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公开(公告)号：US20180351518A1
公开(公告)日：2018-12-06
申请号：US16011803
申请日：2018-06-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO
CPC classification number: H03F1/565 , H03F3/195 , H03F3/21 , H03F3/245 , H03F2200/108 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/555
Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.
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公开(公告)号：US20240332118A1
公开(公告)日：2024-10-03
申请号：US18617375
申请日：2024-03-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kenji SASAKI , Satoshi GOTO , Masayuki AOIKE
IPC: H01L23/367 , H01L23/66 , H03F3/24
CPC classification number: H01L23/3675 , H01L23/66 , H03F3/245 , H01L2223/665 , H03F2200/451
Abstract: A composite board includes a first member and a second member on a first surface that is one surface of the first member. A first conductor protrusion protrudes from the second member in a direction in which the first surface faces. A second conductor protrusion protrudes from the composite board in the direction in which the first surface faces. The first member includes a first semiconductor board, and the second member includes a second semiconductor board having lower thermal conductivity than the first semiconductor board. A radio frequency amplifier circuit including first transistors is in the second member. The first conductor protrusion is electrically connected to the first transistors and at least partially overlaps with the first transistors in a plan view of the first surface. The composite board includes a connection part that reaches the first semiconductor board or the second semiconductor board from the second conductor protrusion.
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公开(公告)号：US20230307458A1
公开(公告)日：2023-09-28
申请号：US18325377
申请日：2023-05-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Toshiki MATSUI
CPC classification number: H01L27/1207 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/13014 , H01L2224/13082 , H01L2224/1403 , H01L2224/14051 , H01L2224/14155 , H01L2224/16225 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1033
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that, in plan view, has a central area and a peripheral area surrounding the central area, and a second base that has at least a part formed of a second semiconductor material different from the first semiconductor material and that includes a power amplifier circuit. In plan view, the second base is overlain by the central area, and does not overlap the peripheral area.
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公开(公告)号：US20230299804A1
公开(公告)日：2023-09-21
申请号：US18323626
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Shunji YOSHIMI , Satoshi GOTO
CPC classification number: H04B1/38 , H01Q1/2283
Abstract: A radio-frequency module includes a module substrate that has a principal surface, an integrated circuit on the principal surface that includes a power amplifier circuit, and an SMD on the principal surface that includes a circuit device directly connected to the power amplifier circuit. The integrated circuit includes a first base that has at least a part formed of a first semiconductor material, and a second base that has at least a part formed of a second semiconductor material and that includes the power amplifier circuit. The first base has two sides that are opposite each other in plan view. The SMD is closer to one side than the other side in plan view. In plan view, the second base is smaller than the first base and is overlain by the first base at a position closer to the one side than to the other side.
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公开(公告)号：US20230223969A1
公开(公告)日：2023-07-13
申请号：US18180199
申请日：2023-03-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Fumio HARIMA , Takanori UEJIMA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
Abstract: A radio frequency module includes a module substrate including major surfaces that face each other; a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed; a second base part that is at least partially comprised of a second semiconductor material having a thermal conductivity lower than the thermal conductivity of the first semiconductor material and in which an amplifier circuit is formed; and an external connection terminal disposed on or over the major surface. The first base part and the second base part are disposed on or over the major surface out of the major surfaces; and the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode.
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Patent Agency Ranking
公开(公告)号：US20230133510A1
公开(公告)日：2023-05-04
申请号：US18091423
申请日：2022-12-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Kazuhito NAKAI
IPC: H01L25/16 , H01L23/538 , H01L23/498 , H03F3/20 , H04B1/40 , H03F1/02
Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.
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公开(公告)号：US20220200548A1
公开(公告)日：2022-06-23
申请号：US17546831
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Yuji TAKEMATSU , Mitsunori SAMATA
Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
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公开(公告)号：US20220199548A1
公开(公告)日：2022-06-23
申请号：US17644043
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Masayuki Aoike , Mikiko Fukasawa
IPC: H01L23/552 , H01L23/00 , H01L23/498
Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.
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公开(公告)号：US20220199484A1
公开(公告)日：2022-06-23
申请号：US17554043
申请日：2021-12-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI
IPC: H01L23/367 , H01L23/66 , H03F3/195
Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
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公开(公告)号：US20220190847A1
公开(公告)日：2022-06-16
申请号：US17546764
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Shunji YOSHIMI , Mitsunori SAMATA
Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.
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