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50 条记录 (耗时 0.03 秒)

    Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer
    33.
    发明授权
    Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer 失效
    含有钛和钨合金间隔层的磁阻读取传感器

    公开(公告)号：US5258884A

    公开(公告)日：1993-11-02

    申请号：US779419

    申请日：1991-10-17

    申请人： James K. Howard ,  Cherngye Hwang

    发明人： James K. Howard ,  Cherngye Hwang

    IPC分类号： G11B5/39

    CPC分类号： G11B5/399

    摘要： A magnetoresistive (MR) read transducer has a thin film MR layer of ferromagnetic material and a nonmagnetic spacer layer in contact with the MR layer. The thin film spacer layer comprises an alloy of titanium (Ti) and tungsten (W) having a high resistivity. A thin film of soft magnetic material is deposited in contact with the nonmagnetic spacer layer so that the soft magnetic material is positioned parallel to, but spaced from, the MR layer. A feature of the invention is that the resistivity of the nonmagnetic spacer layer can be a specific value selected from a broad range of resistivity values by selecting the thickness, the Ti content, and/or the nitrogen content of the nonmagnetic spacer layer.

    摘要翻译： 磁阻（MR）读取传感器具有铁磁材料的薄膜MR层和与MR层接触的非磁性间隔层。 薄膜间隔层包括具有高电阻率的钛（Ti）和钨（W）的合金。 沉积与非磁性间隔层接触的软磁性材料的薄膜，使得软磁性材料平行于MR层定位。 本发明的特征在于，通过选择非磁性间隔层的厚度，Ti含量和/或氮含量，非磁性间隔层的电阻率可以是从广泛的电阻率值中选择的特定值。

    Thin film capacitor with a dual bottom electrode structure
    35.
    发明授权
    Thin film capacitor with a dual bottom electrode structure 失效
    具有双底电极结构的薄膜电容器

    公开(公告)号：US4471405A

    公开(公告)日：1984-09-11

    申请号：US538618

    申请日：1983-10-03

    申请人： James K. Howard ,  Kris V. Srikrishnan

    发明人： James K. Howard ,  Kris V. Srikrishnan

    IPC分类号： H01G4/008 ,  H01G4/08 ,  H01G1/01 ,  B05D5/12 ,  H01L29/78

    CPC分类号： H01G4/008 ,  H01G4/08

    摘要： A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

    摘要翻译： 提供具有双底电极的薄膜电容器。 底部电极包括第一金属层和第二层铂，第一层的金属具有在热处理期间与铂形成稳定的金属间相的特性。 第一层金属可以选自Hf，Zr和Ta。 薄膜电容器可以用作VLSI器件中的去耦电容器。

    Magnetoresistive sensor having antiferromagnetic exchange bias
    39.
    发明授权
    Magnetoresistive sensor having antiferromagnetic exchange bias 失效
    具有反铁磁交换偏置的磁阻传感器

    公开(公告)号：US5436778A

    公开(公告)日：1995-07-25

    申请号：US213882

    申请日：1994-03-15

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetic disk storage system wherein a magnetic includes a magnetoresistive sensor is described. The MR sensor comprises a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer has a face-centered-cubic crystalline structure and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer crystalline structure is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁盘存储系统，其中磁换能器包括磁阻传感器。 MR传感器包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层具有面心立方晶体结构，并且表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层晶体结构是面心四面体并且显示出增加的晶体顺序，并且为MR元件提供足够的交换耦合以进行操作。 向Ni-Mn合金中添加铬提高了耐腐蚀性。

    Method for fabricating a magnetoresistive sensor having antiferromagnetic layer
    40.
    发明授权
    Method for fabricating a magnetoresistive sensor having antiferromagnetic layer 失效
    制造具有反铁磁层的磁阻传感器的方法

    公开(公告)号：US5380548A

    公开(公告)日：1995-01-10

    申请号：US213883

    申请日：1994-03-15

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39 ,  H01F10/02

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。