公开(公告)号：US20170330935A1

公开(公告)日：2017-11-16

申请号：US15605057

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/78 ,  H01L21/225 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US09761532B2

公开(公告)日：2017-09-12

申请号：US15083827

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Hyeonjin Shin ,  Changhyun Kim ,  Changseok Lee ,  Seongjun Park ,  Hyunjae Song

IPC: H01L23/495 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/485 ,  H01L23/5283

Abstract: A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.

公开(公告)号：US12079972B2

公开(公告)日：2024-09-03

申请号：US17572223

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Park ,  Shuangquan Wang ,  Dongwoon Bai ,  Jungwon Lee

IPC: G06K9/40 ,  G06T5/40 ,  G06T5/80 ,  H04N23/88

CPC classification number: G06T5/80 ,  G06T5/40 ,  H04N23/88

Abstract: A method of performing scene-dependent lens shading correction (SD-LSC) is provided. The method includes collecting scene information from a Bayer thumbnail of an input image; generating a standard red green blue (sRGB) thumbnail by processing the Bayer thumbnail of the input image to simulate white balance (WB) and pre-gamma blocks; determining a representative color channel ratio of the input image based on the scene information and the sRGB thumbnail; determining an ideal grid gain of the input image based on the representative color channel ratio and a grid gain of the input image; merging the ideal grid gain and the grid gain of the input image to generate a new grid gain; and applying the new grid gain to the input image.

公开(公告)号：US20220375044A1

公开(公告)日：2022-11-24

申请号：US17572223

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Park ,  Shuangquan Wang ,  Dongwoon Bai ,  Jungwon Lee

IPC: G06T5/00 ,  G06T5/40 ,  H04N9/73

Abstract: A method of performing scene-dependent lens shading correction (SD-LSC) is provided. The method includes collecting scene information from a Bayer thumbnail of an input image; generating a standard red green blue (sRGB) thumbnail by processing the Bayer thumbnail of the input image to simulate white balance (WB) and pre-gamma blocks; determining a representative color channel ratio of the input image based on the scene information and the sRGB thumbnail; determining an ideal grid gain of the input image based on the representative color channel ratio and a grid gain of the input image; merging the ideal grid gain and the grid gain of the input image to generate a new grid gain; and applying the new grid gain to the input image.

公开(公告)号：US11367799B2

公开(公告)日：2022-06-21

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  H01L31/0304 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US11239274B2

公开(公告)日：2022-02-01

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Eunkyu Lee ,  Seongjun Park ,  Kiyoung Lee ,  Jinseong Heo

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264 ,  B82Y15/00

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US11222953B2

公开(公告)日：2022-01-11

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US11120536B2

公开(公告)日：2021-09-14

申请号：US16514560

申请日：2019-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Park ,  Shuangquan Wang ,  Jungwon Lee

IPC: G06T7/00 ,  G06T5/00 ,  G06T5/50 ,  G06T5/20

Abstract: An apparatus and method for determining image sharpness is provided. According to one embodiment, an apparatus includes a weight device configured to determine a weight map of a reference image; an image sharpening device configured to sharpen the reference image using at least one sharpening method; an edge activity map device connected to the image sharpening device and configured to determine a first edge activity map Φ(x, y) for each sharpened image of reference image by the at least one sharpening method; and an edge sharpness metric device connected to the weight device and the first edge activity map device and configured to determine an edge sharpness metric (ESM) for each sharpened image of the reference image by the at least one sharpening method based on the weight map and the edge activity map for each sharpened image of the reference image by the at least one sharpening method.

公开(公告)号：US10928723B2

公开(公告)日：2021-02-23

申请号：US16708969

申请日：2019-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Seongjun Park ,  Keunwook Shin ,  Changseok Lee ,  Dongwook Lee ,  Minsu Seol ,  Sangwon Kim ,  Seongjun Jeong

IPC: G03F1/64 ,  G03F1/62 ,  G03F1/22

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US10790356B2

公开(公告)日：2020-09-29

申请号：US16152576

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285 ,  H01L29/45 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.