公开(公告)号：US20230165161A1

公开(公告)日：2023-05-25

申请号：US17983554

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Stuart Papworth Parkin ,  See-Hun Yang ,  Jiho Yoon ,  Ung Hwan Pi

IPC: H01L43/02 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222

Abstract: A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.

公开(公告)号：US11588100B2

公开(公告)日：2023-02-21

申请号：US17401620

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Kwang Seok Kim ,  Jangeun Lee ,  Ung Hwan Pi

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

公开(公告)号：US11545616B2

公开(公告)日：2023-01-03

申请号：US16893594

申请日：2020-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ung Hwan Pi ,  Dongkyu Lee

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01F41/34 ,  H01L43/12 ,  H01F10/32

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

公开(公告)号：US20220262419A1

公开(公告)日：2022-08-18

申请号：US17735931

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Ung Hwan Pi

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

公开(公告)号：US20220216266A1

公开(公告)日：2022-07-07

申请号：US17483156

申请日：2021-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ung Hwan Pi ,  Sung Chul Lee

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.

公开(公告)号：US11088319B2

公开(公告)日：2021-08-10

申请号：US16685415

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok Kim ,  Young Man Jang ,  Ung Hwan Pi

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US20210043681A1

公开(公告)日：2021-02-11

申请号：US16897810

申请日：2020-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ung Hwan Pi ,  Dongkyu Lee

IPC: H01L27/22 ,  H01L23/528 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32

Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.

公开(公告)号：US10910552B2

公开(公告)日：2021-02-02

申请号：US16352957

申请日：2019-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung Lee ,  Yong Sung Park ,  Jeong-Heon Park ,  Hyun Cho ,  Ung Hwan Pi

IPC: H01L43/02 ,  H01L43/10 ,  H01L21/67 ,  G11C14/00 ,  H01L43/12 ,  H01L27/108 ,  H01L27/22 ,  H01L27/11 ,  G11C11/16

Abstract: A magnetic memory device, a method for manufacturing a magnetic memory device, and a substrate treating apparatus, the device including a substrate including a first memory region and a second memory region; a first magnetic tunnel junction pattern on the first memory region, the first magnetic tunnel junction pattern including a first free pattern and a first oxide pattern on the first free pattern; and a second magnetic tunnel junction pattern on the second memory region, the second magnetic tunnel junction pattern including a second free pattern and a second oxide pattern on the second free pattern, wherein a ratio of a thickness of the first oxide pattern to a thickness of the first free pattern is different from a ratio of a thickness of the second oxide pattern to a thickness of the second free pattern.

公开(公告)号：US20200082858A1

公开(公告)日：2020-03-12

申请号：US16369869

申请日：2019-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE HOON KIM ,  Hee Ju Shin ,  Ung Hwan Pi

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.

公开(公告)号：US10553790B1

公开(公告)日：2020-02-04

申请号：US16440461

申请日：2019-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung Lee ,  Ung Hwan Pi ,  Eunsun Noh ,  Yong Sung Park

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.