摘要:
The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.
摘要:
Disclosed are a curable composition characterized by using a curable composition including an organic polymer (A1) having one or more silicon-containing functional groups capable of cross-linking by forming siloxane bonds in which the one or more silicon-containing functional groups capable of cross-linking by forming siloxane bonds are silicon-containing functional groups each having three or more hydrolyzable groups on one or more silicon atoms thereof; and a method for controlling the recovery properties, durability and creep resistance of the cured article. Herewith, the present invention provides a curable composition capable of giving a cured article excellent in recovery properties, durability and creep resistance, and a method for controlling the recovery properties, durability and creep resistance of the cured article.
摘要:
The image forming apparatus includes a plurality of photosensitive members, a plurality of exposure portions to perform exposure on the plurality of photosensitive members, a development portion to form a toner image at the plurality of photosensitive members, a transfer medium to which the respective toner images formed on the plurality of photosensitive members are sequentially transferred so as to form an image, and a position correction portion to perform position correction by moving at least one photosensitive member among the plurality of photosensitive members, and the position correction of the photosensitive member is performed by swinging the photosensitive member by the position correction portion having a line on a circumference surface of the photosensitive member corresponding to an exposure position of the exposure portion as the center axis.
摘要:
Copolymers prepared by copolymerization of at least one fluorinated vinyl ether are provided. In one embodiment, the at least one fluorinated vinyl ether comprises ethylene directly substituted at an olefinic carbon atom with a moiety —OR* and optionally substituted with one, two, or three additional nonhydrogen substituents, wherein R* comprises a fluorinated alkyl moiety substituted with a protected or unprotected hydroxyl group, and further wherein an atom within R* may be (i) taken together with one of the additional nonhydrogen substituents, if present, or (ii) directly bound to an olefinic carbon atom, to form a ring. The polymers are useful, for example, in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要:
Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要:
A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.
摘要:
Disclosed is a method of bias adjustment for a millimeter wave radar apparatus that can efficiently and highly accurately adjust the bias of an MMIC used in a radio frequency circuit in the millimeter wave radar apparatus. The method comprises: providing a DA converter in a bias circuit in the millimeter wave radar apparatus comprising an antenna, a radio frequency unit, and a processing unit for performing transmission and reception processing of the radio frequency unit; connecting a signal generator in place of the antenna; and connecting a test processing unit and a control apparatus to the radio frequency unit, wherein the control apparatus applies an initial bias value in the form of a digital value to the MMIC, calculates the target value for the digital bias value based on the result of the measurement of the received signal, and takes the target value as the digital bias value for the production processing unit when the radio frequency characteristic of the received signal obtained by applying the target value to the MMIC lies within specified limits.
摘要:
A screw loosening prevention structure and a gas-pressure device are provided. The structure includes a first member that is formed with a container space filled with gas, and includes a first threaded portion, a second member that includes a second threaded portion, wherein the second member is threadedly coupled with the first member by threadedly engaging the second threaded portion with the first threaded portion, and receives a pressure from the gas in the container space of the first member, and a spring member provided between the first and second members in a deformed state in which the displacement of the spring member is greater than a relative displacement of the first and second members due to a loosening factor including the gas pressure that is received by this second member.
摘要:
An imaging module includes a flexible printed circuit board which has a first area on which a first functional element is mounted, a second area on which a second functional element is mounted, and a third area which is formed between the first area and the second area, an electronic component which is mounted on the first area, and an imaging device which is mounted on the second area. The flexible printed circuit board is formed by an insulating layer which is integrated, spreading over the first area, the second area, and the third area. The flexible printed circuit board is formed such that the flexible printed circuit board can be bent at least in the third area.
摘要:
A nonvolatile semiconductor memory device comprises an array of memory cells each including an antifuse to store information based on a variation in resistance in accordance with destruction of the insulator in the antifuse. The antifuse includes a semiconductor substrate, a first conduction layer formed in the surface of the semiconductor substrate, a first electrode provided on the first conduction layer to be given a first voltage, a second conduction layer provided on the semiconductor substrate with the insulator interposed therebetween, and a second electrode provided on the second conduction layer to be given a second voltage different from the first voltage. The first electrode or the second electrode is formed of a metal silicide.