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    Integrated sensor for multi-dimensional signal analysis
    2.
    发明授权
    Integrated sensor for multi-dimensional signal analysis 有权

    公开(公告)号：US11719639B2

    公开(公告)日：2023-08-08

    申请号：US17190331

    申请日：2021-03-02

    申请人： Quantum-Si Incorporated

    发明人： Gerard Schmid ,  Dajiang Yang ,  Eric A. G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston ,  Brian Reed

    IPC分类号： G01N21/64 ,  H01L27/146

    CPC分类号： G01N21/6454 ,  G01N21/6408 ,  G01N21/6428 ,  H01L27/14603 ,  G01N2021/6463

    摘要： Some aspects relate to an integrated circuit, comprising at least one photodetection region configured to generate charge carriers responsive to incident photons emitted from a sample, at least one charge storage region configured to receive the charge carriers from the photodetection region, and at least one controller configured to obtain information about the incident photons, the information comprising at least one member selected from the group comprising pulse duration and interpulse duration and at least one member selected from the group comprising wavelength information, luminescence lifetime information, and intensity information. In some embodiments, the information comprises at least three, four, and/or five members selected from the group comprising wavelength information, luminescence lifetime information, intensity information, pulse duration information, and interpulse duration information. In some embodiments, the information obtained may be used to identify the sample.

    SENSOR FOR LIFETIME PLUS SPECTRAL CHARACTERIZATION
    6.
    发明公开
    SENSOR FOR LIFETIME PLUS SPECTRAL CHARACTERIZATION 审中-公开

    公开(公告)号：US20240353326A1

    公开(公告)日：2024-10-24

    申请号：US18539068

    申请日：2023-12-13

    申请人： Quantum-Si Incorporated

    发明人： Gerard Schmid ,  Dajiang Yang ,  Eric A.G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston

    IPC分类号： G01N21/64

    CPC分类号： G01N21/6428 ,  G01N2021/6417 ,  G01N2021/6439

    摘要： Some aspects relate to integrated devices for obtaining timing and/or spectral information from incident light. In some embodiments, a pixel may include one or more charge storage regions configured to receive charge carriers generated responsive to incident photons from a light source, with charge carriers stored in the charge storage region(s) indicative of spectral and timing information. In some embodiments, a pixel may include regions having different depths, each configured to generate charge carriers responsive to incident photons. In some embodiments, a pixel may include multiple charge storage regions having different depths, and one or more of the charge storage regions may be configured to receive the incident photons and generate charge carriers therein. In some embodiments, a pixel may include an optical sorting element configured to direct at least some incident photons to one charge storage region and other incident photons to another charge storage region.

    Integrated sensor for lifetime characterization
    9.
    发明授权
    Integrated sensor for lifetime characterization 有权

    公开(公告)号：US11869917B2

    公开(公告)日：2024-01-09

    申请号：US17149574

    申请日：2021-01-14

    申请人： Quantum-Si Incorporated

    发明人： Eric A. G. Webster ,  Changhoon Choi ,  Dajiang Yang ,  Xin Wang ,  Todd Rearick ,  Kyle Preston ,  Ali Kabiri ,  Gerard Schmid

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14683

    摘要： Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

    Optical and electrical secondary path rejection
    10.
    发明授权
    Optical and electrical secondary path rejection 有权

    公开(公告)号：US11804499B2

    公开(公告)日：2023-10-31

    申请号：US16913688

    申请日：2020-06-26

    申请人： Quantum-Si Incorporated

    发明人： Dajiang Yang ,  Farshid Ghasemi ,  Keith G. Fife ,  Todd Rearick ,  Ali Kabiri ,  Gerard Schmid ,  Eric A. G. Webster

    IPC分类号： H01L27/146 ,  H04N25/771

    CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H04N25/771

    摘要： Described herein are techniques to reduce or remove the impact of secondary path photons and/or charge carriers on storage bins of an integrated device to improve noise performance, and thus, sample analysis. Some embodiments relate to optical rejection techniques such as including an optical barrier positioned to block at least some photons from reaching the storage bins. Some embodiments relate to electrical rejection techniques such as including an electrical barrier configured to block at least some charge carriers from reaching the storage bins along at least one secondary path. Some embodiments relate to an integrated device in which at least one storage bin is shaped and/or positioned relative to the photodetector to facilitate receipt of some charge carriers (e.g., fluorescent emission charge carriers) and/or photons and to impede receipt of other charge carriers (e.g., noise charge carriers) and/or photons.