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69 条记录 (耗时 0.049 秒)

    Substrate comprising a mark
    31.
    发明授权
    Substrate comprising a mark 有权
    基材包括标记

    公开(公告)号：US08722179B2

    公开(公告)日：2014-05-13

    申请号：US11637215

    申请日：2006-12-12

    申请人： Richard Johannes Franciscus Van Haren ,  Bartolomeus Petrus Rijpers ,  Harminder Singh ,  Gerald Arthur Finken

    发明人： Richard Johannes Franciscus Van Haren ,  Bartolomeus Petrus Rijpers ,  Harminder Singh ,  Gerald Arthur Finken

    IPC分类号： B32B7/02 ,  H01L23/544

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/31504

    摘要： A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one further region formed by a second material. The first and second materials have different material characteristics with respect to a chemical-mechanical polishing process such that a step height in a direction substantially perpendicular to the surface of the substrate may be created by applying the chemical-mechanical polishing process. The second mark can be provided with a second step height by applying the chemical-mechanical polishing process. The second step height is substantially different from the first step height.

    摘要翻译： 衬底包括第一标记和第二标记。 第一标记包括具有由第一材料形成的至少一个标记特征的第一图案和由第二材料形成的至少一个另外的区域。 第一和第二材料相对于化学机械抛光工艺具有不同的材料特性，使得通过施加化学机械抛光工艺可以产生基本上垂直于衬底表面的方向上的台阶高度。 通过施加化学机械抛光工艺，第二标记可以提供第二级高度。 第二步高度与第一台阶高度大不相同。

    Sub-segmented alignment mark arrangement
    33.
    发明授权
    Sub-segmented alignment mark arrangement 有权
    分段对准标记布置

    公开(公告)号：US08203692B2

    公开(公告)日：2012-06-19

    申请号：US12482770

    申请日：2009-06-11

    申请人： Sami Musa ,  Richard Johannes Franciscus Van Haren ,  Sanjaysingh Lalbahadoersing

    发明人： Sami Musa ,  Richard Johannes Franciscus Van Haren ,  Sanjaysingh Lalbahadoersing

    IPC分类号： G03B27/68 ,  G03B27/42

    CPC分类号： G03B27/54 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.

    摘要翻译： 衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。 元件沿第一方向以交替的重复序列排列。 周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。 每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。 用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。 总间距大于波长λ，第一和第二子间距都小于波长。

    Binary sinusoidal sub-wavelength gratings as alignment marks
    35.
    发明授权
    Binary sinusoidal sub-wavelength gratings as alignment marks 有权
    二进正弦亚波长光栅作为对准标记

    公开(公告)号：US07863763B2

    公开(公告)日：2011-01-04

    申请号：US11284407

    申请日：2005-11-22

    申请人： Richard Johannes Franciscus Van Haren ,  Sami Musa

    发明人： Richard Johannes Franciscus Van Haren ,  Sami Musa

    IPC分类号： H01L23/544

    CPC分类号： G03F9/7049 ,  G03F9/7076 ,  G03F9/7088

    摘要： The present invention relates to alignment marks for use on substrates, the alignment marks consisting of periodic 2-dimensional arrays of structures, the spacing of the structures being smaller than an alignment beam but larger than an exposure beam and the width of the structures varying sinusoidally from one end of an array to the other.

    摘要翻译： 本发明涉及在基板上使用的对准标记，对准标记由周期性二维结构阵列组成，其结构的间距小于对准光束但大于曝光光束，并且结构的宽度正弦变化 从阵列的一端到另一端。

    Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus
    37.
    发明授权
    Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效
    用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记

    公开(公告)号：US07453161B2

    公开(公告)日：2008-11-18

    申请号：US11889517

    申请日：2007-08-14

    申请人： Richard Johannes Franciscus Van Haren ,  Sanjaysingh Lalbahadoersing ,  Henry Megens

    发明人： Richard Johannes Franciscus Van Haren ,  Sanjaysingh Lalbahadoersing ,  Henry Megens

    IPC分类号： H01L23/544

    CPC分类号： H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.

    摘要翻译： 用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。 在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。 将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级 不同于第一子集的标记结构的表面部分的水平。

    Substrate comprising a mark
    39.
    发明授权
    Substrate comprising a mark 失效
    基材包括标记

    公开(公告)号：US08609441B2

    公开(公告)日：2013-12-17

    申请号：US12000452

    申请日：2007-12-12

    申请人： Richard Johannes Franciscus Van Haren ,  Bartolomeus Petrus Rijpers ,  Harminder Singh ,  Gerald Arthur Finken

    发明人： Richard Johannes Franciscus Van Haren ,  Bartolomeus Petrus Rijpers ,  Harminder Singh ,  Gerald Arthur Finken

    IPC分类号： H01L21/304 ,  H01L21/66 ,  H01L23/544

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one region formed by a second material. The first and second materials have different material characteristics with respect to a substrate treatment process such that a step height in a direction substantially perpendicular to the surface of the substrate may be created by applying the substrate treatment process. The second mark can be provided with a second step height by applying the substrate treatment process. The second step height is substantially different from the first step height.

    摘要翻译： 衬底包括第一标记和第二标记。 第一标记包括具有由第一材料形成的至少一个标记特征的第一图案和由第二材料形成的至少一个区域。 第一和第二材料相对于基板处理工艺具有不同的材料特性，使得通过施加基板处理工艺可以产生基本上垂直于基板表面的方向上的台阶高度。 通过施加基板处理工艺，第二标记可以设置第二台阶高度。 第二步高度与第一台阶高度大不相同。