公开(公告)号：US20160187433A1

公开(公告)日：2016-06-30

申请号：US14965312

申请日：2015-12-10

申请人： ROHM CO., LTD.

发明人： Isamu NISHIMURA ,  Yasuhiro FUWA

IPC分类号： G01R33/06 ,  G01R33/00

CPC分类号： G01R33/063 ,  G01R33/0052 ,  G01R33/0354

摘要： Provided is a magnetism detection device by which it is possible to achieve a reduction in size and an increase in accuracy. A magnetism detection device includes: a magneto-impedance element; a magnetic field direction changing body; and a substrate that is formed of a semiconductor material and has an element arrangement recessed portion bottom surface and a back surface that face mutually opposite sides in a thickness direction, and a through-hole that reaches the element arrangement recessed portion bottom surface and the back surface and has a cross-sectional dimension that increases toward the main surface starting from the element arrangement recessed portion bottom surface. The magneto-impedance element is mounted on the element arrangement recessed portion bottom surface, and the magnetic field direction changing body is accommodated in the through-hole.

摘要翻译： 提供一种能够实现尺寸减小和精度提高的磁检测装置。 磁检测装置包括：磁阻元件; 磁场方向变换体; 以及由半导体材料形成的基板，具有在厚度方向上彼此相对的两侧面的元件排列凹部底面和背面，以及到达元件排列凹部底面和背面的贯通孔 并且具有从元件布置凹部底面开始朝向主表面增大的横截面尺寸。 磁阻抗元件安装在元件布置凹部底面上，磁场方向改变体容纳在通孔中。

公开(公告)号：US20150137314A1

公开(公告)日：2015-05-21

申请号：US14537234

申请日：2014-11-10

申请人： ROHM CO., LTD.

发明人： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC分类号： H01L49/02 ,  H01L23/552 ,  H01F27/28 ,  H01L23/31

CPC分类号： H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

摘要： The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

摘要翻译： 本发明的半导体器件包括绝缘层，高压线圈和低压线圈，其在垂直方向上以间隔设置在绝缘层中;低电位部分设置在设置在低电压区域周围的低电压区域 高压线圈的平面图的高电压区域，并且与低于高压线圈的电位相连接;以及电场屏蔽部，其设置在高电压线圈与低电压区域之间，并且具有电浮极金属部件 。

公开(公告)号：US20140299990A1

公开(公告)日：2014-10-09

申请号：US14243245

申请日：2014-04-02

申请人： ROHM CO., LTD.

发明人： Satoshi KAGEYAMA ,  Isamu NISHIMURA

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/0382 ,  H01L2224/03906 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2924/181 ,  H01L2924/01204 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The semiconductor device of the present invention includes an insulating layer, a copper wiring for wire connection formed on the insulating layer, a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper, a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface for a wire, and a side protecting layer covering a side surface of the copper wiring, wherein the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer.

摘要翻译： 本发明的半导体器件包括绝缘层，形成在绝缘层上的用于电线连接的铜布线，形成在铜布线的上表面上的减震层，该冲击吸收层由金属材料制成，具有 形成在冲击吸收层上的接合层，具有线的连接面的接合层和覆盖铜布的侧面的侧保护层，其中侧保护层的厚度比 从铜布线的上表面到接合层的连接表面的距离。