公开(公告)号：US11798980B2

公开(公告)日：2023-10-24

申请号：US17749240

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H01L21/285 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L21/28556 ,  H10B12/30

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US11600774B2

公开(公告)日：2023-03-07

申请号：US17094121

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Minhyun Lee ,  Houk Jang ,  Donhee Ham ,  Chengye Liu ,  Henry Julian Hinton ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L45/00 ,  H01L27/24

Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.

公开(公告)号：US11417790B2

公开(公告)日：2022-08-16

申请号：US15942659

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L21/76 ,  H01L23/48 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  H01L27/30 ,  G01S17/931 ,  H01L31/0304 ,  H01L31/0296 ,  H01L31/0312 ,  H01L31/0256 ,  G05D1/02

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20210407795A1

公开(公告)日：2021-12-30

申请号：US17358089

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNSOO KIM ,  Jaewoon Kim ,  Haeryong Kim ,  Jinho Lee ,  Tsubasa Shiratori

IPC: H01L21/02 ,  H01L49/02

Abstract: Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.

公开(公告)号：US11004888B2

公开(公告)日：2021-05-11

申请号：US16692603

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L27/00 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  G01J5/20

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.

公开(公告)号：US10559660B2

公开(公告)日：2020-02-11

申请号：US16248945

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/06 ,  H01L29/267 ,  H01L29/12 ,  H01L29/26 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10553730B2

公开(公告)日：2020-02-04

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US10522583B2

公开(公告)日：2019-12-31

申请号：US15897439

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L33/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L27/00 ,  G01J5/20

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.

公开(公告)号：US10217819B2

公开(公告)日：2019-02-26

申请号：US15010807

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/06 ,  H01L29/267 ,  H01L29/417 ,  H01L29/12 ,  H01L29/26 ,  H01L29/165 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US20190027529A1

公开(公告)日：2019-01-24

申请号：US15897439

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.