公开(公告)号：US20110052957A1

公开(公告)日：2011-03-03

申请号：US12990534

申请日：2009-03-31

申请人： Hiroshi Ohta

发明人： Hiroshi Ohta

IPC分类号： H01M2/10

CPC分类号： H01M2/1077 ,  H01M2/1083

摘要： In a cell holding device, engaging members (224) are disposed in an insertion cavity (222) into which an end portion of each cell (400) is inserted, such that the engaging members (224) are movable in a direction of insertion in which the cell (400) is inserted. The cell holding device also has guides (225) that push the engaging members (224) toward the inner radius of the insertion cavity (222) as the engaging members (224) move in the direction of insertion. With this arrangement, when the end portion of the cell (400) is inserted into the insertion cavity (222), the engaging members (224) sandwiched between the guides (225) and a side circumferential surface (403) of the cell (400) hold the end portion of the cell (400).

摘要翻译： 在电池保持装置中，接合构件（224）设置在每个电池单元（400）的端部插入到其中的插入腔（222）中，使得接合构件（224）可以在插入方向上移动 其中单元（400）被插入。 电池保持装置还具有当接合构件（224）沿插入方向移动时将接合构件（224）朝向插入腔（222）的内半径推动的引导件（225）。 利用这种结构，当电池（400）的端部插入到插入腔（222）中时，夹在引导件（225）和电池（400）的侧周面（403）之间的接合构件（224） ）保持电池单元（400）的端部。

公开(公告)号：US20090316246A1

公开(公告)日：2009-12-24

申请号：US12307057

申请日：2007-05-31

申请人： Osamu Asai ,  Eiichi Yajima ,  Hiroshi Ohta

发明人： Osamu Asai ,  Eiichi Yajima ,  Hiroshi Ohta

IPC分类号： G02F1/23 ,  C08F2/48 ,  B44C1/22

CPC分类号： G02B1/10 ,  B29D11/0073 ,  C09K9/02 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1033 ,  C09K2211/1088 ,  G02B1/11 ,  G02B1/14 ,  G02B5/23

摘要： The present invention relates to a photochromic film comprising a photochromic dye and a resin component. The photochromic film has a nanoindentation hardness of equal to or greater than 800 nm on at least one of surfaces, surface A, thereof. The present invention further relates to a method of manufacturing a photochromic lens. The method of manufacturing a photochromic lens of the present invention comprises forming a photochromic film having a nanoindentation hardness ranging from 500 to 5000 nm on an outermost surface thereof as well as having a smaller nanoindentation hardness on a surface facing a first mold than that on the outermost surface by coating a photochromic liquid comprising a photochromic dye and a curable component on one surface of the first mold for formation of one of surfaces of a lens and subjecting the photochromic liquid to curing treatment, and a photochromic lens comprising a photochromic film on a lens substrate is obtained by means of the above first mold.

摘要翻译： 本发明涉及包含光致变色染料和树脂成分的光致变色膜。 该光致变色膜在其至少一个表面A上具有等于或大于800nm的纳米压痕硬度。 本发明还涉及一种制造光致变色透镜的方法。 制造本发明的光致变色透镜的方法包括在其最外表面上形成具有500-5000nm的纳米压痕硬度的光致变色膜，并且在面向第一模具的表面上具有比在第一模具上的纳米压痕硬度小 通过在第一模具的一个表面上涂布包含光致变色染料和可固化组分的光致变色液体，以形成透镜表面之一并使该光致变色液体进行固化处理，以及包含光致变色膜的光致变色透镜 透镜基板通过上述第一模具获得。

公开(公告)号：US07622771B2

公开(公告)日：2009-11-24

申请号：US12123072

申请日：2008-05-19

申请人： Syotaro Ono ,  Wataru Saito ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Wataru Sekine

发明人： Syotaro Ono ,  Wataru Saito ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Wataru Sekine

IPC分类号： H01L31/119 ,  H01L21/336

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on the major surface and being adjacent to the second semiconductor layer, a termination semiconductor layer provided on the major surface of the first semiconductor layer in a termination region outside the device region, a channel stop layer, and a channel stop electrode. The channel stop layer is provided in contact with the termination semiconductor layer on the major surface of the first semiconductor layer in an outermost peripheral portion outside the termination semiconductor layer and has a higher impurity concentration than the termination semiconductor layer. The channel stop electrode is provided on at least part of a surface of the channel stop layer and projects toward the termination semiconductor layer beyond at least a superficial portion of the channel stop layer.

摘要翻译： 半导体装置包括第一半导体层，设置在第一半导体层的主表面上的第二半导体层，设置在主表面上并与第二半导体层相邻的第三半导体层，设置在主体上的端接半导体层 在器件区域外的终端区域中的第一半导体层的表面，沟道阻挡层和沟道停止电极。 沟道阻挡层设置成与终端半导体层外部的最外周部分中的第一半导体层的主表面上的端接半导体层接触，并且具有比端接半导体层更高的杂质浓度。 通道阻挡电极设置在通道阻挡层的表面的至少一部分上，并且朝向端子半导体层突出超过通道阻挡层的至少表面部分。

公开(公告)号：US20090123302A1

公开(公告)日：2009-05-14

申请号：US12348942

申请日：2009-01-06

申请人： Hitoshi Nishimura ,  Tomoo Suzuki ,  Hiroshi Ohta

发明人： Hitoshi Nishimura ,  Tomoo Suzuki ,  Hiroshi Ohta

IPC分类号： F04C29/04 ,  F04C2/24

CPC分类号： F04C18/16 ,  F01C21/007 ,  F04C23/00 ,  F04C23/001 ,  F04C29/005 ,  F04C29/04

摘要： A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.

摘要翻译： 一种螺杆压缩机，包括：低压级压缩机体; 高压级压缩机主体，其进一步压缩由所述低压级压缩机主体压缩的压缩空气; 小齿轮分别设置在例如低压级压缩机主体的公转子和例如高压级压缩机主体的公转子上; 电机 大齿轮例如设置在马达的旋转轴上; 以及可旋转地支撑并设有与大齿轮啮合的小齿轮的中间轴和与小齿轮啮合的大齿轮。 由此，可以使电动机的转速相对较低，同时抑制齿轮的直径增大，能够实现成本的降低。

公开(公告)号：US20080246079A1

公开(公告)日：2008-10-09

申请号：US12050415

申请日：2008-03-18

申请人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yauto Sumi ,  Masaru Izumisawa ,  Wataru Sekine ,  Hiroshi Ohta ,  Shoichiro Kurushima

发明人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yauto Sumi ,  Masaru Izumisawa ,  Wataru Sekine ,  Hiroshi Ohta ,  Shoichiro Kurushima

IPC分类号： H01L29/00

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers. Sum of the amount of impurities in the second semiconductor layer and the amount of impurities in the third semiconductor layer at an end on the second main electrode side of the second semiconductor layer and the third semiconductor layer is smaller than the sum at a center of the second semiconductor layer and the third semiconductor layer in the direction from the first main electrode to the second main electrode.

摘要翻译： 功率半导体器件包括：第一半导体层; 第二半导体层和第三半导体层，设置在所述第一半导体层的上部并且交替地平行于所述第一半导体层的上表面布置; 设置在所述第三半导体层上的多个第四半导体层; 选择性地形成在每个第四半导体层的上表面中的第五半导体层; 控制电极; 栅极绝缘膜; 设置在所述第一半导体层的下表面上的第一主电极; 以及设置在第四和第五半导体层上的第二主电极。 第二半导体层中的杂质量和第二半导体层的第二主电极侧端部的第三半导体层中的杂质量的和小于第二半导体层的第二主电极侧的和 第二半导体层和第三半导体层在从第一主电极到第二主电极的方向上。

公开(公告)号：US20080108504A1

公开(公告)日：2008-05-08

申请号：US11765741

申请日：2007-06-20

申请人： Toshiaki Matsui ,  Hiroshi Ohta

发明人： Toshiaki Matsui ,  Hiroshi Ohta

IPC分类号： G01R33/035

CPC分类号： G01R33/0354 ,  A61B5/04008 ,  Y10S505/846

摘要： Disclosed is a measuring structure for a magneto encephalographic equipment superconducting magnetic-shield comprising a vacuum-tight body comprising an outer enclosure wall, a first inner enclosure wall inserted in the outer enclosure wall to define an upper closed space, and a second inner enclosure wall to define a lower open space. The first and second inner enclosure walls are arranged with the bottom of the first inner enclosure wall facing the ceiling of the second inner enclosure wall. A first enclosure of high critical temperature superconductor and a second enclosure of high permeability material are concentrically arranged in the annular vacuum space defined between the first and second inner enclosure walls and the outer enclosure wall. A head-accommodating area is delimited by the hollow partition between the bottom of the first inner enclosure wall and the ceiling of the second inner enclosure wall both facing each other, and a plurality of SQUID sensors are arranged in the upper closed space, encircling the head-accommodating area. The SQUID sensors are cooled by the liquid helium contained in the upper closed space whereas the first enclosure is cooled by the circulating helium gas from a closed-cycle helium refrigerator. An adiabatic expansion compartment may be placed in the upper closed space. The adiabatic expansion compartment is supplied with cooled helium gas, which is converted into liquid helium by adiabatic expansion, and the so converted liquid helium is led into the liquid helium bath in the form of drops to make up for the consumption of liquid helium during operation. Otherwise, the adiabatic expansion compartment is connected to the SQUID magnetic sensors to indirectly cool the sensors by the thermal conduction body.

摘要翻译： 本发明公开了一种用于磁脑科设备超导磁屏蔽的测量结构，其包括真空密封体，该真空密封体包括外壳壁，插入外壳壁中以限定上封闭空间的第一内围壁和第二内围壁 定义较低的开放空间。 第一和第二内围壁布置成使得第一内围壁的底部面向第二内围壁的天花板。 高临界温度超导体的第一外壳和高导磁率材料的第二外壳同心地布置在限定在第一和第二内部外壳壁和外部外壳壁之间的环形真空空间中。 头部容纳区域由第一内壳体壁的底部和第二内壳体壁的彼此面对的顶板之间的中空分隔部限定，并且多个SQUID传感器布置在上封闭空间中，环绕 头部容纳区域。 SQUID传感器由包含在上部封闭空间中的液氦冷却，而第一个外壳由来自闭合循环氦制冷机的循环氦气冷却。 绝热膨胀室可以放置在上封闭空间中。 绝热膨胀室供应冷却氦气，通过绝热膨胀将其转化为液氦，将这样转化的液氦以液滴形式引入液氦浴中，以弥补在运行过程中液氦的消耗 。 否则，绝热膨胀室连接到SQUID磁传感器，以通过导热体间接冷却传感器。

公开(公告)号：US20070272977A1

公开(公告)日：2007-11-29

申请号：US11680912

申请日：2007-03-01

申请人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta

发明人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66712 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof.

摘要翻译： 功率半导体器件包括：第一导电类型的第一半导体层; 第一导电类型的第二半导体层和形成在第一半导体层上的第二导电类型的第三半导体层，并且沿着平行于第一半导体层的表面的至少一个方向交替布置; 第一主电极; 选择性地形成在第二半导体层的表面和第三半导体层的表面上的第二导电类型的第四半导体层; 选择性地形成在第四半导体层的表面中的第一导电类型的第五半导体层; 第二主电极; 和控制电极。 第二和第三半导体层中的至少一个具有沿着一个方向的掺杂剂浓度分布，掺杂剂浓度分布在其两端以外的位置处具有局部最小值。

公开(公告)号：US20070021394A1

公开(公告)日：2007-01-25

申请号：US10562018

申请日：2004-06-25

申请人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

发明人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

IPC分类号： A61K31/655 ,  A61K31/5375 ,  A61K31/365 ,  A61K31/22 ,  C07D265/30 ,  C07C229/42

CPC分类号： C07C229/50 ,  C07D307/88

摘要： A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administraiton A 2-amino-bicyclo[3.1.0] hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.

摘要翻译： 一种有效治疗和预防精神疾病如精神分裂症，焦虑及其相关疾病，抑郁症，双相情感障碍和癫痫的药物。 该药物拮抗II型代谢型谷氨酸受体的作用，并且在口服给药中显示高活性的由式​​[I]表示的2-氨基 - 双环[3.1.0]己烷-2,6-二羧酸酯衍生物[其中R“ 1和R 2相同或不同，各自表示氢原子，C 1-10烷基等; X表示氢原子或氟原子; Y表示-OCHR 3 R 4等（其中R 3和R 4）相同或不同， 并且各自表示氢原子，C 1-10烷基等; n表示整数1或2）]，其药学上可接受的盐或其水合物。

公开(公告)号：US06739841B2

公开(公告)日：2004-05-25

申请号：US10389769

申请日：2003-03-18

申请人： Hitoshi Nishimura ,  Hiroshi Ohta

发明人： Hitoshi Nishimura ,  Hiroshi Ohta

IPC分类号： F04B4906

CPC分类号： F04C28/24 ,  F04C23/001 ,  F04C28/06 ,  F04C28/08 ,  F04C2240/403

摘要： An oil free screw compressor having a low-pressure stage compressor body and a high-pressure stage compressor body. Power of a motor driven by an inverter is transmitted to the compressor bodies through gears. A low-pressure stage blow-off two-way valve is provided in a pipe branching off midway an air pipe connecting between the high-pressure stage compressor body and the low-pressure stage compressor body, and a high-pressure stage blow-off two-way valve is provided in a pipe branching off from a discharge air pipe provided on a discharge side of the high-pressure stage compressor body. During no-load operation, a controller gives a command to the inverter to make the rotational speed of the motor a set lower limit rotational speed, and also gives an open command to the low-pressure stage blow-off two-way valve.

摘要翻译： 一种无油螺杆式压缩机，具有低压级压缩机体和高压级压缩机体。 由变频器驱动的电动机的功率通过齿轮传递到压缩机主体。 在高压级压缩机体和低压级压缩机体连接的空气管的中途分支的管道中设置有低压级吹出式二通阀，以及高压级吹出 在设置在高压级压缩机主体的排出侧的排气管上分支的管中设置有双向阀。 在空载运转时，控制器向变频器发出指令，使电动机的转速设定下限转速，并向低压级排放二通阀提供开启指令。

公开(公告)号：US06180124B2

公开(公告)日：2001-01-30

申请号：US09340012

申请日：1999-06-28

申请人： Hiroshi Ohta ,  Kumiko Hosokawa ,  Junichi Fukasawa ,  Kenzo Koike ,  Masaki Shimizu

发明人： Hiroshi Ohta ,  Kumiko Hosokawa ,  Junichi Fukasawa ,  Kenzo Koike ,  Masaki Shimizu

IPC分类号： A61K600

CPC分类号： A61K8/345 ,  A61K8/0212 ,  A61K8/26 ,  A61K8/29 ,  A61K8/39 ,  A61K8/86 ,  A61K2800/242 ,  A61Q19/00

摘要： The invention relates to a cosmetic composition comprising (A) a polyhydric alcohol and (B) a finely particulate metal oxide, wherein water is substantially not contained. The cosmetic composition has an optimum viscosity, undergoes no precipitation of particles, spreads well upon use and has good easiness of washing off and is hence particularly useful as a massaging cosmetic.

摘要翻译： 本发明涉及包含（A）多元醇和（B）细颗粒金属氧化物的化妆品组合物，其中基本上不含水。 化妆品组合物具有最佳的粘度，不会发生颗粒沉淀，使用时很好地铺展，并且具有良好的洗涤容易性，因此特别可用作按摩美容品。