公开(公告)号：US07365380B2

公开(公告)日：2008-04-29

申请号：US11214846

申请日：2005-08-31

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/62 ,  H01L31/105

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US07323731B2

公开(公告)日：2008-01-29

申请号：US11003444

申请日：2004-12-06

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C2

公开(公告)号：US07205523B2

公开(公告)日：2007-04-17

申请号：US11369819

申请日：2006-03-08

申请人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

发明人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/14601 ,  H04N5/35581 ,  H04N5/37452 ,  H04N5/378

摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

摘要翻译： 固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。 载流子保持区域形成为具有沟槽结构。

公开(公告)号：US20060124929A1

公开(公告)日：2006-06-15

申请号：US11291955

申请日：2005-12-02

申请人： Shigeru Nishimura ,  Seiichi Tamura ,  Hiroshi Yuzurihara

发明人： Shigeru Nishimura ,  Seiichi Tamura ,  Hiroshi Yuzurihara

IPC分类号： H01L31/0376

CPC分类号： H01L27/146 ,  H01L27/14698 ,  H01L31/03682 ,  H01L31/182 ,  Y02P70/521

摘要： A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).

摘要翻译： 一种用于形成像素区域的半导体衬底，其具有多个用于光电转换的像素，所述半导体衬底包括厚度为0.5-2.0的多晶硅膜，在像素区域承载表面的后表面上，并且具有 氧浓度为1.3E18-1.5E18原子/ cm 3（旧ASTM）。

公开(公告)号：US20060043442A1

公开(公告)日：2006-03-02

申请号：US11214846

申请日：2005-08-31

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US06964471B2

公开(公告)日：2005-11-15

申请号：US10270527

申请日：2002-10-16

申请人： Seiichi Tamura ,  Genzo Momma ,  Yukihiro Hayakawa ,  Yoshinori Kawasaki

发明人： Seiichi Tamura ,  Genzo Momma ,  Yukihiro Hayakawa ,  Yoshinori Kawasaki

IPC分类号： B41J2/05 ,  B41J2/14 ,  H01C7/00

CPC分类号： B41J2/14129 ,  B41J2202/03

摘要： To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 Ω/□ to 400 Ω/□, and has a thickness of 30 nm to 80 nm.

摘要翻译： 为了提供对重复脉冲应用具有足够高的耐久性的加热电阻膜，包括加热电阻膜，记录头和记录装置的记录头基板。 使用从记录头基板的热作用部分中的线流动的电流产生热能的加热电阻膜由具有200Ω/□至400Ω/□的薄层电阻的非晶态氮化钽氮化硅制成，并且具有 厚度为30nm至80nm。