公开(公告)号：US20090314798A1

公开(公告)日：2009-12-24

申请号：US11912613

申请日：2006-04-25

申请人： Minna Hovinen ,  John R. Kingery ,  Glenn M. Tom ,  Kevin T. O'Dougherty ,  Kirk Mikkelsen ,  Donald D. Ware ,  Peter C. Van Buskirk

发明人： Minna Hovinen ,  John R. Kingery ,  Glenn M. Tom ,  Kevin T. O'Dougherty ,  Kirk Mikkelsen ,  Donald D. Ware ,  Peter C. Van Buskirk

IPC分类号： B67D5/06 ,  B65D83/62

CPC分类号： B65D83/0061 ,  B01J4/02 ,  B01J2219/00065 ,  B01J2219/00067 ,  B01J2219/00069 ,  B01J2219/00164 ,  G01F23/18

摘要： Fluid supply systems for storage and dispensing of chemical reagents and compositions, e.g., high purity liquid reagents and chemical mechanical polishing compositions used to manufacture microelectronic device products, having capability for detection of an empty or near-empty condition when the contained liquid is at or approaching depletion during dispensing operation. Fluid delivery systems employing empty detect arrangements are described, including pressure transducer monitoring of dispensed material intermediate the supply package and a servo-hydraulic dispense pump, or monitoring of dispenser chamber replenishment times in a dispenser being replenished on a cyclic schedule to flow material from the dispenser to a downstream tool utilizing the dispensed material.

摘要翻译： 用于储存和分配化学试剂和组合物的流体供应系统，例如用于制造微电子器件产品的高纯度液体试剂和化学机械抛光组合物，具有在所含液体处于或等待时检测空或近空状态的能力， 在分配操作期间接近耗尽。 描述了使用空的检测装置的流体输送系统，包括压力传感器监测供应包装中间的分配材料和伺服液压分配泵，或监测在分配器中的分配器室补充时间，该分配器在循环调度中被补充以从 分配器利用所分配的材料到下游工具。

公开(公告)号：US20090205964A1

公开(公告)日：2009-08-20

申请号：US12305652

申请日：2007-06-18

申请人： William Martin Holber ,  Mackenzie King ,  Peter C. Van Buskirk

发明人： William Martin Holber ,  Mackenzie King ,  Peter C. Van Buskirk

IPC分类号： G01N27/416 ,  C25D21/12

CPC分类号： H01L21/76877 ,  C25D21/12 ,  H01L21/2885

摘要： A sampling head, and/or an array including same for use in electrochemical deposition of various metal(s) on wafers or other substrates suitable for use in microelectronic devices or components thereof.

摘要翻译： 一种采样头和/或包括其的阵列，用于在适用于微电子器件或其组件的晶片或其他衬底上的各种金属的电化学沉积中。

公开(公告)号：US07005303B2

公开(公告)日：2006-02-28

申请号：US10836550

申请日：2004-04-30

申请人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

发明人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

IPC分类号： H01L21/00

CPC分类号： H01L21/02271 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/02356 ,  H01L21/31691

摘要： A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

摘要翻译： 用于沉积适合于集成以制造铁电存储器件的含铋陶瓷薄膜的低温CVD工艺。 含铋膜可以使用三（β-二酮）铋前体形成。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。

公开(公告)号：US06730523B2

公开(公告)日：2004-05-04

申请号：US09873138

申请日：2001-06-01

申请人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

发明人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

IPC分类号： H01L2100

CPC分类号： H01L21/31691 ,  C23C16/40 ,  C23C16/56

摘要： A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

摘要翻译： 使用三（β-二酮）铋前体的低温CVD方法，用于沉积适合于制造铁电存储器件的一体化的铋陶瓷薄膜。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。

公开(公告)号：US06303391B1

公开(公告)日：2001-10-16

申请号：US08975087

申请日：1997-11-20

申请人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

发明人： Frank S. Hintermaier ,  Christine Dehm ,  Wolfgang Hoenlein ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

IPC分类号： H01L2100

CPC分类号： H01L21/31691 ,  C23C16/40 ,  C23C16/56

摘要： A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

摘要翻译： 使用三（β-二酮）铋前体的低温CVD方法，用于沉积适合于制造铁电存储器件的一体化的铋陶瓷薄膜。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。

公开(公告)号：US06284654B1

公开(公告)日：2001-09-04

申请号：US09061380

申请日：1998-04-16

申请人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Peter C. Van Buskirk

发明人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Peter C. Van Buskirk

IPC分类号： H01L2144

CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L28/55 ,  H01L28/75

摘要： A method of fabricating an electrode structure for a ferroelectric device structure including a ferroelectric material, involving chemical vapor deposition of a hybrid electrode constituting a multilayer electrode structure or an alloyed electrode structure, using either bubbler delivery or liquid delivery chemical vapor deposition.

摘要翻译： 制造包括铁电材料的铁电体器件结构的电极结构的方法，所述铁电体材料包括使用起泡器输送或液体输送化学气相沉积来构成多层电极结构的混合电极或合金电极结构的化学气相沉积。

公开(公告)号：US06254792B1

公开(公告)日：2001-07-03

申请号：US09093291

申请日：1998-06-08

申请人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter C. Kirlin ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter C. Kirlin ,  Thomas H. Baum

IPC分类号： C23F112

CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

公开(公告)号：US12035720B2

公开(公告)日：2024-07-16

申请号：US17343723

申请日：2021-06-09

申请人： Jeffrey F. Roeder ,  Melissa A. Petruska ,  Trevor E. James ,  Thomas J. Spoonmore ,  Peter C. Van Buskirk

发明人： Jeffrey F. Roeder ,  Melissa A. Petruska ,  Trevor E. James ,  Thomas J. Spoonmore ,  Peter C. Van Buskirk

IPC分类号： A01N59/20 ,  A01N25/10 ,  A01N59/06

CPC分类号： A01N59/20 ,  A01N25/10 ,  A01N59/06

摘要： Polymer coatings and surfaces are disclosed with antimicrobial properties. The antimicrobial action is provided by high surface area materials contained within the coating or surface. The high surface area materials may contain photocatalysts that create reactive oxygen species upon exposure to visible light or transition metals that create reactive oxygen species upon exposure to hydrogen peroxide. The high surface area materials may also sorb disinfecting liquids and desorb them over time to provide disinfection.

公开(公告)号：US11241671B2

公开(公告)日：2022-02-08

申请号：US16680495

申请日：2019-11-12

申请人： Melissa A. Petruska ,  Trevor E. James ,  James D. Carruthers ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder

发明人： Melissa A. Petruska ,  Trevor E. James ,  James D. Carruthers ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder

IPC分类号： B01J21/04 ,  B01J21/06 ,  B01J21/08 ,  B01J21/12 ,  B01J23/10 ,  B01J35/00 ,  B01J35/02 ,  B01J35/04 ,  B01J35/08 ,  B01J35/10 ,  A61L2/08 ,  A61L2/10 ,  A61L2/16 ,  B82Y35/00 ,  B82Y40/00

摘要： Monolithic composite photocatalysts for fluid purification, chemical transformations, and surface sterilization are disclosed. The monolithic composite photocatalysts comprise a photoactive nanocrystal component and a non-photoactive porous support. Photocatalytic fluid purification systems that contact an impurity-containing fluid with the subject monolithic composite photocatalysts are also disclosed.

公开(公告)号：US11052385B2

公开(公告)日：2021-07-06

申请号：US16212663

申请日：2018-12-06

申请人： Peter C. Van Buskirk ,  Maryam Golalikhani ,  Melissa A. Petruska ,  Jeffrey F. Roeder

发明人： Peter C. Van Buskirk ,  Maryam Golalikhani ,  Melissa A. Petruska ,  Jeffrey F. Roeder

IPC分类号： B01J21/06 ,  B01J23/745 ,  B01J35/00 ,  B01J35/02 ,  B01J37/02 ,  A61L9/20

摘要： The Invention describes integration of photocatalytic materials into composite surfaces in order to achieve antimicrobial properties. Aspects of the invention include types of photocatalytic materials and methods to achieve long lifetimes, high durability and mechanical robustness, for application to medical and sanitary uses, among others. In particular, the invention describes production of photocatalytic islands on a porous support substrate, and various methods to prevent full contact of a matrix material with the photocatalytic islands on the porous support substrate when forming the photocatalytic composite. Reducing the area of contact between the matrix material and the photocatalytic material improves the lifetime of the photocatalytic materials employed in the photocatalytic composite.