公开(公告)号：US10680036B2

公开(公告)日：2020-06-09

申请号：US16451938

申请日：2019-06-25

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20200066637A1

公开(公告)日：2020-02-27

申请号：US16112333

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L23/535 ,  H01L27/108 ,  H01L29/08 ,  H01L23/532

Abstract: Some embodiments include an integrated assembly which has a semiconductor material with a surface. A first layer is over and directly against the surface. The first layer includes oxygen and a first metal. The relative amount of oxygen to the first metal is less than or equal to an amount sufficient to form stoichiometric metal oxide throughout the first layer. A second metal is over and directly against the first layer. A second layer is over and directly against the second metal. The second layer includes nitrogen and a third metal. Some embodiments include an integrated assembly which has a semiconductor material with a surface. A metal is adjacent the surface and is spaced from the surface by a distance of less than or equal to about 10 Å. There is no metal germanide or metal silicide between the metal and the surface.

公开(公告)号：US20190319069A1

公开(公告)日：2019-10-17

申请号：US16451938

申请日：2019-06-25

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US10026889B2

公开(公告)日：2018-07-17

申请号：US15057909

申请日：2016-03-01

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US09865456B1

公开(公告)日：2018-01-09

申请号：US15235365

申请日：2016-08-12

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US09548450B2

公开(公告)日：2017-01-17

申请号：US14807030

申请日：2015-07-23

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L47/00 ,  H01L45/00

CPC classification number: H01L45/147 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143

Abstract: Some embodiments include a device having a conductive material, a metal chalcogenide-containing material, and a region between the metal chalcogenide-containing material and the conductive material. The region contains a composition having a bandgap of at least about 3.5 electronvolts and a dielectric constant within a range of from about 1.8 to 25. Some embodiments include a device having a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes. The device also includes an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes. The electric-field-modifying region contains a composition having a bandgap of at least about 3.5 electronvolts having a low dielectric constant and a low conduction band offset relative to a workfunction of metal of the metal chalcogenide-containing material.

Abstract translation: 一些实施例包括具有导电材料，含金属硫族化物的材料以及含金属硫族化物的材料和导电材料之间的区域的器件。 该区域包含具有至少约3.5电子伏特的带隙和介于约1.8至25范围内的介电常数的组合物。一些实施方案包括具有第一电极，第二电极和含金属硫族化物的材料的装置， 第一和第二电极。 该装置还包括在含金属硫族化物的材料和第一和第二电极之一之间的电场修改区域。 电场改性区域含有相对于含金属硫族化物的材料的金属的功函数具有至少约3.5电子伏特的介电常数和低导带偏移的带隙的组合物。

公开(公告)号：US09543503B2

公开(公告)日：2017-01-10

申请号：US15045865

申请日：2016-02-17

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括磁性隧道结，其包括具有六方晶系结构的磁性和非磁性材料。 六方晶体结构通过靠近磁性隧道结的种子材料实现，其表现出与磁性隧道结相邻的磁性材料的六方晶系结构相匹配的六方晶系结构。 在一些实施方案中，种子材料邻近无定形基底材料形成，使得种子材料能够以六方晶体结构形成。 在一些实施方案中，磁性电池包括六方钴（h-Co）游离和固定区域以及与h-Co相邻的六方锌（h-Zn）种子区域的六方氮化硼（h-BN）隧道势垒区。 磁性单元的结构能够实现高隧道磁阻，高磁各向异性强度和低阻尼。 还公开了制造方法和半导体器件。

公开(公告)号：US09349945B2

公开(公告)日：2016-05-24

申请号：US14516347

申请日：2014-10-16

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括磁性，二次氧化物和吸气剂种子区域。 在形成期间，由于吸气剂物质引起的化学亲和力，扩散物质从前体磁性材料转移到吸气剂种子区域。 磁性材料的耗尽使得耗尽的磁性材料能够通过晶体结构从邻近的结晶材料传播而结晶，而不会受到现在富集的吸气剂种子区域的干扰。 这促进了高隧道磁阻和高磁各向异性强度。 在形成期间，由于由另一吸气剂物质引起的化学亲和力，另外的扩散物质从前体氧化物材料转移到吸气剂种子区域。 氧化物材料的耗尽使电池结构中的电阻降低和阻尼减小。 还公开了制造方法和半导体器件。

公开(公告)号：US09349803B2

公开(公告)日：2016-05-24

申请号：US14521088

申请日：2014-10-22

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/16 ,  H01L21/02 ,  H01L27/092 ,  H01L29/165 ,  H01L29/78 ,  H01L29/51 ,  H01L29/778

CPC classification number: H01L29/1606 ,  H01L21/02175 ,  H01L21/02527 ,  H01L21/02664 ,  H01L27/092 ,  H01L29/165 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/78 ,  Y02E10/50

Abstract: A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.

Abstract translation: 半导体石墨烯结构可以包括在石墨烯材料的至少一部分上的石墨烯材料和石墨烯 - 晶格匹配材料，其中所述石墨烯 - 晶格匹配材料具有在晶格常数的倍数的约±5％内的晶格常数，或 石墨烯材料的粘结长度。 半导体石墨烯结构可以具有至少约0.5eV的能带隙。 修饰石墨烯材料的能带隙的方法可包括在石墨烯材料的至少一部分上形成石墨烯 - 晶格匹配材料，所述石墨烯 - 晶格匹配材料的晶格常数在约±5％ 石墨烯材料的晶格常数或键长度。

公开(公告)号：US09312480B2

公开(公告)日：2016-04-12

申请号：US14323839

申请日：2014-07-03

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/08 ,  H01L29/02 ,  H01L47/00 ,  G11C11/56 ,  H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

Abstract translation: 一些实施例包括具有在一对导电结构之间的数据存储区域的存储单元。 数据存储区域被配置为支持通过存储器单元改变电阻的暂态结构。 数据存储区域包括两个或多个部分，其中一个部分支持短暂结构的较高电阻段，而不是另一部分。 一些实施例包括形成存储器单元的方法。 在一对导电结构之间形成第一氧化物和第二氧化物区域。 氧化物区域被配置为支持通过存储器单元改变电阻的暂态结构。 氧化物区域彼此不同，使得一个氧化物区域比另一个支撑了临时结构的较高电阻段。