公开(公告)号：US10559697B2

公开(公告)日：2020-02-11

申请号：US15775960

申请日：2016-11-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/04 ,  H01L29/45

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US10388738B2

公开(公告)日：2019-08-20

申请号：US15469943

申请日：2017-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasutaka Nakazawa ,  Masashi Oota

IPC: H01L29/12 ,  H01L29/24 ,  H01L29/06 ,  H01L29/267 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L21/02

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US10263114B2

公开(公告)日：2019-04-16

申请号：US15447203

申请日：2017-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Junichi Koezuka

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G06F3/041 ,  H01L27/32

Abstract: A gate electrode, a first insulating film thereover, an oxide semiconductor film thereover, a source electrode and a drain electrode thereover, and a second insulating film thereover are included. The source and the drain electrodes each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film includes copper. The first and the third conductive films each include an oxide conductive film. An end portion of the first conductive film includes a region located outward from an end portion of the second conductive film. The third conductive film covers a top surface and a side surface of the second conductive film and includes a region in contact with the first conductive film.

公开(公告)号：US09722095B2

公开(公告)日：2017-08-01

申请号：US15434153

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US09449819B2

公开(公告)日：2016-09-20

申请号：US14878399

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/10 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US09219165B2

公开(公告)日：2015-12-22

申请号：US14733489

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/423 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜插入其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20150155363A1

公开(公告)日：2015-06-04

申请号：US14549958

申请日：2014-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Takahiro Sato ,  Naoya Sakamoto ,  Shunpei Yamazaki

IPC: H01L29/45 ,  H01L21/441 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/45 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A new semiconductor device in which a metal film containing Cu is used for a transistor including an oxide semiconductor film, and a method for manufacturing the semiconductor device are provided. The semiconductor device includes a transistor including a first gate electrode layer, a first gate insulating film over the first gate electrode layer, an oxide semiconductor film that is provided over the first gate insulating film to overlap the first gate electrode layer, a pair of electrode layers electrically connected to the oxide semiconductor film, a second gate insulating film over the oxide semiconductor film and the pair of electrode layers, and a second gate electrode layer that is over the second gate insulating film to overlap the oxide semiconductor film. The pair of electrode layers includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract translation: 提供了一种新的半导体器件，其中含有Cu的金属膜用于包括氧化物半导体膜的晶体管，以及制造半导体器件的方法。 半导体器件包括晶体管，其包括第一栅电极层，第一栅极电极层上的第一栅极绝缘膜，设置在第一栅极绝缘膜上以与第一栅电极层重叠的氧化物半导体膜，一对电极 电连接到氧化物半导体膜的层，氧化物半导体膜上的第二栅极绝缘膜和一对电极层，以及在第二栅极绝缘膜上方与氧化物半导体膜重叠的第二栅极电极层。 一对电极层包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。

公开(公告)号：US12243943B2

公开(公告)日：2025-03-04

申请号：US18207176

申请日：2023-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/306 ,  H01L21/465 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H10K59/123

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US11869981B2

公开(公告)日：2024-01-09

申请号：US17579857

申请日：2022-01-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  G06F3/041 ,  G06F1/16 ,  H10K59/00 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1345 ,  G02B27/01 ,  G06F3/044 ,  H10K59/40 ,  H10K59/121 ,  G02F1/1333

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  G02F1/13439 ,  G06F1/1643 ,  G06F1/1652 ,  G06F3/0412 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78648 ,  H10K59/00 ,  G02B27/017 ,  G02F1/1345 ,  G02F1/13338 ,  G02F1/13454 ,  G02F1/134381 ,  G02F2202/10 ,  G06F3/0445 ,  G06F2203/04103 ,  H10K59/1213 ,  H10K59/40

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. One embodiment of the present invention is a semiconductor device which includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film include the same element. The second oxide semiconductor film includes a region having lower crystallinity than one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US11843004B2

公开(公告)日：2023-12-12

申请号：US17370075

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yasutaka Nakazawa ,  Yukinori Shima ,  Masami Jintyou ,  Masayuki Sakakura ,  Motoki Nakashima

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L21/02609 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/045

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.