中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.022 seconds)

    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION
    31.
    发明申请
    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION 有权

    公开(公告)号：US20210217800A1

    公开(公告)日：2021-07-15

    申请号：US17149574

    申请日：2021-01-14

    Applicant: Quantum-Si Incorporated

    Inventor： Eric A.G. Webster ,  Changhoon Choi ,  Dajiang Yang ,  Xin Wang ,  Todd Rearick ,  Kyle Preston ,  Ali Kabiri ,  Gerard Schmid

    IPC: H01L27/146

    Abstract: Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

    Integrated sensor for lifetime characterization
    33.
    发明授权
    Integrated sensor for lifetime characterization 有权

    公开(公告)号：US12300711B2

    公开(公告)日：2025-05-13

    申请号：US18520502

    申请日：2023-11-27

    Applicant: Quantum-Si Incorporated

    Inventor： Eric A.G. Webster ,  Changhoon Choi ,  Dajiang Yang ,  Xin Wang ,  Todd Rearick ,  Kyle Preston ,  Ali Kabiri ,  Gerard Schmid

    IPC: H01L27/146

    Abstract: Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

    WAVEGUIDE EXCITATION UNIFORMITY
    34.
    发明申请
    WAVEGUIDE EXCITATION UNIFORMITY 有权

    公开(公告)号：US20250093264A1

    公开(公告)日：2025-03-20

    申请号：US18962212

    申请日：2024-11-27

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Sharath Hosali ,  James Beach ,  Kyle Preston ,  Ali Kabiri ,  Bing Shen

    IPC: G01N21/64 ,  B01L3/00 ,  C12Q1/6816 ,  G02B6/122 ,  G02B6/14

    Abstract: Systems and methods for optical power distribution within an integrated device, in a substantially uniform manner, to a large number of sample wells and/or other photonic elements. The integrated device and related instruments and systems may be used to analyze samples in parallel. The integrated device may include a grating coupler configured to receive light from an excitation source and optically couple with multiple waveguides configured to couple with sample wells. Vertical extents of optical modes of individual waveguides may be modulated to adjust confinement of light within the waveguides. This modulation may enable more uniform distribution of excitation light to the sample wells, improve excitation efficiency, and prevent overpower on regions of the integrated device.

    Sensor for lifetime plus spectral characterization
    35.
    发明授权
    Sensor for lifetime plus spectral characterization 有权

    公开(公告)号：US12203855B2

    公开(公告)日：2025-01-21

    申请号：US18539068

    申请日：2023-12-13

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Dajiang Yang ,  Eric A. G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston

    IPC: G01N21/64

    Abstract: Some aspects relate to integrated devices for obtaining timing and/or spectral information from incident light. In some embodiments, a pixel may include one or more charge storage regions configured to receive charge carriers generated responsive to incident photons from a light source, with charge carriers stored in the charge storage region(s) indicative of spectral and timing information. In some embodiments, a pixel may include regions having different depths, each configured to generate charge carriers responsive to incident photons. In some embodiments, a pixel may include multiple charge storage regions having different depths, and one or more of the charge storage regions may be configured to receive the incident photons and generate charge carriers therein. In some embodiments, a pixel may include an optical sorting element configured to direct at least some incident photons to one charge storage region and other incident photons to another charge storage region.

    OPTICAL MICRODISKS FOR INTEGRATED DEVICES
    36.
    发明公开
    OPTICAL MICRODISKS FOR INTEGRATED DEVICES 审中-公开

    公开(公告)号：US20240272354A1

    公开(公告)日：2024-08-15

    申请号：US18627563

    申请日：2024-04-05

    Applicant: Quantum-Si Incorporated

    Inventor： Ali Kabiri ,  Bing Shen ,  Gerard Schmid ,  James Beach ,  Kyle Preston ,  Sharath Hosali

    IPC: G02B6/122 ,  G02B6/12 ,  G02B6/136

    CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B2006/12109 ,  G02B2006/12138

    Abstract: Apparatus and methods for improving optical signal collection in an integrated device are described. A microdisk can be formed in an integrated device and increase collection and/or concentration of radiation incident on the microdisk and re-radiated by the microdisk. An example integrated device that can include a microdisk may be used for analyte detection and/or analysis. Such an integrated device may include a plurality of pixels, each having a reaction chamber for receiving a sample to be analyzed, an optical microdisk, and an optical sensor configured to detect optical emission from the reaction chamber. The microdisk can comprise a dielectric material having a first index of refraction that is embedded in one or more surrounding materials having one or more different refractive index values.

    Sensor for lifetime plus spectral characterization
    37.
    发明授权
    Sensor for lifetime plus spectral characterization 有权

    公开(公告)号：US11885744B2

    公开(公告)日：2024-01-30

    申请号：US17149310

    申请日：2021-01-14

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Dajiang Yang ,  Eric A. G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston

    IPC: G01N21/64

    CPC classification number: G01N21/6428 ,  G01N2021/6417 ,  G01N2021/6439

    Abstract: Some aspects relate to integrated devices for obtaining timing and/or spectral information from incident light. In some embodiments, a pixel may include one or more charge storage regions configured to receive charge carriers generated responsive to incident photons from a light source, with charge carriers stored in the charge storage region(s) indicative of spectral and timing information. In some embodiments, a pixel may include regions having different depths, each configured to generate charge carriers responsive to incident photons. In some embodiments, a pixel may include multiple charge storage regions having different depths, and one or more of the charge storage regions may be configured to receive the incident photons and generate charge carriers therein. In some embodiments, a pixel may include an optical sorting element configured to direct at least some incident photons to one charge storage region and other incident photons to another charge storage region.

    INTEGRATED SENSOR FOR MULTI-DIMENSIONAL SIGNAL ANALYSIS
    38.
    发明公开
    INTEGRATED SENSOR FOR MULTI-DIMENSIONAL SIGNAL ANALYSIS 审中-公开

    公开(公告)号：US20240003811A1

    公开(公告)日：2024-01-04

    申请号：US18335458

    申请日：2023-06-15

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Dajiang Yang ,  Eric A.G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston ,  Brian Reed

    IPC: G01N21/64 ,  H01L27/146

    CPC classification number: G01N21/6454 ,  G01N21/6428 ,  H01L27/14603 ,  G01N21/6408 ,  G01N2021/6463

    Abstract: Some aspects relate to an integrated circuit, comprising at least one photodetection region configured to generate charge carriers responsive to incident photons emitted from a sample, at least one charge storage region configured to receive the charge carriers from the photodetection region, and at least one controller configured to obtain information about the incident photons, the information comprising at least one member selected from the group comprising pulse duration and interpulse duration and at least one member selected from the group comprising wavelength information, luminescence lifetime information, and intensity information. In some embodiments, the information comprises at least three, four, and/or five members selected from the group comprising wavelength information, luminescence lifetime information, intensity information, pulse duration information, and interpulse duration information. In some embodiments, the information obtained may be used to identify the sample.

Patent Agency Ranking