公开(公告)号：US5848012A

公开(公告)日：1998-12-08

申请号：US841139

申请日：1997-04-24

申请人： Masaki Tsukude ,  Takahiro Tsuruda

发明人： Masaki Tsukude ,  Takahiro Tsuruda

IPC分类号： G11C11/409 ,  G11C7/12 ,  G11C7/18 ,  G11C11/401 ,  G11C11/4094 ,  G11C11/4097 ,  G11C5/02 ,  G11C5/06

CPC分类号： G11C11/4097 ,  G11C11/4094 ,  G11C7/12 ,  G11C7/18

摘要： A semiconductor memory device comprises a main bit line pair, a plurality of subbit line pairs, a plurality of selection transistor pairs, a plurality of word lines, a plurality of memory cells, and a plurality of first precharging circuits. The subbit line pairs are provided in correspondence to the main bit line pair. One and other subbit lines of the subbit line pairs are arranged in straight lines along the main bit line pair. The selection transistors are provided in correspondence to the subbit line pairs. Each of the selection transistor pairs is connected between the main bit line pair and the corresponding subbit line pair, and turned on in response to a prescribed selection signal. The word lines are arranged to intersect with one and the other subbit lines of the subbit line pairs. The memory cells are provided in correspondence to intersection points between one and the other subbit lines of the subbit line pairs and the word lines. Each of the memory cells is connected to the corresponding subbit line and the corresponding word line. The first precharging circuits are provided in correspondence to the subbit line pairs. Each of the first precharging circuits directly precharges the corresponding subbit line pair at the prescribed precharging potential.

摘要翻译： 半导体存储器件包括主位线对，多个子行对，多个选择晶体管对，多个字线，多个存储单元和多个第一预充电电路。 对应于主位线对提供子行对。 子列线对中的一个和其它子条线沿着主位线对排列成直线。 选择晶体管对应于子线对设置。 每个选择晶体管对连接在主位线对和对应的子行对之间，并响应于规定的选择信号而导通。 字线布置成与子线对的一个和另一个子行线相交。 存储单元对应于子行对和字线的一个和另一个子行之间的交点。 每个存储单元连接到相应的子行和相应的字线。 第一预充电电路对应于子线对设置。 每个第一预充电电路以预定的预充电电压直接对相应的子
线对进行预充电。

公开(公告)号：US5838627A

公开(公告)日：1998-11-17

申请号：US768090

申请日：1996-12-16

申请人： Shigeki Tomishima ,  Mikio Asakura ,  Masaki Tsukude ,  Kazutami Arimoto

发明人： Shigeki Tomishima ,  Mikio Asakura ,  Masaki Tsukude ,  Kazutami Arimoto

IPC分类号： G11C5/02 ,  G11C5/06 ,  G11C5/14 ,  G11C7/10 ,  G11C29/26 ,  G11C29/34 ,  G11C8/00 ,  G11C7/00

CPC分类号： G11C5/14 ,  G11C29/26 ,  G11C29/34 ,  G11C5/025 ,  G11C5/063 ,  G11C7/10

摘要： Data input/output pad portions are arranged corresponding to memory blocks and adjacent to a corresponding memory block in the center region between memory blocks, and memory blocks. Power supply pads are arranged at both ends of the center region. Power supply pad transmits a power supply voltage to data input/output pad portions, and power supply pad transmits the power supply voltage to data input/output pad portions. Power supply pad for peripheral circuitry is arranged in the center portion of the center region. A multibit test circuit is provided for each memory block. A data input/output buffer operating stably at high speed is implemented in a large storage capacity memory device which in turn accommodates a multibit test mode.

摘要翻译： 数据输入/输出焊盘部分对应于存储块并且与存储块和存储块之间的中心区域中相应的存储块相邻布置。 电源垫布置在中心区域的两端。 电源板将电源电压发送到数据输入/输出焊盘部分，电源焊盘将电源电压发送到数据输入/输出焊盘部分。 用于外围电路的电源板布置在中心区域的中心部分。 为每个存储块提供多位测试电路。 在大容量存储装置中实现高速稳定运行的数据输入/输出缓冲器，其又适应多位测试模式。

公开(公告)号：US5831924A

公开(公告)日：1998-11-03

申请号：US711331

申请日：1996-09-06

申请人： Yasuhiko Nitta ,  Masaki Tsukude

发明人： Yasuhiko Nitta ,  Masaki Tsukude

IPC分类号： G11C11/413 ,  G11C7/18 ,  G11C8/14 ,  G11C11/401 ,  G11C11/407 ,  G11C11/409 ,  G11C8/00

CPC分类号： G11C8/14 ,  G11C7/18

摘要： One memory array is divided into a plurality of banks sharing a row of memory cells. Global IO buses are disposed for memory column blocks forming the plurality of banks included in one memory array. The global IO buses are selectively and electrically connected to the same data input/output terminal.

摘要翻译： 一个存储器阵列被分成共享一行存储器单元的多个存储体。 全局IO总线被布置用于形成包括在一个存储器阵列中的多个存储体的存储器列块。 全局IO总线选择性地电连接到相同的数据输入/输出端子。

公开(公告)号：US5831921A

公开(公告)日：1998-11-03

申请号：US895064

申请日：1997-07-16

申请人： Masaki Tsukude

发明人： Masaki Tsukude

IPC分类号： G11C11/403 ,  G11C11/401 ,  G11C11/406 ,  G11C11/407 ,  G11C11/408 ,  G11C11/409 ,  G11C7/00

CPC分类号： G11C11/406 ,  G11C11/408

摘要： In a DRAM, an upper address is assigned to each of ways W0 and W1, and a lower address is assigned to each word line WL in each of ways W0 and W1. A self-refresh start trigger generating circuit senses start of self-refresh, and a refresh address change sensing circuit senses change in an upper address. Based on the result of sensing, way selection signals RX0 and RX1 will not be reset and held at an active level while ways W0 and W1 are selected, respectively. Consequently, power consumption can be reduced compared to a conventional example in which signals RX0 and RX1 are reset every time a single word line WL is selected.

摘要翻译： 在DRAM中，向W0和W1的每一种分配上部地址，并且以W0和W1的方式将每个字线WL分配较低的地址。 自刷新开始触发发生电路感测自刷新的开始，刷新地址变化感测电路感测到上部地址的变化。 基于感测的结果，方式选择信号RX0和RX1将不会被复位并保持在有效电平，而W0和W1分别被选择。 因此，与每当选择单个字线WL时信号RX0和RX1被复位的常规示例相比，能够降低功耗。

公开(公告)号：US5815428A

公开(公告)日：1998-09-29

申请号：US893045

申请日：1997-07-14

申请人： Takahiro Tsuruda ,  Masaki Tsukude

发明人： Takahiro Tsuruda ,  Masaki Tsukude

IPC分类号： G11C11/401 ,  G11C7/18 ,  G11C11/34 ,  G11C11/4097 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G11C5/06

CPC分类号： G11C7/18 ,  G11C11/4097 ,  H01L27/10805

摘要： A semiconductor memory device includes a semiconductor substrate, a plurality of sub bit line pairs formed on the semiconductor substrate, a main bit line pair formed at a layer above the plurality of sub bit line pairs, a plurality of selecting transistors, a plurality of word lines located to cross the sub bit line pairs, and a plurality of memory cells. Each selecting transistor is provided corresponding to one sub bit line and has one source/drain region connected to a corresponding sub bit line. At a layer above the other source/drain region of the selecting transistor, an intermediate layer is formed in the same layer as that of a storage node of memory cell. The intermediate layer is connected to the other source/drain region of the selecting transistor through a contact hole formed beneath it. The intermediate layer is further connected to the main bit line through another contact hole formed on the intermediate layer.

摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的多个子位线对，在多个子位线对之上形成的主位线对，多个选择晶体管，多个字 位于与子位线对交叉的线，以及多个存储单元。 每个选择晶体管对应于一个子位线提供，并且具有连接到相应的子位线的一个源极/漏极区域。 在选择晶体管的另一个源极/漏极区之上的层上，在与存储单元的存储节点相同的层中形成中间层。 中间层通过形成在其上的接触孔连接到选择晶体管的另一个源/漏区。 中间层通过形成在中间层上的另一个接触孔进一步连接到主位线。

公开(公告)号：US5682343A

公开(公告)日：1997-10-28

申请号：US664886

申请日：1996-06-17

申请人： Shigeki Tomishima ,  Masaki Tsukude ,  Mikio Asakura ,  Kazuyasu Fujishima

发明人： Shigeki Tomishima ,  Masaki Tsukude ,  Mikio Asakura ,  Kazuyasu Fujishima

IPC分类号： G11C11/401 ,  G11C7/18 ,  G11C11/4096 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G11C5/06

CPC分类号： G11C7/18 ,  G11C11/4096

摘要： Main bit lines MBL and ZMBL are disposed at opposite sides of a sense amplifier SA. Main bit lines MBL and ZMBL each are provided for paired sub-bit lines SBL1 and SBL2 (or SBL3 and SBL4). Sub-bit line pair SBL1 and SBL2 is connected to main bit line MBL via a block select switch T1. Sub-bit line pair SBL3 and SBL4 is connected to main bit line ZMBL via a block select switch T2. Since one main bit line is provided for two sub-bit lines, a pitch of the main bit lines is twice as large as a pitch of the sub-bit lines, so that conditions on the pitch of main bit lines are remarkably eased, which facilitates layout of elements.

摘要翻译： 主位线MBL和ZMBL设置在读出放大器SA的相对侧。 为配对的子位线SBL1和SBL2（或SBL3和SBL4）提供主位线MBL和ZMBL。 子位线对SBL1和SBL2经由块选择开关T1连接到主位线MBL。 子位线对SBL3和SBL4通过块选择开关T2连接到主位线ZMBL。 由于为两个子位线提供一个主位线，所以主位线的间距是子位线的间距的两倍，使得主位线的间距条件显着地减轻，其中 促进元素布局。

公开(公告)号：US5646900A

公开(公告)日：1997-07-08

申请号：US583893

申请日：1996-01-11

申请人： Masaki Tsukude ,  Kazutami Arimoto

发明人： Masaki Tsukude ,  Kazutami Arimoto

IPC分类号： G11C11/409 ,  G11C5/14 ,  G11C7/06 ,  G11C11/407 ,  G11C11/408 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/419

CPC分类号： G11C7/065 ,  G11C5/146

摘要： N channel sense amplifier transistors have their backgate potentials set to a backgate precharge potential higher than a potential intermediate between an operation power supply potential and a ground potential prior to start of sensing operation, and then lowered following the lowering of an n common source node potential during the sensing operation. The n common source node is precharged to the intermediate potential. The backgate precharge potential is set no greater than a potential of the intermediate potential plus a pn junction diffusion, to suppress a leakage current from the backgate to source or drain of each of the sense amplifier transistors. P channel sense amplifier transistors have also their backgate potential set to a precharge potential lower than the intermediate potential prior to sensing operation and raised following the rise of a p common source node potential.

摘要翻译： N沟道读出放大器晶体管的背栅电位被设置为比开始感测操作之前的工作电源电位和地电位之间的电位中间高的后栅极预充电电位，然后在n个共同源节点电位降低之后降低 在感测操作期间。 n个公共源节点被预充电到中间电位。 背栅预充电电位被设定为不大于中间电位加上pn结扩散的电位，以抑制从每个读出放大器晶体管的背栅到源极或漏极的漏电流。 P沟道读出放大器晶体管在其感测操作之前也将其背栅电位设置为低于中间电位的预充电电位，并且随着p共同源节点电位的上升而升高。

公开(公告)号：US5610533A

公开(公告)日：1997-03-11

申请号：US350064

申请日：1994-11-29

申请人： Kazutami Arimoto ,  Masaki Tsukude

发明人： Kazutami Arimoto ,  Masaki Tsukude

IPC分类号： H01L27/02 ,  H01L27/12 ,  H03K19/00 ,  H03K17/16

CPC分类号： H01L27/1203 ,  H01L27/0218 ,  H03K19/0016 ,  H03K2217/0018

摘要： A semiconductor circuit or a MOS-DRAM wherein converting means is provided that converts substrate potential or body bias potential between two values for MOS-FETs in a logic circuit, memory cells, and operating circuit of the MOS-DRAM, thereby raising the threshold voltage of the MOS-FETs when in the standby state and lowering it when in active state. The converting means includes a level shift circuit and a switch circuit. The substrate potential or body bias potential is controlled only of the MOS-FETs which are nonconducting in the standby state; this configuration achieves a reduction in power consumption associated with the potential switching. Furthermore, in a structure where MOS-FETs of the same conductivity type are formed adjacent to each other, MOS-FETs of SOI structure are preferable for better results.

摘要翻译： 一种半导体电路或MOS-DRAM，其中提供了转换装置，其将MOS-FET的逻辑电路，存储单元和工作电路中的MOS-FET的两个值之间的衬底电位或体偏置电位转换，从而提高阈值电压 的MOS-FET在处于待机状态时，并且在处于活动状态时将其降低。 转换装置包括电平移位电路和开关电路。 衬底电位或体偏置电位仅受待机状态下不导通的MOS-FET的控制; 该配置实现了与潜在切换相关联的功耗的降低。 此外，在相邻形成相同导电类型的MOS-FET的结构中，为了更好的结果，优选SOI结构的MOS-FET。

公开(公告)号：US5315548A

公开(公告)日：1994-05-24

申请号：US900368

申请日：1992-06-18

申请人： Tsukasa Ooishi ,  Kazutami Arimoto ,  Hideto Hidaka ,  Masanori Hayashikoshi ,  Shinji Kawai ,  Mikio Asakura ,  Masaki Tsukude ,  Katsuhiro Suma ,  Shigeki Tomishima ,  Kazuyasu Fujishima

发明人： Tsukasa Ooishi ,  Kazutami Arimoto ,  Hideto Hidaka ,  Masanori Hayashikoshi ,  Shinji Kawai ,  Mikio Asakura ,  Masaki Tsukude ,  Katsuhiro Suma ,  Shigeki Tomishima ,  Kazuyasu Fujishima

IPC分类号： G11C11/407 ,  G11C7/10 ,  G11C8/12 ,  G11C11/401 ,  G11C11/41 ,  H01L21/8242 ,  H01L27/108 ,  G11C8/00 ,  G11C7/00

CPC分类号： G11C8/12 ,  G11C7/10

摘要： Column address A0-A11 is once predecoded by a first predecoder PD1, a second predecoder PD2, and a CDE buffer CDB and then applied to a column decoder CD. Column decoder CD selectively drives one of a plurality of column selecting lines CSL on the basis of the applied predecoded signals. This causes corresponding bit lines in respective memory cell arrays MCA1-MCA4 to be simultaneously selected. Column decoder CD includes a plurality of column drivers corresponding to the plurality of column selecting lines, and the column drivers are divided into a plurality of groups. The predecoded signals applied from second predecoder PD2 and CDE buffer CDB to column decoder CD are generated independently for respective groups, and signal lines for them are also distributed to respective groups. This causes the length of wiring of each predecoded signal line to be shortened.

摘要翻译： 列地址A0-A11由第一预解码器PD1，第二预解码器PD2和CDE缓冲器CDB预先解码，然后应用于列解码器CD。 列解码器CD基于所应用的预解码信号选择性地驱动多个列选择线CSL中的一个。 这使得相应的存储单元阵列MCA1-MCA4中的相应位线被同时选择。 列解码器CD包括对应于多个列选择线的多个列驱动器，列驱动器被分成多个组。 从第二预解码器PD2和CDE缓冲器CDB施加到列解码器CD的预解码信号针对各个组独立地生成，并且它们的信号线也被分配给各个组。 这导致每个预解码信号线的布线长度被缩短。

公开(公告)号：US08061895B2

公开(公告)日：2011-11-22

申请号：US12362495

申请日：2009-01-30

申请人： Masaki Tsukude

发明人： Masaki Tsukude

IPC分类号： G01K7/00 ,  G11C7/04 ,  H03K17/14

CPC分类号： G01K7/015 ,  G01K3/005

摘要： There is provided a semiconductor device which can maintain a high tuning accuracy while suppressing a cost increase and suppress an increase in the time required for tuning. There are included, in addition to variable resistors configuring a level shift circuit, an additional resistor coupled between the output node of a VBGR voltage of a BGR circuit and one of the variable resistors and an additional resistor coupled between the other of the variable resistors and a reference voltage. N-channel MOS transistors are coupled in parallel with the additional resistors, respectively.

摘要翻译： 提供一种能够在抑制成本增加的同时保持高调谐精度并抑制调谐所需时间的增加的半导体装置。 除了构成电平移位电路的可变电阻器之外，还包括耦合在BGR电路的VBGR电压的输出节点和可变电阻器之一的附加电阻器以及耦合在另一个可变电阻器之间的附加电阻器，以及 参考电压。 N沟道MOS晶体管分别与附加电阻并联耦合。