: 一种用于在气体注入系统(20)中利用成形孔(例如,声音和简单孔和发散喷嘴)作为等离子体处理系统的一部分的方法和系统(1)。 通过利用成形孔,可以提高气流(25)的方向性。 这种改进在高纵横比处理中特别有益。

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