公开(公告)号：US06340734B1

公开(公告)日：2002-01-22

申请号：US09454563

申请日：1999-12-07

申请人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

发明人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

IPC分类号： C08G7706

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/128

摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

摘要翻译： 通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。 新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。 或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。 光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。 光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。 光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

公开(公告)号：US06821718B2

公开(公告)日：2004-11-23

申请号：US10657168

申请日：2003-09-09

申请人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

发明人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

IPC分类号： G03C500

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106

摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

摘要翻译： 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。

公开(公告)号：US6087064A

公开(公告)日：2000-07-11

申请号：US146867

申请日：1998-09-03

申请人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

发明人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/004 ,  G03F7/075 ,  G03C1/725

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/128

摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

摘要翻译： 通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。 新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。 或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。 光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。 光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。 光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

公开(公告)号：US06653045B2

公开(公告)日：2003-11-25

申请号：US09785609

申请日：2001-02-16

申请人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

发明人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

IPC分类号： G03F7004

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106

摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

摘要翻译： 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。

公开(公告)号：US07902323B1

公开(公告)日：2011-03-08

申请号：US09346353

申请日：1999-07-02

申请人： Marie Angelopoulos ,  Yun-Hsin Liao ,  Ravi F. Saraf

发明人： Marie Angelopoulos ,  Yun-Hsin Liao ,  Ravi F. Saraf

IPC分类号： C08J3/11 ,  C08J3/18 ,  C08G73/00 ,  H01B1/12

CPC分类号： H01B1/128 ,  C08G61/12

摘要： Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.

摘要翻译： 描述了形成具有高结晶度的导电聚合物和导电聚合物前体的材料的方法。 通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。 在导电材料中实现高水平的导电性而不使材料拉伸定向。 与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。 在优选的实施方案中，将添加剂加入到含有溶剂和前体或导电聚合物的溶液中。 添加剂优选稀释剂的增塑剂。 当除去溶剂时，与没有添加剂相比，材料干燥并含有更高的结晶度。

公开(公告)号：US20060127800A1

公开(公告)日：2006-06-15

申请号：US10537259

申请日：2002-12-05

申请人： Wu-Song Huang ,  Wenjie Li ,  Wayne Moreau ,  David Medeiros ,  Karen Petrillo ,  Robert Lang ,  Marie Angelopoulos

发明人： Wu-Song Huang ,  Wenjie Li ,  Wayne Moreau ,  David Medeiros ,  Karen Petrillo ,  Robert Lang ,  Marie Angelopoulos

IPC分类号： G03C1/76

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

摘要翻译： 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

公开(公告)号：US20060058489A1

公开(公告)日：2006-03-16

申请号：US11263430

申请日：2005-10-31

申请人： Marie Angelopoulos ,  Wu-Song Huang ,  Arpan Mahorowila ,  Wayne Moreau ,  Dirk Pfeiffer ,  Ratnam Sooriyekumaren

发明人： Marie Angelopoulos ,  Wu-Song Huang ,  Arpan Mahorowila ,  Wayne Moreau ,  Dirk Pfeiffer ,  Ratnam Sooriyekumaren

IPC分类号： C08G77/26

CPC分类号： G03F7/0754 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/115

摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

摘要翻译： 特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

公开(公告)号：US06746770B1

公开(公告)日：2004-06-08

申请号：US08476141

申请日：1995-06-07

申请人： Ali Afzali-Ardakani ,  Marie Angelopoulos ,  Jack Alvin Dickerson ,  Thomas Baird Pillsbury ,  Karl Joseph Puttlitz ,  Jane Margaret Shaw ,  Jeffrey Donald Gelorme

发明人： Ali Afzali-Ardakani ,  Marie Angelopoulos ,  Jack Alvin Dickerson ,  Thomas Baird Pillsbury ,  Karl Joseph Puttlitz ,  Jane Margaret Shaw ,  Jeffrey Donald Gelorme

IPC分类号： B32B904

CPC分类号： H05K9/0096 ,  C08G61/12 ,  H01B1/125 ,  H01J29/868 ,  H01L23/49894 ,  H01L23/60 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31504 ,  Y10T428/31511 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31797 ,  Y10T428/31855 ,  Y10T428/31909 ,  Y10T428/31924 ,  Y10T428/31931 ,  H01L2924/00

摘要： Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching. The compositions can be admixtures of abrasion resistant silicones, polysiloxanes, acrylates, epoxies, methacrylates, epoxyacrylates, epoxymethacrylates, styrenes and electrically conductive polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenevinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophenes, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The compositions can be a layer or an electrically conductive polymer with an abrasion resistant layer thereover.

摘要翻译： 描述了导电和耐磨聚合物组合物，其制造方法及其用途。 形成耐磨材料和导电聚合材料的外加剂。 这些混合物中的许多都是透光的，可以用作耐磨光透射静电放电层。 透光放电层可用作诸如CRT屏幕的视觉显示器的表面涂层，以避免灰尘和划痕的静电积累。 组合物可以是耐磨硅氧烷，聚硅氧烷，丙烯酸酯，环氧树脂，甲基丙烯酸酯，环氧丙烯酸酯，环氧甲基丙烯酸酯，苯乙烯和选自取代和未取代的聚苯胺的聚合物，聚对亚苯基乙烯基，取代和未取代的聚噻吩的取代和未取代的聚对 - 取代和未取代的聚吡咯，取代和未取代的聚硒吩，可溶性前体形成的聚乙酰胺，其组合以及与其它聚合物的共混物。 组合物可以是其上具有耐磨层的层或导电聚合物。

公开(公告)号：US06420088B1

公开(公告)日：2002-07-16

申请号：US09602967

申请日：2000-06-23

申请人： Marie Angelopoulos ,  Ari Aviram ,  C. Richard Guarnieri ,  Wu-Song Huang ,  Ranee Kwong ,  Wayne M. Moreau

发明人： Marie Angelopoulos ,  Ari Aviram ,  C. Richard Guarnieri ,  Wu-Song Huang ,  Ranee Kwong ,  Wayne M. Moreau

IPC分类号： G03C1825

CPC分类号： C08G77/20 ,  C08G77/38 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

摘要翻译： 特征在于存在具有侧生发色团部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

公开(公告)号：US06210606B1

公开(公告)日：2001-04-03

申请号：US09268527

申请日：1999-03-12

申请人： Marie Angelopoulos ,  Yun-Hsin Liao ,  Ravi F. Saraf

发明人： Marie Angelopoulos ,  Yun-Hsin Liao ,  Ravi F. Saraf

IPC分类号： H01B112

CPC分类号： C08G61/12 ,  H01B1/128 ,  Y10T428/249958

摘要： Polycrystalline materials containing crystallites of precursors to electrically conductive polymers and electrically conductive polymers are described which have an adjustable high degree of crystallinity. The intersticial regions between the crystallites contains amorphous material containing precursors to electrically conductive polymers and/or electrically conductive polymers. The degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. This is preferable achieved by including additives, such as plasticizers and diluents, to the solution from which the polycrystalline material is formed. The morphology of the polycrystalline material is adjustable to modify the properties of the material such as the degree of crystallinity, crystal grain size, glass transition temperature, thermal coefficient of expansion and degree of electrical conductivity. High levels of electrical conductivity are achieved in the electrically conductive polycrystalline materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity.

摘要翻译： 描述了具有可调高结晶度的导电聚合物和导电聚合物的前体微晶的多晶材料。 微晶之间的区域包含含有导电聚合物和/或导电聚合物的前体的无定形材料。 通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现结晶度。 优选通过将诸如增塑剂和稀释剂的添加剂添加到形成多晶材料的溶液中来实现。 可以调节多晶材料的形态，以改变材料的性质，例如结晶度，晶粒尺寸，玻璃化转变温度，热膨胀系数和电导率。 在导电多晶材料中实现高水平的导电性而不使材料拉伸取向。 与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。