公开(公告)号：US10079061B2

公开(公告)日：2018-09-18

申请号：US15084955

申请日：2016-03-30

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiaozhou Qian ,  Viktor Markov ,  Jong-Won Yoo ,  Xiao Yan Pi ,  Alexander Kotov

IPC: G11C11/34 ,  G11C16/12 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/12 ,  G11C16/0425 ,  G11C16/10

Abstract: The disclosed embodiments comprise a flash memory device and a method of programming the device in a way that reduces degradation of the device compared to prior art methods.

公开(公告)号：US20180005701A1

公开(公告)日：2018-01-04

申请号：US15706586

申请日：2017-09-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiao Yan Pi ,  Xiaozhou Qian ,  Kai Man Yue ,  Yao Zhou ,  Yaohua Zhu

IPC: G11C16/28 ,  G11C7/12 ,  G11C29/02 ,  G11C16/08 ,  G11C7/14 ,  G11C16/24 ,  G11C7/06 ,  G11C29/50 ,  G11C29/12

CPC classification number: G11C16/28 ,  G11C7/062 ,  G11C7/12 ,  G11C7/14 ,  G11C16/08 ,  G11C16/24 ,  G11C29/025 ,  G11C2029/1204 ,  G11C2029/5006

Abstract: An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.

公开(公告)号：US09620235B2

公开(公告)日：2017-04-11

申请号：US14772047

申请日：2013-03-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Yao Zhou ,  Kai Man Yue ,  Xiaozhou Qian ,  Bin Sheng

IPC: G11C16/06 ,  G11C16/28 ,  G11C7/08 ,  G11C8/18 ,  G11C16/26 ,  G11C16/24 ,  G11C16/32 ,  G11C7/22

CPC classification number: G11C16/28 ,  G11C7/08 ,  G11C7/227 ,  G11C8/18 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32

Abstract: A self-timer for a sense amplifier in a memory device is disclosed.

公开(公告)号：US09564235B2

公开(公告)日：2017-02-07

申请号：US14386814

申请日：2013-03-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Yao Zhou ,  Xiaozhou Qian ,  Kai Man Yue ,  Guangming Lin

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/28 ,  G11C7/14 ,  G11C29/02

CPC classification number: G11C16/26 ,  G11C7/14 ,  G11C16/28 ,  G11C29/021 ,  G11C29/026 ,  G11C29/028

Abstract: A trimmable current reference generator for use in a sense amplifier is disclosed.

Abstract translation: 公开了一种用于读出放大器的可调整电流参考发生器。

公开(公告)号：US09373407B2

公开(公告)日：2016-06-21

申请号：US14386816

申请日：2013-03-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Yao Zhou ,  Xiaozhou Qian ,  Ning Bai

IPC: G11C16/28 ,  G11C16/26 ,  G11C11/56 ,  G11C16/08 ,  G11C7/06

CPC classification number: G11C16/26 ,  G11C7/062 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/28 ,  G11C2207/063

Abstract: A non-volatile memory device with a current injection sensing amplifier is disclosed.

Abstract translation: 公开了一种具有电流注入感测放大器的非易失性存储器件。

公开(公告)号：US20150078082A1

公开(公告)日：2015-03-19

申请号：US14386816

申请日：2013-03-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Yao Zhou ,  Xiaozhou Qian ,  Ning Bai

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C7/062 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/28 ,  G11C2207/063

Abstract: A non-volatile memory device with a current injection sensing amplifier is disclosed.

Abstract translation: 公开了一种具有电流注入感测放大器的非易失性存储器件。