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68 条记录 (耗时 0.023 秒)

    Method of processing a substrate made of a ferroelectric single crystalline material
    31.
    发明授权
    Method of processing a substrate made of a ferroelectric single crystalline material 失效
    处理由铁电单晶材料制成的基板的方法

    公开(公告)号：US06687448B2

    公开(公告)日：2004-02-03

    申请号：US09250190

    申请日：1999-02-16

    申请人： Makoto Iwai ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Makoto Iwai ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02B610

    CPC分类号： G02B6/1345 ,  G02F1/3558 ,  G02F1/3775

    摘要： A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.

    摘要翻译： 一种处理由铁电单晶材料制成的衬底的方法，包括以下步骤：通过质子交换衬底的一部分在衬底中形成所需的质子交换层，并选择性地除去质子交换层以形成凹陷 铁电单晶衬底中的沟槽结构，其中通过使用含有锂盐作为质子交换源的酸形成所需的质子交换层，形成凹沟结构的衬底的表面是X射线， 切割面或作为基板的铁电单晶材料的主表面的Z切割面，并且凹沟结构具有深度等于或大于其半开口宽度的凹部。

    Optical waveguide elements and a process for producing the same
    32.
    发明授权
    Optical waveguide elements and a process for producing the same 失效
    光波导元件及其制造方法

    公开(公告)号：US06404968B1

    公开(公告)日：2002-06-11

    申请号：US09519701

    申请日：2000-03-07

    申请人： Yukinobu Nakabayashi ,  Mitsuhiro Kitamura ,  Tatsuo Kawaguchi ,  Jungo Kondo ,  Minoru Imaeda

    发明人： Yukinobu Nakabayashi ,  Mitsuhiro Kitamura ,  Tatsuo Kawaguchi ,  Jungo Kondo ,  Minoru Imaeda

    IPC分类号： G02B610

    CPC分类号： G02B6/1342

    摘要： A process for producing an optical waveguide element by thermally diffusing a metal element or a metallic compound into a substrate having a photoelectric effect, includes the steps of: forming a waveguide pattern on the substrate, the waveguide pattern includes a metal element or metallic compound; forming a film on a main plane of the substrate that covers the entire waveguide pattern, the film having an electro-optic effect; and effecting the thermal diffusion of the metallic element or the metallic compound.

    摘要翻译： 通过将金属元素或金属化合物热扩散到具有光电效应的基板中来制造光波导元件的方法包括以下步骤：在基板上形成波导图案，所述波导图案包括金属元素或金属化合物; 在覆盖整个波导图案的基板的主平面上形成膜，该膜具有电光效应; 并且实现金属元素或金属化合物的热扩散。

    Single crystal-manufacturing equipment and a method for manufacturing the same
    33.
    发明授权
    Single crystal-manufacturing equipment and a method for manufacturing the same 失效
    单晶制造设备及其制造方法

    公开(公告)号：US06368407B2

    公开(公告)日：2002-04-09

    申请号：US09838409

    申请日：2001-04-19

    申请人： Ryuichi Ohuchi ,  Minoru Imaeda

    发明人： Ryuichi Ohuchi ,  Minoru Imaeda

    IPC分类号： C30B3500

    CPC分类号： C30B11/00 ,  C30B29/48 ,  Y10T83/445 ,  Y10T117/10

    摘要： An equipment is disclosed for producing a single crystal in each of plural containers by thermally treating a raw material for the single crystal each charged in each of the container, including heaters provided corresponding to each of the containers, an elevator to move each of the containers upward and downward relatively to the respective one of the heaters, and a connecting member to connect at least one of the container and the heater of each of plural sets of the containers and the heaters mechanically to the elevator, wherein each container is moved vertically relatively to the respective one of the heaters by driving the elevator and passed through an area of thermal treatment formed by the heater to continuously form a melt in the raw material inside the container, and the single crystal is continuously produced in the container by solidifying the melt.

    摘要翻译： 公开了一种用于通过热处理在每个容器中装入的每个容器中的单晶原料，包括对应于每个容器设置的加热器，在多个容器中的每一个中生产单晶的设备，移动每个容器 上下相对于相应的一个加热器，以及连接构件，用于将多组容器和加热器中的至少一个容器和加热器机械地连接到电梯，​​其中每个容器垂直相对移动 通过驱动电梯并通过由加热器形成的热处理区域连续地在容器内的原料中形成熔体，从而在容器内连续地制造单晶，使熔体固化 。

    Optoelectric articles and a process for producing the same
    38.
    发明授权
    Optoelectric articles and a process for producing the same 失效
    光电制品及其制造方法

    公开(公告)号：US5539569A

    公开(公告)日：1996-07-23

    申请号：US411413

    申请日：1995-03-27

    申请人： Tsuguo Fukuda ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Tsuguo Fukuda ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02F1/03 ,  C30B19/00 ,  C30B19/02 ,  C30B29/30 ,  G02B6/12 ,  G02B6/13 ,  G02F1/00 ,  G02B6/10

    CPC分类号： G02B6/131 ,  C30B19/02 ,  C30B29/30 ,  G02B2006/12042

    摘要： According to the invention, a film of optoelectric single crystal may be formed on a substrate made of optoelectric single crystal by a liquid phase epitaxial process. The process comprises the steps of producing a melt of a solute and a melting medium, a solid phase and a liquid phase coexisting in the melt; then cooling the liquid phase for producing super cooling state in the liquid phase; and contacting the substrate to the liquid phase to form the film on the substrate by an epitaxial growing process. The film may be produced on the substrate, the film having a half value width of an X-ray rocking curve not more than that of the substrate.

    摘要翻译： 根据本发明，可以通过液相外延工艺在由光电单晶制成的基板上形成光电单晶膜。 该方法包括以下步骤：在熔体中共熔融溶质和熔融介质，固相和液相的熔体; 然后冷却液相以在液相中产生超冷却状态; 并将衬底接触液相，通过外延生长工艺在衬底上形成膜。 膜可以在基板上制造，该膜具有不大于基板的X射线摇摆曲线的半值宽度。

    Method for manufacturing group III nitride single crystals
    39.
    发明授权
    Method for manufacturing group III nitride single crystals 有权
    III族氮化物单晶的制造方法

    公开(公告)号：US08404045B2

    公开(公告)日：2013-03-26

    申请号：US12655826

    申请日：2010-01-08

    申请人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

    发明人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

    IPC分类号： C30B21/02

    CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406

    摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

    摘要翻译： 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

    Gallium nitride single crystal growing method and gallium nitride single crystal
    40.
    发明授权
    Gallium nitride single crystal growing method and gallium nitride single crystal 有权
    氮化镓单晶生长法和氮化镓单晶

    公开(公告)号：US08241422B2

    公开(公告)日：2012-08-14

    申请号：US10594846

    申请日：2005-03-30

    申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    IPC分类号： C30B25/12

    CPC分类号： C30B9/10 ,  C30B29/406

    摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

    摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。