Photoresist compositions and methods of use in high index immersion lithography
    31.
    发明授权
    Photoresist compositions and methods of use in high index immersion lithography 失效
    光刻胶组合物和高指数浸渍光刻中使用的方法

    公开(公告)号:US08003309B2

    公开(公告)日:2011-08-23

    申请号:US12015436

    申请日:2008-01-16

    IPC分类号: G03F7/00

    摘要: The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.

    摘要翻译: 本发明涉及包含光致抗蚀剂聚合物和含氟聚合物的组合物。 在一个实施方案中,含氟聚合物包含具有选自脂环族双六氟异丙醇和芳基双 - 六氟异丙醇的侧基的第一单体,优选选自氟化苯乙烯和氟化乙烯基醚的第二单体。 本发明组合物具有改进的与浸渍光刻中使用的高折射率烃流体的后退接触角,从而提供浸没式光刻中的改进的性能。

    CURABLE COMPOSITION AND METHOD FOR IMPROVING RECOVERY PROPERTIES AND CREEP PROPERTIES
    32.
    发明申请
    CURABLE COMPOSITION AND METHOD FOR IMPROVING RECOVERY PROPERTIES AND CREEP PROPERTIES 有权
    可固化组合物和改善回收性能和韧性的方法

    公开(公告)号:US20110172372A1

    公开(公告)日:2011-07-14

    申请号:US13053181

    申请日:2011-03-21

    IPC分类号: C08L71/02 C08L83/00 C08K5/544

    摘要: Disclosed are a curable composition characterized by using a curable composition including an organic polymer (A1) having one or more silicon-containing functional groups capable of cross-linking by forming siloxane bonds in which the one or more silicon-containing functional groups capable of cross-linking by forming siloxane bonds are silicon-containing functional groups each having three or more hydrolyzable groups on one or more silicon atoms thereof; and a method for controlling the recovery properties, durability and creep resistance of the cured article. Herewith, the present invention provides a curable composition capable of giving a cured article excellent in recovery properties, durability and creep resistance, and a method for controlling the recovery properties, durability and creep resistance of the cured article.

    摘要翻译: 公开了一种可固化组合物,其特征在于使用包含具有一个或多个能够通过形成硅氧烷键交联的含硅官能团的有机聚合物(A1)的固化性组合物,其中所述一个或多个能够交叉的含硅官能团 通过形成硅氧烷键的连接是在其一个或多个硅原子上具有三个或更多个可水解基团的含硅官能团; 以及用于控制固化制品的回收性能,耐久性和抗蠕变性的方法。 因此,本发明提供了能够提供回收性,耐久性和抗蠕变性优异的固化物的固化性组合物,以及控制固化物的回收性,耐久性和抗蠕变性的方法。

    Image forming apparatus
    33.
    发明授权
    Image forming apparatus 失效
    图像形成装置

    公开(公告)号:US07965968B2

    公开(公告)日:2011-06-21

    申请号:US12708732

    申请日:2010-02-19

    IPC分类号: G03G15/01

    摘要: The image forming apparatus includes a plurality of photosensitive members, a plurality of exposure portions to perform exposure on the plurality of photosensitive members, a development portion to form a toner image at the plurality of photosensitive members, a transfer medium to which the respective toner images formed on the plurality of photosensitive members are sequentially transferred so as to form an image, and a position correction portion to perform position correction by moving at least one photosensitive member among the plurality of photosensitive members, and the position correction of the photosensitive member is performed by swinging the photosensitive member by the position correction portion having a line on a circumference surface of the photosensitive member corresponding to an exposure position of the exposure portion as the center axis.

    摘要翻译: 图像形成装置包括多个感光构件,多个曝光部分,以在多个感光构件上进行曝光;显影部分,用于在多个感光构件上形成调色剂图像;转印介质,各调色剂图像 形成在多个感光构件上的多个感光构件被顺序地转印以形成图像,以及位置校正部分,通过移动多个感光构件中的至少一个感光构件来执行位置校正,并且执行感光构件的位置校正 通过位置校正部分使感光部件摆动,该位置校正部分具有与感光部件的曝光位置相对应的感光部件的圆周表面上的直线作为中心轴线。

    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
    34.
    发明授权
    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions 有权
    氟化乙烯基醚,其共聚物,并用于平版印刷光刻胶组合物

    公开(公告)号:US07947425B2

    公开(公告)日:2011-05-24

    申请号:US11501186

    申请日:2006-08-07

    IPC分类号: G03C1/00

    摘要: Copolymers prepared by copolymerization of at least one fluorinated vinyl ether are provided. In one embodiment, the at least one fluorinated vinyl ether comprises ethylene directly substituted at an olefinic carbon atom with a moiety —OR* and optionally substituted with one, two, or three additional nonhydrogen substituents, wherein R* comprises a fluorinated alkyl moiety substituted with a protected or unprotected hydroxyl group, and further wherein an atom within R* may be (i) taken together with one of the additional nonhydrogen substituents, if present, or (ii) directly bound to an olefinic carbon atom, to form a ring. The polymers are useful, for example, in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供通过至少一种氟化乙烯基醚的共聚制备的共聚物。 在一个实施方案中,所述至少一种氟化乙烯基醚包括在烯烃碳原子处直接被部分-OR *取代的乙烯,并任选地被一个,两个或三个另外的非氢取代基取代,其中R *包含被 保护或未保护的羟基,并且其中R *中的原子可以(i)与另外的非氢取代基之一(如果存在)或(ii)直接键合到烯属碳原子一起形成环。 聚合物可用于例如平版光刻胶组合物,特别是化学增强抗蚀剂。 在优选的实施方案中,聚合物对深紫外(DUV)辐射基本上是透明的,因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在基板上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Forming surface features using self-assembling masks
    36.
    发明授权
    Forming surface features using self-assembling masks 有权
    使用自组装掩模形成表面特征

    公开(公告)号:US07828986B2

    公开(公告)日:2010-11-09

    申请号:US11926722

    申请日:2007-10-29

    IPC分类号: B44C1/22 H01L21/302

    摘要: A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.

    摘要翻译: 一个方法。 提供了一种嵌段共聚物和另外的材料的组合。 共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 第一聚合物包括聚苯乙烯,第二聚合物包括聚(环氧乙烷)。 包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。 该组合物直接由第一层的表面形成。 附加材料的纳米结构在第一聚合物嵌段内自组装。 同时蚀刻膜和第一层。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率,并且低于第一层的蚀刻速率。 部分电影被删除。 特征保留在第一层的表面上。

    Bias adjustment of radio frequency unit in radar apparatus
    37.
    发明授权
    Bias adjustment of radio frequency unit in radar apparatus 有权
    雷达设备射频单元的偏置调整

    公开(公告)号:US07821447B2

    公开(公告)日:2010-10-26

    申请号:US12232067

    申请日:2008-09-10

    IPC分类号: G01S13/00

    CPC分类号: G01S7/4004 G01S7/032

    摘要: Disclosed is a method of bias adjustment for a millimeter wave radar apparatus that can efficiently and highly accurately adjust the bias of an MMIC used in a radio frequency circuit in the millimeter wave radar apparatus. The method comprises: providing a DA converter in a bias circuit in the millimeter wave radar apparatus comprising an antenna, a radio frequency unit, and a processing unit for performing transmission and reception processing of the radio frequency unit; connecting a signal generator in place of the antenna; and connecting a test processing unit and a control apparatus to the radio frequency unit, wherein the control apparatus applies an initial bias value in the form of a digital value to the MMIC, calculates the target value for the digital bias value based on the result of the measurement of the received signal, and takes the target value as the digital bias value for the production processing unit when the radio frequency characteristic of the received signal obtained by applying the target value to the MMIC lies within specified limits.

    摘要翻译: 公开了一种毫米波雷达装置的偏置调整方法,其能够高效且高精度地调整毫米波雷达装置中用于射频电路的MMIC的偏置。 该方法包括:在毫米波雷达装置的偏置电路中设置DA转换器,该雷达装置包括天线,射频单元和用于执行射频单元的发送和接收处理的处理单元; 连接信号发生器代替天线; 以及将测试处理单元和控制装置连接到所述射频单元,其中,所述控制装置将数字值形式的初始偏置值应用于所述MMIC,基于所述MMIC的结果来计算所述数字偏置值的目标值 当通过将目标值应用于MMIC而获得的接收信号的射频特性位于规定的限度内时,接收信号的测量,并将目标值作为生产处理单元的数字偏置值。

    Imaging module and method of manufacturing imaging module
    39.
    发明授权
    Imaging module and method of manufacturing imaging module 有权
    成像模块及成像模块制造方法

    公开(公告)号:US07808551B2

    公开(公告)日:2010-10-05

    申请号:US11934420

    申请日:2007-11-02

    IPC分类号: H04N5/225

    摘要: An imaging module includes a flexible printed circuit board which has a first area on which a first functional element is mounted, a second area on which a second functional element is mounted, and a third area which is formed between the first area and the second area, an electronic component which is mounted on the first area, and an imaging device which is mounted on the second area. The flexible printed circuit board is formed by an insulating layer which is integrated, spreading over the first area, the second area, and the third area. The flexible printed circuit board is formed such that the flexible printed circuit board can be bent at least in the third area.

    摘要翻译: 成像模块包括柔性印刷电路板,其具有安装有第一功能元件的第一区域,安装有第二功能元件的第二区域和形成在第一区域和第二区域之间的第三区域 安装在第一区域上的电子部件和安装在第二区域上的摄像装置。 柔性印刷电路板由整合在第一区域,第二区域和第三区域上的绝缘层形成。 柔性印刷电路板形成为使得柔性印刷电路板可以至少在第三区域中弯曲。

    Nonvolatile semiconductor memory device
    40.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US07796460B2

    公开(公告)日:2010-09-14

    申请号:US12140071

    申请日:2008-06-16

    IPC分类号: G11C8/00

    摘要: A nonvolatile semiconductor memory device comprises an array of memory cells each including an antifuse to store information based on a variation in resistance in accordance with destruction of the insulator in the antifuse. The antifuse includes a semiconductor substrate, a first conduction layer formed in the surface of the semiconductor substrate, a first electrode provided on the first conduction layer to be given a first voltage, a second conduction layer provided on the semiconductor substrate with the insulator interposed therebetween, and a second electrode provided on the second conduction layer to be given a second voltage different from the first voltage. The first electrode or the second electrode is formed of a metal silicide.

    摘要翻译: 非易失性半导体存储器件包括存储单元阵列,每个存储单元包括反熔丝,以根据抗反熔丝中的绝缘体的破坏来存储基于电阻变化的信息。 反熔丝包括半导体衬底,形成在半导体衬底的表面中的第一导电层,设置在第一导电层上以被赋予第一电压的第一电极,设置在半导体衬底上的绝缘体之间的第二导电层 以及设置在所述第二导电层上的第二电极,以被赋予不同于所述第一电压的第二电压。 第一电极或第二电极由金属硅化物形成。