公开(公告)号：US10343191B2

公开(公告)日：2019-07-09

申请号：US15302260

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Satoru Idojiri ,  Yoshiharu Hirakata ,  Kohei Yokoyama

IPC: B08B1/00 ,  H01L21/304 ,  H01L21/02 ,  H01L27/12 ,  B25J11/00 ,  B32B37/00 ,  B32B38/18 ,  H01L21/67 ,  H01L21/78 ,  B25J15/02 ,  B08B11/00

Abstract: An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant (30a). Characterized is a wiping device (200) including a stage (230) that supports a sheet-like member (220), a wiping means (210) that wipes an adhering object (30a) adhering on a peripheral portion of the sheet-like member (220), a wiping cloth (241) that is attachably and detachably provided for the wiping means (210), and a solvent (261) that adheres to the wiping cloth (241), in which the wiping means (210) is provided with the wiping cloth (241), makes the solvent (261) adhere to the wiping cloth (241), and wipes the adhering object (30a), or a stack manufacturing apparatus (1000) including such a wiping device (200).

公开(公告)号：US09808937B2

公开(公告)日：2017-11-07

申请号：US14699614

申请日：2015-04-29

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Kayo Kumakura ,  Satoru Idojiri ,  Masakatsu Ohno ,  Koichi Takeshima ,  Yoshiharu Hirakata ,  Kohei Yokoyama

IPC: B25J15/06 ,  B25J11/00 ,  B25J15/00

CPC classification number: B25J15/0616 ,  B25J11/00 ,  B25J15/0004 ,  B25J15/0028 ,  B25J15/0061

Abstract: A film suction mechanism is provided which can prevent a film-like member from warping or sagging for reliable suction, handing over, or the like of the film-like member. A film suction mechanism of the present invention is a film suction mechanism for processing or transferring a flexible film-like member. The film suction mechanism includes a suction unit having a function of attaching the film-like member thereto by suction and an air nozzle having a function of blowing pressurized air onto a first surface of the film-like member. The suction unit includes a plurality of suction pads. The suction unit is capable of attaching a second surface of the film-like member thereto by suction while the pressurized air is blown onto the first surface of the film-like member.

公开(公告)号：US09559316B2

公开(公告)日：2017-01-31

申请号：US15145246

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314 ,  H01L27/32

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract translation: 在第一基板上形成第一有机树脂层; 在第一有机树脂层上形成第一绝缘膜; 第一元件层形成在第一绝缘膜上; 在第二基板上形成第二有机树脂层; 在第二有机树脂层上形成第二绝缘膜; 第二元件层形成在第二绝缘膜上; 第一基板和第二基板接合; 第一分离步骤，其中第一有机树脂层和第一基板之间的粘合力减小; 第一有机树脂层和第一柔性基板与第一接合层接合; 第二分离步骤，其中所述第二有机树脂层和所述第二基板之间的粘合减小; 并且第二有机树脂层和第二柔性基板与第二接合层接合。

公开(公告)号：US09397149B2

公开(公告)日：2016-07-19

申请号：US14581089

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/50 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5012 ,  H01L51/5246 ,  H01L2251/303 ,  Y02E10/549 ,  Y02P70/521

Abstract: A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.

Abstract translation: 一种显示装置，包括第一柔性基板，第一柔性基板上的第一接合层，第一接合层上的第一绝缘膜，第一绝缘膜上的第一元件层，第一元件层上的第二元件层， 设置在第二元件层上的第二绝缘膜，在第二绝缘膜上方的第二接合层，以及在第二接合层上方的第二柔性基板。 第一元件层包括像素部和电路部。 像素部分包括显示元件和第一晶体管，并且电路部分包括第二晶体管。 第二元件层包括着色层和遮光层。

公开(公告)号：US20150187855A1

公开(公告)日：2015-07-02

申请号：US14581089

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5012 ,  H01L51/5246 ,  H01L2251/303 ,  Y02E10/549 ,  Y02P70/521

Abstract: A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.

Abstract translation: 一种显示装置，包括第一柔性基板，第一柔性基板上的第一接合层，第一接合层上的第一绝缘膜，第一绝缘膜上的第一元件层，第一元件层上的第二元件层， 设置在第二元件层上的第二绝缘膜，在第二绝缘膜上方的第二接合层，以及在第二接合层上方的第二柔性基板。 第一元件层包括像素部分和电路部分。 像素部分包括显示元件和第一晶体管，并且电路部分包括第二晶体管。 第二元件层包括着色层和遮光层。

公开(公告)号：US11296132B2

公开(公告)日：2022-04-05

申请号：US16884241

申请日：2020-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Satoru Idojiri ,  Kenichi Okazaki ,  Hiroki Adachi ,  Daisuke Kubota

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US11232944B2

公开(公告)日：2022-01-25

申请号：US16769433

申请日：2018-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Kayo Kumakura ,  Seiji Yasumoto ,  Satoru Idojiri

IPC: H01L21/02 ,  H01L27/32 ,  C03C17/36 ,  C03C17/38 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12 ,  H01L51/00

Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

公开(公告)号：US11004925B2

公开(公告)日：2021-05-11

申请号：US16872806

申请日：2020-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L51/50 ,  H01L41/314

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US10861917B2

公开(公告)日：2020-12-08

申请号：US15388208

申请日：2016-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Adachi ,  Satoru Idojiri ,  Kensuke Yoshizumi

IPC: H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L51/00 ,  H01L29/24 ,  H01L51/52 ,  H01L27/12

Abstract: A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.

公开(公告)号：US10861733B2

公开(公告)日：2020-12-08

申请号：US15664367

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Seiji Yasumoto ,  Naoki Ikezawa ,  Satoru Idojiri ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/683 ,  H01L21/78 ,  H01L21/48 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.