摘要:
A method and a device for improving the measurement accuracy in the nm range for optical systems are disclosed. The object is provided with a plurality of structures oriented in the X and Y-coordinate direction. The light beam coming from at least one light source defines an optical illumination path.
摘要:
Device for measuring the position of a structure on an object 30 with at least one laser interferometer system 29 to determine a positional displacement of the object 30 in at least one spatial direction, whereby the object is placed on a stage which is translatable in the X and Y coordinate direction An illumination device is provided, which illuminates the structures to be measured. The structure is imaged on a detector 34 via a high-resolution microscope optics in incident light and/or transmitted light in the near UV spectral range. The illumination device is an excimer laser, a frequency multiplied solid-state or gas laser, or an excimer lamp.
摘要:
The present invention relates to a reference-beam interferometer for determining the position of a traversable stage, wherein an evacuated tube is inserted into the longer of the two interferometer legs. The tube is closed off by windows, which have a negative coefficient of thermal expansion and which can have a coating for reflecting heat radiation. Moreover, thermal compensation plates are inserted into the shorter of the two beam paths.
摘要:
In the production of semiconductor or other components, the structures are normally manufactured in different planes. In the orientation of these planes relative to each other a displacement or alignment is examined, among other things, and detected as an overlay defect. To reduce a systematic measuring defect a measuring device (10) is provided for measuring the overlay defect. This device has an illuminating device (12), a lens or objective (14) for focusing radiation from the illuminating device (12) onto the object (16) and a tube lens (18) for imaging the radiation onto a sensor unit (20). A compensator (22), in which the wave fronts of the incident radiation are tilted with spectral variation such that the axial transverse chromatic aberration is compensated for, is provided in the path of rays of the measuring device (10).
摘要:
Element for homogenizing the illumination with simultaneous setting of the polarization degree, wherein the element consists of at least two components. The first component is a microlens array, and the second component is a filter for setting the desired polarization.
摘要:
A metrology tool (1) for measuring the positions of structures (32) on a mask surface (31) is disclosed. On a measuring stage (33) a reflector (36) selective with respect to the wavelength is provided, which essentially reflects light within a first wavelength region emitted from a first illumination device (10), and essentially does not reflect light within a second wavelength region emitted from a second illumination device (20). The reflector (36) selective with respect to the wavelength preferentially is a dichroic mirror. By detecting the light within the first wavelength region reflected by the reflector (36) the position of predefined sections of outer edges (37) of the mask is determined. The light from the second wavelength region is used for determining the coordinates of structures on the mask. Due to the selectivity with respect to the wavelength of the reflector (36) this determination of coordinates is not perturbed by a reflection of the light within the second wavelength region from the reflector (36).
摘要:
A metrology tool (1) for measuring the positions of structures (32) on a mask surface (31) is disclosed. On a measuring stage (33) a reflector (36) selective with respect to the wavelength is provided, which essentially reflects light within a first wavelength region emitted from a first illumination device (10), and essentially does not reflect light within a second wavelength region emitted from a second illumination device (20). The reflector (36) selective with respect to the wavelength preferentially is a dichroic mirror. By detecting the light within the first wavelength region reflected by the reflector (36) the position of predefined sections of outer edges (37) of the mask is determined. The light from the second wavelength region is used for determining the coordinates of structures on the mask. Due to the selectivity with respect to the wavelength of the reflector (36) this determination of coordinates is not perturbed by a reflection of the light within the second wavelength region from the reflector (36).
摘要:
The present invention broadly comprises a device for supplying light at an illumination wavelength shorter than 300 nm. The device includes a first subassembly, having a light source for delivering light at a wavelength that is at least twice as long as the illumination wavelength; a second subassembly having at least one means for wavelength reduction; and a light guide that guides the light from the light source of the first subassembly into the second subassembly. The present invention also broadly comprises a method for supplying light at an illumination wavelength shorter than 300 nm.
摘要:
The invention relates to an objective for a microscope for dark field microscopy having alternating illumination with grazing incidence. A dark field objective is shown having a front lens for receiving light from a sample and having a dark field illumination device for guiding illumination light onto the sample, the dark field illumination device comprising at least one pair of light decoupling elements, which are each situated in pairs around the front lens opposite to the optical axis for counter parallel illumination of the sample.
摘要:
A coordinate measuring machine (1) for measuring structures (3) on a substrate (2) including a measurement table (20) movable in the X-coordinate direction and in the Y-coordinate direction, a measurement objective (9), at least one laser interferometer (24) for determining the position of the measurement table (20) and the measurement objective (9) wherein the measurement table (20), the measurement objective (9) and the at least one laser interferometer (24) are arranged in a vacuum chamber (50).