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    Reconfigurable MRI-Guided Surgical Apparatus
    4.
    发明申请
    Reconfigurable MRI-Guided Surgical Apparatus 有权
    可重构MRI引导手术器械

    公开(公告)号：US20140128723A1

    公开(公告)日：2014-05-08

    申请号：US13670224

    申请日：2012-11-06

    申请人： Xiaoyu Yang ,  Tsinghua Zheng ,  Shinya Handa

    发明人： Xiaoyu Yang ,  Tsinghua Zheng ,  Shinya Handa

    IPC分类号： A61B5/055 ,  A61B10/02

    CPC分类号： A61B5/0555 ,  A61B5/0037 ,  A61B5/4312 ,  A61B10/0233 ,  A61B90/11 ,  A61B90/17 ,  A61B2090/374

    摘要： Apparatus associated with improved magnetic resonance imaging (MRI) guided needle biopsy procedures (e.g., breast needle biopsy) are described. One example apparatus includes a support structure configured to support a patient in a face-down prone position where a breast of the patient is positioned in a first free hanging pre-imaging position. The example apparatus includes an immobilization structure configured to reposition the breast into an immobilized position suitable for MRI and for medical instrument access. The immobilization structure may include a biopsy plate, a pressure plate, and MRI coils. The MRI coils are configured to be repositioned from a first position associated with the free hanging pre-imaging position to a second position associated with the immobilized position to facilitate improving the signal to noise ratio associated with signal received from the breast through the MRI coils. The biopsy plate is removable without removing either of the MRI coils.

    摘要翻译： 描述了与改进的磁共振成像（MRI）引导的针活检程序（例如，乳房针活检）相关的装置。 一个示例性装置包括支撑结构，其被配置为将患者的患者置于朝向下倾斜的位置，其中患者的乳房位于第一自由悬挂的预成像位置。 示例性装置包括固定结构，其被配置为将乳房重新定位成适合于MRI和用于医疗器械进入的固定位置。 固定结构可以包括活检板，压力板和MRI线圈。 MRI线圈被配置为从与自由悬挂的预成像位置相关联的第一位置重新定位到与固定位置相关联的第二位置，以便于改进与通过MRI线圈从乳房接收的信号相关联的信噪比。 活检板是可移除的，而不去除MRI线圈之一。

    Method and system for providing a magnetic recording pole having a dual sidewall angle
    5.
    发明授权
    Method and system for providing a magnetic recording pole having a dual sidewall angle 有权
    用于提供具有双重侧壁角的磁记录极的方法和系统

    公开(公告)号：US08563146B1

    公开(公告)日：2013-10-22

    申请号：US13169710

    申请日：2011-06-27

    申请人： Jinqiu Zhang ,  Ying Hong ,  Hai Sun ,  Hongping Yuan ,  Guanghong Luo ,  Xiaoyu Yang ,  Hongmei Han ,  Lingyun Miao

    发明人： Jinqiu Zhang ,  Ying Hong ,  Hai Sun ,  Hongping Yuan ,  Guanghong Luo ,  Xiaoyu Yang ,  Hongmei Han ,  Lingyun Miao

    IPC分类号： G11B5/33

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

    摘要： A method for fabricating a magnetic transducer having an air-bearing surface (ABS). An underlayer having a first and second regions and a bevel connecting these regions is provided. The first region is thicker and closer to the ABS than the second region. An intermediate layer conformal with the underlayer is provided. A hard mask layer having a top surface perpendicular to the ABS is formed on the intermediate layer. Part of the hard mask and intermediate layers are removed to provide a trench. The trench has a bottom surface and sidewalls having a first angle between the bottom surface and the intermediate layer and a second angle corresponding to the hard mask layer. A pole is provided in the trench. The pole has a pole tip, a yoke distal, and a bottom bevel. At least the yoke includes sidewalls having sidewall angles corresponding to the first and second angles.

    摘要翻译： 一种制造具有空气轴承表面（ABS）的磁换能器的方法。 提供具有第一和第二区域的底层以及连接这些区域的斜面。 第一区域比第二区域更厚且更接近ABS。 提供与底层共形的中间层。 在中间层上形成具有垂直于ABS的顶表面的硬掩模层。 除去硬掩模和中间层的一部分以提供沟槽。 沟槽具有底表面和在底表面和中间层之间具有第一角度的侧壁和对应于硬掩模层的第二角度。 在沟槽中设置一个极点。 杆具有极尖，轭远端和底斜面。 至少轭包括具有对应于第一和第二角度的侧壁角的侧壁。

    IC tags/RFID tags for magnetic resonance imaging applications
    7.
    发明授权
    IC tags/RFID tags for magnetic resonance imaging applications 有权
    用于磁共振成像应用的IC标签/ RFID标签

    公开(公告)号：US07821402B2

    公开(公告)日：2010-10-26

    申请号：US11418471

    申请日：2006-05-05

    申请人： Xiaoyu Yang ,  Hiroyuki Fujita ,  Tsinghua Zheng

    发明人： Xiaoyu Yang ,  Hiroyuki Fujita ,  Tsinghua Zheng

    IPC分类号： G08B13/14

    CPC分类号： G06K19/073 ,  A61N1/08 ,  A61N1/086

    摘要： An RFID tag for use with an MRI machine has an integrated circuit and structure for protecting it from damage when exposed to an intense MRI RF transmitter field. The structure for protecting the integrated circuit may include a controllable low impedance device coupled across the integrated circuit, a controllable high impedance device coupled in series with the integrated circuit, and/or frequency selective RF filter.

    摘要翻译： 用于MRI机器的RFID标签具有集成电路和结构，用于在暴露于强烈的MRI RF发射器场时防止其损坏。 用于保护集成电路的结构可以包括跨集成电路耦合的可控低阻抗器件，与集成电路串联耦合的可控高阻抗器件和/或频率选择性RF滤波器。

    Memory with high dielectric constant antifuses adapted for use at low voltage
    8.
    发明授权
    Memory with high dielectric constant antifuses adapted for use at low voltage 有权
    具有适用于低电压使用的高介电常数反熔丝的存储器

    公开(公告)号：US07781805B2

    公开(公告)日：2010-08-24

    申请号：US12367214

    申请日：2009-02-06

    申请人： Xiaoyu Yang ,  Roy E. Scheurelein ,  Feng Li ,  Albert T. Meeks

    发明人： Xiaoyu Yang ,  Roy E. Scheurelein ,  Feng Li ,  Albert T. Meeks

    IPC分类号： H01L29/66

    CPC分类号： H01L45/12 ,  G11C17/00 ,  G11C17/16 ,  H01L23/5252 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

    摘要翻译： 通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有较低的二极管的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并以较低的电压编程 带隙比硅。 这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。 具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。 带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

    METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE
    9.
    发明申请
    METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE 有权
    涉及适用于低电压使用的高介电常数抗体的记忆体的方法

    公开(公告)号：US20090141535A1

    公开(公告)日：2009-06-04

    申请号：US12367258

    申请日：2009-02-06

    申请人： Xiaoyu Yang ,  Roy E. Scheuerlein ,  Feng Li ,  Albert T. Meeks

    发明人： Xiaoyu Yang ,  Roy E. Scheuerlein ,  Feng Li ,  Albert T. Meeks

    IPC分类号： G11C17/16 ,  G11C17/00 ,  G11C17/06 ,  G11C7/00 ,  H01L21/00

    CPC分类号： H01L45/12 ,  G11C17/00 ,  G11C17/16 ,  H01L23/5252 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

    摘要翻译： 方法包括使用具有包含二极管和反熔丝的存储单元的存储器阵列，其中通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝，其中反熔丝被制成较小的并以较低的电压编程，以及 其中二极管由具有比硅的带隙低的带隙的材料制成。 这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。 具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。 带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

    Process for preparing a nanosized zeolitic material
    10.
    发明申请
    Process for preparing a nanosized zeolitic material 有权
    制备纳米沸石材料的方法

    公开(公告)号：US20060239906A1

    公开(公告)日：2006-10-26

    申请号：US11111871

    申请日：2005-04-22

    申请人： Ulrich Mueller ,  Lian Ma ,  Xiao Feng-Shou ,  Xiaoyu Yang

    发明人： Ulrich Mueller ,  Lian Ma ,  Xiao Feng-Shou ,  Xiaoyu Yang

    IPC分类号： C01B39/04 ,  C01B33/36

    CPC分类号： C01B37/005 ,  C01B39/04 ,  C01B39/40 ,  C01B39/48 ,  Y10S423/22 ,  Y10S423/27

    摘要： A process for preparing a zeolitic material, comprising (i) preparing a mixture comprising the at least one silicon containing precursor compound from which the zeolitic framework is formed, at least one pore forming agent, and at least one polymer which has an essentially spheroidal geometry in the mixture; (ii) crystallizing the zeolitic material from the mixture obtained in (i) to obtain the crystallized zeolitic material in its mother liquor.

    摘要翻译： 一种制备沸石材料的方法，包括（i）制备包含所述至少一种含硅的前体化合物的混合物，所述至少一种含有硅沸石骨架的前体化合物由其形成，至少一种成孔剂和至少一种具有基本上球形几何形状的聚合物 在混合物中 （ii）从（i）中获得的混合物中结晶沸石材料，得到其母液中的结晶沸石材料。