公开(公告)号：US07212454B2

公开(公告)日：2007-05-01

申请号：US11158396

申请日：2005-06-22

申请人： Bendik Kleveland ,  Tae Hee Lee ,  Seung Geon Yu ,  Chia Yang ,  Feng Li ,  Xiaoyu Yang

发明人： Bendik Kleveland ,  Tae Hee Lee ,  Seung Geon Yu ,  Chia Yang ,  Feng Li ,  Xiaoyu Yang

IPC分类号： G11C29/00

CPC分类号： G11C29/816 ,  G11C17/14

摘要： A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.

摘要翻译： 公开了一种用于对存储器阵列进行编程的方法和装置。 在一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。 如果检测到缺陷，则用冗余字线修复字线。 字线然后被重新编程并重新检查缺陷。 在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。 如果检测到缺陷，则该字线与预先编程的相邻字线一起被修复。 在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷和预先编程的相邻字线。 如果在该字线上检测到缺陷，则该字线和先前编程的相邻字线用冗余字线修复。

公开(公告)号：USD1043173S1

公开(公告)日：2024-09-24

申请号：US29820927

申请日：2021-12-24

申请人： Shanshan Wu ,  Zijian Chen ,  Xiaoyu Yang

设计人： Shanshan Wu ,  Zijian Chen ,  Xiaoyu Yang

摘要： FIG. 1 is a perspective view of a toilet brush kit showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof; and,
FIG. 8 is a perspective view, showing the toilet brush kit in a state of use.
The shading is utilized to illustrate the surface contours of the toilet brush kit design in the drawings.
The broken lines in the drawings depict portions of the toilet brush kit that form no part of the claimed design.

公开(公告)号：US09014784B2

公开(公告)日：2015-04-21

申请号：US13670224

申请日：2012-11-06

申请人： Xiaoyu Yang ,  Tsinghua Zheng ,  Shinya Handa

发明人： Xiaoyu Yang ,  Tsinghua Zheng ,  Shinya Handa

IPC分类号： A61B5/05 ,  A61B5/055 ,  A61B10/02 ,  A61B5/00 ,  A61B19/00

CPC分类号： A61B5/0555 ,  A61B5/0037 ,  A61B5/4312 ,  A61B10/0233 ,  A61B90/11 ,  A61B90/17 ,  A61B2090/374

摘要： Apparatus associated with improved magnetic resonance imaging (MRI) guided needle biopsy procedures (e.g., breast needle biopsy) are described. One example apparatus includes a support structure configured to support a patient in a face-down prone position where a breast of the patient is positioned in a first free hanging pre-imaging position. The example apparatus includes an immobilization structure configured to reposition the breast into an immobilized position suitable for MRI and for medical instrument access. The immobilization structure may include a biopsy plate, a pressure plate, and MRI coils. The MRI coils are configured to be repositioned from a first position associated with the free hanging pre-imaging position to a second position associated with the immobilized position to facilitate improving the signal to noise ratio associated with signal received from the breast through the MRI coils. The biopsy plate is removable without removing either of the MRI coils.

摘要翻译： 描述了与改进的磁共振成像（MRI）引导的针活检程序（例如，乳房针活检）相关的装置。 一个示例性装置包括支撑结构，其被配置为将患者的患者置于朝向下倾斜的位置，其中患者的乳房位于第一自由悬挂的预成像位置。 示例性装置包括固定结构，其被配置为将乳房重新定位成适合于MRI和用于医疗器械进入的固定位置。 固定结构可以包括活检板，压力板和MRI线圈。 MRI线圈被配置为从与自由悬挂的预成像位置相关联的第一位置重新定位到与固定位置相关联的第二位置，以便于改进与通过MRI线圈从乳房接收的信号相关联的信噪比。 活检板是可移除的，而不去除MRI线圈之一。

公开(公告)号：US08269499B2

公开(公告)日：2012-09-18

申请号：US12791166

申请日：2010-06-01

申请人： Yoshinori Hamamura ,  Xiaoyu Yang ,  Nicholas Castrilla ,  Christopher J. Allen ,  Shinji Mitsui

发明人： Yoshinori Hamamura ,  Xiaoyu Yang ,  Nicholas Castrilla ,  Christopher J. Allen ,  Shinji Mitsui

IPC分类号： G01V3/00

CPC分类号： G01R33/3664 ,  G01R33/3628 ,  G01R33/3642 ,  G01R33/365 ,  G01R33/543

摘要： An electrically-controlled failsafe switch is included in an MRI transmit-and-receive RF coil assembly so as to protect it from induced RF currents in the event it is disconnected from an MRI system, but inadvertently left linked to strong MRI RF fields during imaging procedures using other RF coils.

摘要翻译： 在MRI发射和接收RF线圈组件中包括电控故障安全开关，以便在与MRI系统断开连接的情况下保护其免受感应RF电流的影响，但在成像期间无意中与强MRI射频场相关联 使用其他RF线圈的程序。

公开(公告)号：US08179717B2

公开(公告)日：2012-05-15

申请号：US12569869

申请日：2009-09-29

申请人： Zac Shepard ,  Xiaoyu Yang ,  Albert Meeks ,  Qing Li ,  Enosh Levi ,  Kim Le ,  Raz Dan ,  Brian Murphy

发明人： Zac Shepard ,  Xiaoyu Yang ,  Albert Meeks ,  Qing Li ,  Enosh Levi ,  Kim Le ,  Raz Dan ,  Brian Murphy

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C11/5621 ,  H01L21/563 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2225/06562 ,  H01L2924/01013 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data retention for blocks which are preloaded with content, such as by an electronic device manufacturer. Following the surface mounting, the previously-erased blocks are returned to the erased state. The threshold voltage of storage elements of the preloaded blocks can change during the surface mounting process due to a global charge effect phenomenon. The effect is most prominent for higher state storage elements which are surrounded by erased blocks, in a chip for which the wafer backside was thinned and polished. The erased blocks can be programmed using a single program pulse without performing a verify operation, as a wide threshold voltage distribution is acceptable.

摘要翻译： 通过将擦除的块编程为更高的阈值电压电平来准备用于在焊料回流过程中表面安装到衬底的非易失性存储器芯片封装，以改善例如由电子器件制造商预装载内容的块的数据保留。 在表面安装之后，先前擦除的块返回到擦除状态。 由于全局充电效应现象，预载块的存储元件的阈值电压可能在表面贴装过程中发生变化。 对于被擦除块包围的较高状态存储元件，晶片背面被薄化和抛光的芯片中的效果最为突出。 擦除的块可以使用单个编程脉冲编程，而不执行验证操作，因为宽的阈值电压分布是可接受的。

公开(公告)号：US07580958B2

公开(公告)日：2009-08-25

申请号：US11156509

申请日：2005-06-17

申请人： Yao-Ching Stephen Chen ,  Curt Lee Cotner ,  Baoqiu Cui ,  Tammie Dang ,  Joe Cheng-yu Huang ,  Claire Willey McFeely ,  Robert Thomas Miller ,  Manogari Nogi Simanjuntak ,  Yumi Kimura Tsuji ,  Xiaoyu Yang ,  Jay A. Yothers ,  Margaret Alice Zagelow

发明人： Yao-Ching Stephen Chen ,  Curt Lee Cotner ,  Baoqiu Cui ,  Tammie Dang ,  Joe Cheng-yu Huang ,  Claire Willey McFeely ,  Robert Thomas Miller ,  Manogari Nogi Simanjuntak ,  Yumi Kimura Tsuji ,  Xiaoyu Yang ,  Jay A. Yothers ,  Margaret Alice Zagelow

IPC分类号： G06F12/00 ,  G06F17/30

CPC分类号： G06F17/30595 ,  Y10S707/99952 ,  Y10S707/99953

摘要： Techniques are provided for supporting versions of a routine. A first version of the routine is created. A second version of the routine is generated in response to receiving an alter statement including an add version clause. The second version of the routine is activated in response to receiving an alter statement including an activate version clause.

摘要翻译： 提供了用于支持例程的版本的技术。 创建例程的第一个版本。 响应于接收到包含add version子句的alter语句，生成该例程的第二个版本。 响应于接收到包含activate version子句的alter语句，该例程的第二个版本被激活。

公开(公告)号：US07442366B2

公开(公告)日：2008-10-28

申请号：US11685519

申请日：2007-03-13

申请人： Ulrich Mueller ,  Lian Ma ,  Xiao Feng-Shou ,  Xiaoyu Yang

发明人： Ulrich Mueller ,  Lian Ma ,  Xiao Feng-Shou ,  Xiaoyu Yang

IPC分类号： C01B39/02

CPC分类号： C01B37/005 ,  C01B39/04 ,  C01B39/40 ,  C01B39/48 ,  Y10S423/22 ,  Y10S423/27

摘要： A process for preparing a zeolitic material, comprising (i) preparing a mixture comprising the at least one silicon containing precursor compound from which the zeolitic framework is formed, at least one pore forming agent, and at least one polymer which has an essentially spheroidal geometry in the mixture; (ii) crystallizing the zeolitic material from the mixture obtained in (i) to obtain the crystallized zeolitic material in its mother liquor.

摘要翻译： 一种制备沸石材料的方法，包括（i）制备包含所述至少一种含硅的前体化合物的混合物，所述至少一种含有硅沸石骨架的前体化合物由其形成，至少一种成孔剂和至少一种具有基本上球形几何形状的聚合物 在混合物中 （ii）从（i）中获得的混合物中结晶沸石材料，得到其母液中的结晶沸石材料。

公开(公告)号：US20070257800A1

公开(公告)日：2007-11-08

申请号：US11418471

申请日：2006-05-05

申请人： Xiaoyu Yang ,  Hiroyuki Fujita ,  Tsinghua Zheng

发明人： Xiaoyu Yang ,  Hiroyuki Fujita ,  Tsinghua Zheng

IPC分类号： G08B13/14 ,  H01Q1/52

CPC分类号： G06K19/073 ,  A61N1/08 ,  A61N1/086

摘要： An RFID tag for use with an MRI machine has an integrated circuit and structure for protecting it from damage when exposed to an intense MRI RF transmitter field. The structure for protecting the integrated circuit may include a controllable low impedance device coupled across the integrated circuit, a controllable high impedance device coupled in series with the integrated circuit, and/or frequency selective RF filter.

摘要翻译： 用于MRI机器的RFID标签具有集成电路和结构，用于在暴露于强烈的MRI RF发射器场时防止其损坏。 用于保护集成电路的结构可以包括跨集成电路耦合的可控低阻抗器件，与集成电路串联耦合的可控高阻抗器件和/或频率选择性RF滤波器。

公开(公告)号：US20070069241A1

公开(公告)日：2007-03-29

申请号：US11173973

申请日：2005-07-01

申请人： Xiaoyu Yang ,  Roy Scheuerlein ,  Feng Li ,  Albert Meeks

发明人： Xiaoyu Yang ,  Roy Scheuerlein ,  Feng Li ,  Albert Meeks

IPC分类号： H01L27/10 ,  H01L21/82

CPC分类号： H01L45/12 ,  G11C17/00 ,  G11C17/16 ,  H01L23/5252 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using antifuse materials having higher dielectric constant and higher acceleration factor than silicon dioxide, and by using diodes having lower band gaps than silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example hafnium silicon oxynitride or hafnium silicon oxide are particularly effective. Diode materials with band gaps lower than silicon, such as germanium or a silicon-germanium alloy are particularly effective.

摘要翻译： 通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有比硅更低的带隙的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并且在较低的电压下编程。 这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。 具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。 带隙低于硅的二极管材料，例如锗或硅 - 锗合金是特别有效的。

公开(公告)号：US20060291303A1

公开(公告)日：2006-12-28

申请号：US11158396

申请日：2005-06-22

申请人： Bendik Kleveland ,  Tae Lee ,  Seung Yu ,  Chia Yang ,  Feng Li ,  Xiaoyu Yang

发明人： Bendik Kleveland ,  Tae Lee ,  Seung Yu ,  Chia Yang ,  Feng Li ,  Xiaoyu Yang

IPC分类号： G11C29/00

CPC分类号： G11C29/816 ,  G11C17/14

摘要： A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.

摘要翻译： 公开了一种用于对存储器阵列进行编程的方法和装置。 在一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。 如果检测到缺陷，则用冗余字线修复字线。 字线然后被重新编程并重新检查缺陷。 在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。 如果检测到缺陷，则该字线与预先编程的相邻字线一起被修复。 在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷和预先编程的相邻字线。 如果在该字线上检测到缺陷，则该字线和先前编程的相邻字线用冗余字线修复。