公开(公告)号：US06989301B2

公开(公告)日：2006-01-24

申请号：US10673217

申请日：2003-09-30

申请人： Atsushi Kurokawa ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

IPC分类号： H01L21/338

CPC分类号： H01L29/66143 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0652 ,  H01L27/0658 ,  H01L27/0664 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/66318 ,  H01L29/7371

摘要： The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. The present invention is directed to the manufacturing method of a semiconductor device in which respective semiconductor layers which become a sub collector layer, a collector layer, a base layer, a wide gap emitter layer and an emitter layer are sequentially formed over one surface of a semiconductor substrate and, thereafter, respective semiconductor layers are processed to form the hetero junction bipolar transistor, the Schottky diode and the resistance element in a monolithic manner. An emitter electrode of the hetero junction bipolar transistor, a Schottky electrode of the Schottky diode and a resistance film of the resistance element are simultaneously formed using a same material (for example, WSiN). Accordingly, the man-hours can be reduced and the manufacturing cost of the semiconductor device can be reduced.

摘要翻译： 本发明在具有异质结双极晶体管（HBT），肖特基二极管和电阻元件的半导体器件的制造方法中实现了制造成品率的提高和制造成本的降低。 本发明涉及一种半导体器件的制造方法，其中，在半导体器件的一个表面上依次形成成为副集电极层，集电极层，基极层，宽间隙发射极层和发射极层的各个半导体层 半导体衬底，然后处理各个半导体层以形成异质结双极晶体管，肖特基二极管和电阻元件。 使用相同的材​​料（例如WSiN）同时形成异质结双极晶体管的发射极，肖特基二极管的肖特基电极和电阻元件的电阻膜。 因此，可以减少工时，并且可以降低半导体器件的制造成本。

公开(公告)号：US06931912B2

公开(公告)日：2005-08-23

申请号：US10484005

申请日：2002-06-21

申请人： Shuhei Tsuchie ,  Yoshinori Imamura ,  Koji Takao ,  Masanobu Toyofuku

发明人： Shuhei Tsuchie ,  Yoshinori Imamura ,  Koji Takao ,  Masanobu Toyofuku

IPC分类号： B60T8/172 ,  G01L5/00 ,  G01L5/28 ,  G01N19/02 ,  E01C23/00 ,  C01C23/00

CPC分类号： G01N19/02 ,  B60T8/172 ,  B60T2210/12

摘要： A method for directly and accurately estimating friction coefficient of a road surface independently from the slip rate is disclosed. The method measures tangential and vertical forces acting on an elastic body 3 of an elastic wheel 1, and calculates the friction coefficient of a road surface based on the measured values of these forces and angular rate of the wheel 1.

摘要翻译： 公开了一种独立于滑移率直接且准确地估计路面摩擦系数的方法。 该方法测量作用在弹性轮1的弹性体3上的切向力和垂直力，并且基于这些力的测量值和车轮1的角速度来计算路面的摩擦系数。

公开(公告)号：US5258631A

公开(公告)日：1993-11-02

申请号：US884878

申请日：1992-05-18

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/06 ,  H01L29/167 ,  H01L29/30 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US4664232A

公开(公告)日：1987-05-12

申请号：US706417

申请日：1985-02-27

申请人： Takeo Takagi ,  Yuji Sakaguchi ,  Yoshinori Imamura

发明人： Takeo Takagi ,  Yuji Sakaguchi ,  Yoshinori Imamura

IPC分类号： B25J9/10 ,  B25J9/14 ,  B25J19/00 ,  F15B15/10 ,  F15B15/26 ,  F16D49/00 ,  F16D55/32 ,  F16D65/02 ,  F16J3/00

CPC分类号： B25J9/104 ,  B25J19/0004 ,  B25J9/142 ,  F15B15/103 ,  F15B15/262 ,  F16D49/00 ,  F16D55/32 ,  F16D2065/024

摘要： A brake device for use in an arm of a robot or manipulator cmprises a brake drum, a lever pivotally supported at its intermediate portion, a brake shoe provided on the lever between its pivotally supported point and its one end, a pneumatic actuator axially contractible upon applying internal pressure thereinto and having a movable end connected to the one end or the other end of the lever, and a spring connected to one end of the lever not connected to the actuator so as to operate to elongate the actuator. This brake device is remarkably small-sized and of light-weight and consumes only small amount of fluid pressure to contribute economy of energy in comparison with prior art brake devices. The brake device according to the invention is applicable to a robot arm comprising a rotating member connected to the brake drum so as to rotate together, and two elastic actuators whose one ends are connected to a stationary member and the other are connected to each other through the rotating member in a manner to rotate the rotating member by contraction of the one actuator and simultaneous extension of the other actuator. At least one of the actuators is a pneumatic actuator axially contractible upon applying internal pressure thereinto.

摘要翻译： 一种用于机器人或机械手的臂的制动装置，包括制动鼓，在其中间部分枢转地支撑的杆，设置在杠杆上的制动蹄在其枢轴支撑点与其一端之间， 在其中施加内部压力并且具有连接到杆的一端或另一端的可动端，以及连接到杆的一端而不连接到致动器以便操作以延长致动器的弹簧。 与现有技术的制动装置相比，该制动装置的尺寸非常小，重量轻，并且仅消耗少量的流体压力，从而提供能量的经济性。 根据本发明的制动装置可应用于包括连接到制动鼓以便一起旋转的旋转构件的机器人臂，以及两个弹性致动器，其一端连接到固定构件，另一端通过 所述旋转构件以通过所述一个致动器的收缩旋转所述旋转构件并且另一个致动器的同时延伸的方式。 致动器中的至少一个是在施加内部压力时轴向收缩的气动致动器。

公开(公告)号：US09266379B2

公开(公告)日：2016-02-23

申请号：US13666109

申请日：2012-11-01

申请人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

发明人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

IPC分类号： B43M1/02 ,  B43K7/12 ,  B43K5/16 ,  B43K1/08 ,  B43K7/02 ,  B43K7/08 ,  B43K7/10 ,  B43K23/12 ,  B43K24/06 ,  B43K24/08 ,  B43K24/12 ,  B43K27/12 ,  B43K29/02 ,  C09D11/16 ,  C09D11/50

CPC分类号： B43K5/16 ,  B43K1/086 ,  B43K7/02 ,  B43K7/08 ,  B43K7/10 ,  B43K7/12 ,  B43K23/12 ,  B43K24/06 ,  B43K24/08 ,  B43K24/082 ,  B43K24/12 ,  B43K27/12 ,  B43K29/02 ,  C09D11/16 ,  C09D11/50

摘要： A thermochromic writing instrument contains a thermochromic ink, wherein a writing body is accommodated in a barrel movably in a longitudinal direction, an operation portion is provided on the outer surface of the barrel, a pen tip of the writing body is constituted so as to be projectable/retractable from/into a front-end hole of the barrel by operating the operation portion, the thermochromic ink is contained in the inside of the writing body, the pen tip capable of ejecting the thermochromic ink is provided at the front end of the writing tool, and a friction portion capable of thermally changing the color of the handwriting of the thermochromic ink by the frictional heat generated when the handwriting is rubbed with the friction portion is provided on the outer surface of the barrel.

摘要翻译： 一种热变色书写工具包含热变色油墨，其中书写体容纳在沿纵向可移动的筒中，操作部分设置在筒的外表面上，书写体的笔尖构成为 通过操作操作部分可以从筒体的前端孔中伸出/伸缩，热变色油墨被包含在书写体的内部，能够喷射热变色油墨的笔尖设置在 书写工具和能够通过摩擦部分摩擦手写时产生的摩擦热来热改变热变色墨水的笔迹的颜色的摩擦部分设置在镜筒的外表面上。

公开(公告)号：US09233574B2

公开(公告)日：2016-01-12

申请号：US13666109

申请日：2012-11-01

申请人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

发明人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

IPC分类号： B43M1/02 ,  B43K7/12 ,  B43K5/16 ,  B43K1/08 ,  B43K7/02 ,  B43K7/08 ,  B43K7/10 ,  B43K23/12 ,  B43K24/06 ,  B43K24/08 ,  B43K24/12 ,  B43K27/12 ,  B43K29/02 ,  C09D11/16 ,  C09D11/50

摘要： A thermochromic writing instrument contains a thermochromic ink, wherein a writing body is accommodated in a barrel movably in a longitudinal direction, an operation portion is provided on the outer surface of the barrel, a pen tip of the writing body is constituted so as to be projectable/retractable from/into a front-end hole of the barrel by operating the operation portion, the thermochromic ink is contained in the inside of the writing body, the pen tip capable of ejecting the thermochromic ink is provided at the front end of the writing tool, and a friction portion capable of thermally changing the color of the handwriting of the thermochromic ink by the frictional heat generated when the handwriting is rubbed with the friction portion is provided on the outer surface of the barrel.

公开(公告)号：US08322937B2

公开(公告)日：2012-12-04

申请号：US12528724

申请日：2008-02-08

申请人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

发明人： Yoshinori Imamura ,  Nobuo Sekine ,  Masashi Ando

IPC分类号： A47L13/32 ,  B43K5/16

CPC分类号： B43K5/16 ,  B43K1/086 ,  B43K7/02 ,  B43K7/08 ,  B43K7/10 ,  B43K7/12 ,  B43K23/12 ,  B43K24/06 ,  B43K24/08 ,  B43K24/082 ,  B43K24/12 ,  B43K27/12 ,  B43K29/02 ,  C09D11/16 ,  C09D11/50

摘要： A thermochromic writing instrument contains a thermochromic ink, wherein a writing body 8 is accommodated in a barrel 2 movably in a longitudinal direction, an operation portion 5 is provided on the outer surface of the barrel 2, and a pen tip 81 of the writing body 8 is constituted so as to be projectable/retractable from/into a front-end hole 31 of the barrel 2 by operating the operation portion 5. The thermochromic ink 83 is contained in the inside of the writing body 8, the pen tip 81 capable of ejecting the thermochromic ink 83 is provided at the front end of the writing tool, and a friction portion 4 capable of thermally changing the color of the handwriting of the thermochromic ink 83 by the frictional heat generated when the handwriting is rubbed with the friction portion 4 is provided on the outer surface of the barrel 2.

摘要翻译： 热变色书写工具包含热变色油墨，其中书写体8容纳在沿纵向可移动的筒体2中，操作部分5设置在筒体2的外表面上，书写体的笔尖81 8通过操作操作部分5而被构造成能够从筒体2的前端孔31伸出/伸缩。热变色油墨83容纳在书写体8的内部，笔尖81能够 喷墨热变色油墨83设置在书写工具的前端，以及摩擦部分4，该摩擦部分4能够通过在摩擦部分摩擦手写时产生的摩擦热量热变色热变色油墨83的笔迹的颜色 4设置在筒体2的外表面上。

公开(公告)号：US07378690B2

公开(公告)日：2008-05-27

申请号：US11727246

申请日：2007-03-26

申请人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/66318 ,  H01L29/0657 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.

摘要翻译： 提供了改进双极晶体管的性质的技术。 具体地说，通过剥离法在基台周围形成集电极时，在区域OA1的外周与形成有基台面4a的区域之间的连接部分上形成抗蚀剂膜， 随后在衬底的整个表面上依次形成金锗（AuGe），镍（Ni）和Au，使得它们的堆叠膜不会变成隔离图案。 结果，基底台面4a上的层叠膜在区域OA1的外周与层叠膜连接，有利于层叠膜在基台面4a上的剥离。 此外，通过使用几乎不与n型GaAs层反应的诸如WSi的材料形成背面通孔电极来减少形成从衬底的背面延伸到背面通孔电极的通孔形成侧面蚀刻，或 n型InGaAs层。

公开(公告)号：US20070176207A1

公开(公告)日：2007-08-02

申请号：US11727246

申请日：2007-03-26

申请人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

IPC分类号： H01L31/00

CPC分类号： H01L29/66318 ,  H01L29/0657 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.

公开(公告)号：US20070059853A1

公开(公告)日：2007-03-15

申请号：US11554952

申请日：2006-10-31

申请人： Atsushi KUROKAWA ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

发明人： Atsushi KUROKAWA ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

IPC分类号： H01L21/00

CPC分类号： H01L29/66143 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0652 ,  H01L27/0658 ,  H01L27/0664 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/66318 ,  H01L29/7371

摘要： The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. The present invention is directed to the manufacturing method of a semiconductor device in which respective semiconductor layers which become a sub collector layer, a collector layer, a base layer, a wide gap emitter layer and an emitter layer are sequentially formed over one surface of a semiconductor substrate and, thereafter, respective semiconductor layers are processed to form the hetero junction bipolar transistor, the Schottky diode and the resistance element in a monolithic manner. An emitter electrode of the hetero junction bipolar transistor, a Schottky electrode of the Schottky diode and a resistance film of the resistance element are simultaneously formed using a same material (for example, WSiN). Accordingly, the man-hours can be reduced and the manufacturing cost of the semiconductor device can be reduced.

摘要翻译： 本发明在具有异质结双极晶体管（HBT），肖特基二极管和电阻元件的半导体器件的制造方法中实现了制造成品率的提高和制造成本的降低。 本发明涉及一种半导体器件的制造方法，其中，在半导体器件的一个表面上依次形成成为副集电极层，集电极层，基极层，宽间隙发射极层和发射极层的各个半导体层 半导体衬底，然后处理各个半导体层以形成异质结双极晶体管，肖特基二极管和电阻元件。 使用相同的材​​料（例如WSiN）同时形成异质结双极晶体管的发射极，肖特基二极管的肖特基电极和电阻元件的电阻膜。 因此，可以减少工时，并且可以降低半导体器件的制造成本。