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143 条记录 (耗时 0.027 秒)

    Index guided semiconductor laser diode with reduced shunt leakage currents
    35.
    发明授权
    Index guided semiconductor laser diode with reduced shunt leakage currents 失效
    具有降低分流漏电流的折射率半导体激光二极管

    公开(公告)号：US5717707A

    公开(公告)日：1998-02-10

    申请号：US367549

    申请日：1995-01-03

    申请人： Kevin J. Beernink ,  David P. Bour ,  Thomas L. Paoli ,  Ross D. Bringans ,  Gregory J. Kovacs

    发明人： Kevin J. Beernink ,  David P. Bour ,  Thomas L. Paoli ,  Ross D. Bringans ,  Gregory J. Kovacs

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/204 ,  H01S5/2059 ,  H01S5/227 ,  H01S5/3413

    摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.

    摘要翻译： 由AlInP，GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率半导体激光二极管。 描述了通过n型IILD区域减少寄生漏电流的几种技术。 这些包括去除激光条外部材料的上部，这可以通过以自对准的方式湿法或干蚀刻材料来实现。 作为替代方案，在形成波导之后，在结构的无序和生长区域上生长适当掺杂的层以接触有源波导并同时阻挡来自无序区域的寄生并联电流。 另一种方法提供浅插入绝缘区域来代替用于减少电流屏障的盖层附近的n型无序区域。

    High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser
    38.
    发明授权
    High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser 失效
    大功率（1,4W）AlGaInP渐变折射率分离的限制异质结构可见（λ-658nm）激光

    公开(公告)号：US5003548A

    公开(公告)日：1991-03-26

    申请号：US247206

    申请日：1988-09-21

    申请人： David P. Bour ,  James R. Shealy

    发明人： David P. Bour ,  James R. Shealy

    IPC分类号： H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/3409

    摘要： Single quantum well short wavelength AlGaInP GRIN-SCH semiconductor lasers having high output power in the 660-680 nm range were prepared by organometallic vapor phase epitaxy. The laser active region preferably consists of a 100 .ANG. single Ga.sub.0.5 In.sub.0.5 P quantum well and 1600 .ANG. graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P quaternary alloys where y has a value from about 0.2 to 0.6. This structure reduces the broad-area threshold current compared to a double heterostructure laser to give pulsed thresholds as low as 1050 A/cm.sup.2. Total pulsed power of 1.4 W at 658 nm is available from an 80 .mu.m.times.300 .mu.m mesa-stripe laser. A differential quantum efficiency of up to about .about.56% was measured. Indicated uses include diode-pumped solid state laser applications and as a light source in optical disk drives and holographic scanners.

    摘要翻译： 通过有机金属气相外延制备在660-680nm范围内具有高输出功率的单量子阱短波长AlGaInP GRIN-SCH半导体激光器。 激光有源区优选由井的两侧上的100个ANGSTROM单个Ga0.5In0.5P量子阱和1600个ANGSTROM分级索引区组成。 渐变折射率区域由晶格匹配的梯度组成（AlyGa1-y）0.5In0.5P四元合金制成，其中y具有约0.2至0.6的值。 与双异质结构激光器相比，该结构减小了宽区域阈值电流，以提供低至1050A / cm 2的脉冲阈值。 在658nm处的总脉冲功率为1.4W，可从80μm×300μm的台面条纹激光器获得。 测量高达约差异量子效率的差分量子效率为56％。 指示用途包括二极管泵浦固态激光器应用以及作为光盘驱动器和全息扫描器中的光源。

    Method and system for a GAN vertical JFET utilizing a regrown gate
    39.
    发明授权
    Method and system for a GAN vertical JFET utilizing a regrown gate 有权
    使用再生栅的GAN垂直JFET的方法和系统

    公开(公告)号：US09184305B2

    公开(公告)日：2015-11-10

    申请号：US13198655

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L21/337 ,  H01L29/808 ,  H01L29/10 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。