公开(公告)号：US07825042B2

公开(公告)日：2010-11-02

申请号：US12634873

申请日：2009-12-10

申请人： Robert P. Mandal

发明人： Robert P. Mandal

IPC分类号： H01L21/3105

CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

摘要翻译： 本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它 气相等离子体增强反应中活性氧的来源。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

公开(公告)号：US07633163B2

公开(公告)日：2009-12-15

申请号：US11424790

申请日：2006-06-16

申请人： Robert P. Mandal

发明人： Robert P. Mandal

IPC分类号： H01L23/48

CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

公开(公告)号：US07205224B2

公开(公告)日：2007-04-17

申请号：US10404830

申请日：2003-04-01

申请人： Robert P. Mandal

发明人： Robert P. Mandal

IPC分类号： H01L21/4763

CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

摘要翻译： 本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它 气相等离子体增强反应中活性氧的来源。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

公开(公告)号：US07012030B2

公开(公告)日：2006-03-14

申请号：US10882780

申请日：2004-06-30

申请人： Robert P. Mandal

发明人： Robert P. Mandal

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

公开(公告)号：US06890639B2

公开(公告)日：2005-05-10

申请号：US10091699

申请日：2002-03-04

申请人： Robert P. Mandal

发明人： Robert P. Mandal

IPC分类号： H01L21/768 ,  C23C16/40 ,  C23C16/56 ,  H01L21/205 ,  H01L21/316 ,  H01L23/522 ,  B32B3/26 ,  H01L21/302

CPC分类号： C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

摘要翻译： 本发明提供了一种通过在气相等离子体增强反应中使包含可氧化硅组分和具有热不稳定基团的可氧化组分的混合物与氧化气体反应来沉积纳米多孔低介电常数薄膜的方法。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。

公开(公告)号：US06562690B1

公开(公告)日：2003-05-13

申请号：US09594186

申请日：2000-06-13

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2176

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平 在占用周期的10％到30％的范围内达到约250W。

公开(公告)号：US06171945B2

公开(公告)日：2001-01-09

申请号：US09177044

申请日：1998-10-22

申请人： Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

发明人： Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

摘要： A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

摘要翻译： 一种用于通过含硅氢化物的化合物或任选地具有热不稳定性有机基团的混合物与基质表面上的过氧化物化合物反应沉积纳米多孔低介电常数膜的方法和装置。 将沉积的氧化硅基膜退火以形成留在具有泡沫结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间填充间隙。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过1,3,5-三硅烷环己烷，双（甲酰氧基甲硅烷基）甲烷或双（乙酰氧基二硅烷基）甲烷和过氧化氢的反应制备的，然后进行包括逐渐升高的固化/退火。