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公开(公告)号：US10892196B2
公开(公告)日：2021-01-12
申请号：US16411680
申请日：2019-05-14
发明人： Eunsun Noh
IPC分类号： H01L21/66 , H01L43/12 , H01F41/34 , H01L21/683 , G01R33/032 , H01F10/32 , H01L27/22 , G01R33/12 , H01L43/02
摘要： A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.
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公开(公告)号：US20190140163A1
公开(公告)日：2019-05-09
申请号：US16021708
申请日：2018-06-28
发明人： Sangjun Yun , Sang-Kuk Kim , Jae Hoon Kim , Eunsun Noh , Se Chung Oh , Sung Chul Lee , Daeeun Jeong
摘要： Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.
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公开(公告)号：US11727973B2
公开(公告)日：2023-08-15
申请号：US17316973
申请日：2021-05-11
发明人： Eunsun Noh , Juhyun Kim , Ung Hwan Pi
CPC分类号： G11C11/161 , G01R33/093 , H10N50/01 , H10N50/85
摘要： A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.
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公开(公告)号：US11205679B2
公开(公告)日：2021-12-21
申请号：US16794845
申请日：2020-02-19
发明人： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
摘要： A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
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公开(公告)号：US10957845B2
公开(公告)日：2021-03-23
申请号：US16442991
申请日：2019-06-17
发明人： Eunsun Noh , Juhyun Kim , Whankyun Kim
摘要： Provided are magnetic memory devices and method of fabricating the same. The magnetic memory device includes a magnetic tunnel junction pattern disposed on a substrate and including a free layer, a tunnel barrier layer and a pinned layer which are sequentially stacked, and a first spin-orbit torque (SOT) line being in contact with a first sidewall of the free layer of the magnetic tunnel junction pattern.
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公开(公告)号：US11834738B2
公开(公告)日：2023-12-05
申请号：US17956281
申请日：2022-09-29
发明人： Joonmyoung Lee , Whankyun Kim , Eunsun Noh , Jeong-heon Park , Junho Jeong
CPC分类号： C23C14/541 , C23C14/0057 , G11B5/851 , H10B61/00 , H10N50/01
摘要： A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
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公开(公告)号：US11227665B2
公开(公告)日：2022-01-18
申请号：US17001740
申请日：2020-08-25
发明人： Eunsun Noh , Sungchul Lee , Unghwan Pi
摘要： A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.
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公开(公告)号：US20210028228A1
公开(公告)日：2021-01-28
申请号：US16794845
申请日：2020-02-19
发明人： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
摘要： A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
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公开(公告)号：US20220037586A1
公开(公告)日：2022-02-03
申请号：US17212790
申请日：2021-03-25
发明人： Junho Jeong , Joonmyoung Lee , Whankyun Kim , Eunsun Noh , Jeongheon Park , Wanjin Chung
摘要： Provided is a magnetic memory device. The magnetic memory device may include a magnetic tunnel junction. The magnetic tunnel junction may include a fixed layer, a tunnel barrier layer on the fixed layer, a free layer on the tunnel barrier layer, a protection layer above the free layer, the protection layer comprising an amorphous metal boride, and a capping layer on the protection layer, the capping layer comprising a metal or a metal nitride.
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公开(公告)号：US20210118753A1
公开(公告)日：2021-04-22
申请号：US17116462
申请日：2020-12-09
发明人： Eunsun Noh
IPC分类号： H01L21/66 , G01R33/032 , G01R33/12 , H01F10/32 , H01L43/12 , H01F41/34 , H01L21/683 , H01L27/22 , H01L43/02
摘要： A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.
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