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公开(公告)号：US20070227231A1
公开(公告)日：2007-10-04
申请号：US11678524
申请日：2007-02-23
申请人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Vourloumis , Bernard Lindsay
发明人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Vourloumis , Bernard Lindsay
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。
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公开(公告)号：US20070210248A1
公开(公告)日：2007-09-13
申请号：US11371907
申请日：2006-03-10
申请人： Bon-Woong Koo , Ludovic Godet , Vassilis Vourloumis , Vikram Singh , Ziwei Fang
发明人： Bon-Woong Koo , Ludovic Godet , Vassilis Vourloumis , Vikram Singh , Ziwei Fang
IPC分类号： H01J49/40
CPC分类号： H01J49/40 , H01J37/32935
摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。
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公开(公告)号：US08461558B2
公开(公告)日：2013-06-11
申请号：US13175494
申请日：2011-07-01
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译： 一种用于植入衬底的系统。 该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。 该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压 在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。 该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。
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公开(公告)号：US08072149B2
公开(公告)日：2011-12-06
申请号：US12079978
申请日：2008-03-31
申请人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
发明人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J27/08 , H01J37/04 , H01J37/3171 , H01J2237/03 , H01J2237/06308 , H01J2237/082
摘要： A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.
摘要翻译： 公开了一种双重不平衡间接加热阴极（IHC）离子室。 阴极具有不同的表面积，从而影响每个阴极的辐射量。 在优选实施例中，一个阴极具有通常用于IHC电离的尺寸和尺寸，如传统上用于热模式操作。 优选地，位于腔室的相对壁上的第二阴极具有较小的尺寸。 这种较小的阴极仍然被灯丝间接加热，但是由于其尺寸较小，辐射较少的热量进入源室，从而允许离子源以冷模式运行，从而保持目标分子的分子结构。 在两种模式中，未使用的阴极优选被偏压以与IHC处于相同的电位，从而允许其用作推斥器。
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公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译： 提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。 间隙界面限定在冷却板和腔室的壁之间。 在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。
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公开(公告)号：US07888662B2
公开(公告)日：2011-02-15
申请号：US12143247
申请日：2008-06-20
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced intothe source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译： 在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。 当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。 等离子体增强化学反应。 在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。
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公开(公告)号：US07723707B2
公开(公告)日：2010-05-25
申请号：US11781700
申请日：2007-07-23
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。
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公开(公告)号：US07476849B2
公开(公告)日：2009-01-13
申请号：US11371907
申请日：2006-03-10
CPC分类号： H01J49/40 , H01J37/32935
摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。
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39.发明授权Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping 有权装有静电夹具，晶圆背面气体冷却和等离子体掺杂的高压操作能力的晶片压板公开(公告)号：US07126808B2
公开(公告)日：2006-10-24
申请号：US10816289
申请日：2004-04-01
IPC分类号： H02H1/00
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/6831 , Y10T279/23
摘要： An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen. Then, the mechanism places the lift pins at a second predetermined distance above the surface of the wafer platen in the lift off position such that a workpiece removing device, such as a robotic arm, may be positioned between the workpiece and the wafer platen without contacting either surface.
摘要翻译： 在半导体处理期间提供一种用于处理诸如半导体晶片的工件的装置。 该装置包括具有多个通道的晶片压板，每个通道从晶片压板的顶表面延伸到底表面，多个提升销与通道对准，以及用于将升降销接合在装载位置 工件，工件的夹紧位置，从而可以对工件执行所需的半导体工艺，以及用于在半导体工艺完成之后从晶片压板移除工件的剥离位置。 该机构将升降销放置在晶片压板的表面下方处于装载位置，然后将提升销提升到夹具位置上的晶片压板表面之上的第一预定距离，使得第一预定距离允许工件为 夹在晶圆台板上。 然后，该机构将提升销放置在提升离开位置上方的晶片台板表面上方第二预定距离处，使得诸如机器臂的工件移除装置可以位于工件和晶片压板之间而不接触 任一表面。
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40.发明授权Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime 有权阴极侵蚀现场监测方法及系统，预测阴极寿命公开(公告)号：US08756021B2
公开(公告)日：2014-06-17
申请号：US12912312
申请日：2010-10-26
IPC分类号： G01B3/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译： 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。
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