公开(公告)号：US07104869B2

公开(公告)日：2006-09-12

申请号：US10187857

申请日：2002-06-27

申请人： Stan Tsai ,  Rashid Mavliev ,  Lizhong Sun ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Ratson Morad

发明人： Stan Tsai ,  Rashid Mavliev ,  Lizhong Sun ,  Feng Q. Liu ,  Liang-Yuh Chen ,  Ratson Morad

IPC分类号： B24B1/00 ,  H01L21/47

CPC分类号： B24B37/0056 ,  B24B37/044 ,  B24B49/006 ,  B24B49/16 ,  C09G1/02 ,  H01L21/3212

摘要： The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

公开(公告)号：US06863797B2

公开(公告)日：2005-03-08

申请号：US10141459

申请日：2002-05-07

申请人： Lizhong Sun ,  Feng Q. Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

发明人： Lizhong Sun ,  Feng Q. Liu ,  Siew Neo ,  Stan Tsai ,  Liang-Yuh Chen

IPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C09G1/04 ,  C25F3/02 ,  H01L21/321 ,  H01L21/3213 ,  C25F3/00 ,  C09K13/00

CPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

摘要： Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.

摘要翻译： 提供了电解质组合物和使用电解质组合物平坦化基材表面的方法。 一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种pH调节剂。 另一方面，电解质组合物包括一种或多种螯合剂，两种或更多种腐蚀抑制剂和一种或多种pH调节剂。 另一方面，电解质组合物包括一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种pH调节剂和一种或多种电阻添加剂。

公开(公告)号：US20090036032A1

公开(公告)日：2009-02-05

申请号：US12248414

申请日：2008-10-09

申请人： Yongqi Hu ,  Paul D. Butterfield ,  Junzi Zhao ,  Stan D. Tsai ,  Feng Q. Liu

发明人： Yongqi Hu ,  Paul D. Butterfield ,  Junzi Zhao ,  Stan D. Tsai ,  Feng Q. Liu

IPC分类号： B24B1/00

CPC分类号： B23H5/08 ,  B24B37/015 ,  B24B37/046 ,  B24B37/12 ,  B24B49/14 ,  C25D7/00

摘要： Methods for polishing a substrate are provided. In one embodiment, the method includes pressing a substrate against a pad assembly disposed on rotating platen assembly, the pad assembly comprising an electrode coupled to a power source, flowing an electrolyte fluid onto the pad assembly, wherein the electrolyte fluid is in contact with the substrate and the electrode, creating an electrical bias between the electrode and the substrate, and heating the electrolyte fluid with an infrared lamp to a temperature of at least 10 degrees Celsius above room temperature.

摘要翻译： 提供了抛光基板的方法。 在一个实施例中，该方法包括将基板压靠在设置在旋转台板组件上的焊盘组件上，该焊盘组件包括耦合到电源的电极，将电解液流动到焊盘组件上，其中电解质流体与 衬底和电极，在电极和衬底之间产生电偏压，并用红外灯将电解质液体加热到高于室温的至少10摄氏度的温度。

公开(公告)号：US08586481B2

公开(公告)日：2013-11-19

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US20120064801A1

公开(公告)日：2012-03-15

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20110294293A1

公开(公告)日：2011-12-01

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US20080277787A1

公开(公告)日：2008-11-13

申请号：US11746135

申请日：2007-05-09

申请人： Feng Q. Liu ,  Alain Duboust ,  Yan Wang ,  Wei-Yung Hsu ,  Tianbo Du

发明人： Feng Q. Liu ,  Alain Duboust ,  Yan Wang ,  Wei-Yung Hsu ,  Tianbo Du

IPC分类号： H01L23/485 ,  H01L21/4763

CPC分类号： B23H5/08 ,  H01L21/32125

摘要： A method and apparatus for processing barrier and metals disposed on a substrate in an electrochemical mechanical planarizing system are provided. In certain embodiments a method for electroprocessing a substrate is provided. The method comprises contacting the substrate with the non-conductive surface of a polishing pad assembly, establishing a first electrically conductive path through an electrolyte between an exposed layer of barrier material and a first electrode, establishing a second electrically conductive path through the electrolyte between the exposed layer of barrier material and a second electrode, applying a voltage to the first electrode to cause a voltage drop between the substrate and the second electrode, and removing the barrier material from the substrate.

摘要翻译： 提供了一种用于在电化学机械平面化系统中处理设置在基板上的屏障和金属的方法和装置。 在某些实施例中，提供了一种用于对基底进行电处理的方法。 该方法包括使衬底与抛光垫组件的非导电表面接触，建立穿过暴露的阻挡材料层和第一电极之间的电解质的第一导电路径，建立通过电解质之间的第二导电路径 暴露的阻挡材料层和第二电极，向第一电极施加电压以在衬底和第二电极之间引起电压降，以及从衬底去除阻挡材料。

公开(公告)号：US20100130013A1

公开(公告)日：2010-05-27

申请号：US12622251

申请日：2009-11-19

申请人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

发明人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

IPC分类号： H01L21/306 ,  H01L21/304 ,  C09K13/06 ,  C11D3/20

CPC分类号： C11D3/3947 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

摘要翻译： 一种用于在衬底表面上抛光相变合金的CMP方法，包括将包含相变合金材料的衬底定位在包含抛光垫的压板上并将抛光浆料输送到抛光垫。 抛光浆料包括粒度小于60nm的胶体颗粒，其浆料重量为0.2％至约10％，pH调节剂，螯合剂，小于1重量％的氧化剂 的浆料和聚丙烯酸。 抛光台板上的基板以除去一部分相变合金。 用于冲洗台板上的基材的冲洗溶液包括去离子水和去离子水中的至少一种组分，其中选自聚乙烯亚胺，聚乙二醇，聚丙烯酰胺，醇乙氧基化物，聚丙烯酸，含唑化合物 ，苯并三唑及其组合。

公开(公告)号：US07390429B2

公开(公告)日：2008-06-24

申请号：US11312823

申请日：2005-12-19

申请人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

发明人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/06

CPC分类号： H01L21/32125 ,  B23H5/08 ,  C25F3/02 ,  H01L21/7684

摘要： A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.

摘要翻译： 提供一种处理其上设置有导电材料层的基板的方法，其包括将基板定位在处理装置中并将第一抛光组合物提供到基板之间。 抛光组合物包括第一螯合剂，第二螯合剂，第一腐蚀抑制剂，第二腐蚀抑制剂，抑制剂，溶剂和无机酸基电解质，以提供约3至约10的pH。

公开(公告)号：US09073169B2

公开(公告)日：2015-07-07

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  G01B11/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。