公开(公告)号：US20230072487A1

公开(公告)日：2023-03-09

申请号：US17676905

申请日：2022-02-22

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Hwa Sun LEE ,  Moon Chul LEE ,  Jeong Hoon RYOU ,  Tae Yoon KIM ,  Sang Kee YOON ,  Yong Suk KIM ,  Joung Hun KIM ,  Tae Kyung LEE ,  Jae Hyoung GIL

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.

公开(公告)号：US20220399874A1

公开(公告)日：2022-12-15

申请号：US17511696

申请日：2021-10-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sang Heon HAN ,  Hwa Sun LEE ,  Jae Goon AUM ,  Sung HAN

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02 ,  H03H3/02

Abstract: An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.

公开(公告)号：US20220140811A1

公开(公告)日：2022-05-05

申请号：US17220119

申请日：2021-04-01

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Dae Hun JEONG ,  Ran Hee SHIN ,  Jin Suk SON ,  Hwa Sun LEE ,  Jae Goon AUM

IPC: H03H9/17 ,  H03H9/02

Abstract: A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25

公开(公告)号：US20220116018A1

公开(公告)日：2022-04-14

申请号：US17233797

申请日：2021-04-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jang Ho PARK ,  Yoo Sam NA ,  Young Sik HUR ,  Seung Wook PARK ,  Hwa Sun LEE ,  Won Kyu JEUNG

IPC: H03H9/54 ,  H03H9/17 ,  H03H9/02

Abstract: A bulk-acoustic wave filter device includes: a substrate; a resonance portion in which a cavity is disposed between the substrate and the resonance portion; and a cap configured to form an internal space together with the substrate, wherein filling gas including at least one of hydrogen gas and helium gas is filled in at least one of the cavity and the internal space formed by the substrate and the cap.

公开(公告)号：US20200067483A1

公开(公告)日：2020-02-27

申请号：US16668118

申请日：2019-10-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Sung HAN ,  Yun Sung KANG ,  Sung Sun KIM ,  Jin Suk SON ,  Jeong Suong YANG ,  Hwa Sun LEE ,  Eun Tae PARK

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

公开(公告)号：US20180294792A1

公开(公告)日：2018-10-11

申请号：US15876791

申请日：2018-01-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul LEE ,  Tah Joon PARK ,  Jae Chang LEE ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Hwa Sun LEE ,  Tae Hun LEE ,  Hyun Min HWANG ,  Tae Kyung LEE

IPC: H03H9/02 ,  H03H9/60

Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

公开(公告)号：US20170237408A1

公开(公告)日：2017-08-17

申请号：US15271579

申请日：2016-09-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sung HAN ,  Dae Ho KIM ,  Ran Hee SHIN ,  Hwa Sun LEE ,  Chang Hyun LIM ,  Tae Kyung LEE ,  Sung Sun KIM

IPC: H03H9/17 ,  H03H9/54 ,  H03H3/02 ,  H03H9/13

CPC classification number: H03H9/17 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/173 ,  H03H9/54 ,  H03H2003/021

Abstract: A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.