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1.发明申请公开(公告)号：US20190115527A1
公开(公告)日：2019-04-18
申请号：US16107242
申请日：2018-08-21
发明人： Jeong-Heon Park , Yong Sung Park , Joonmyoung Lee , Hyun Cho , Se Chung Oh
摘要： Provided are process control methods and process control systems. The method includes performing a deposition process on a lot defined by a group of a plurality of wafers, performing a measurement process on the lot to obtain a measured value with respect to at least one wafer among the plurality of wafers, producing a target value of a factor of a process condition in the deposition process by using a difference between the measured value and a reference value, and providing an input value of the factor with respect to a subsequent lot based on the target value. The operation of providing the input value of the factor includes obtaining a previous target value of the factor previously produced with respect to at least one previous lot, and providing a weighted average of the previous target value and the target value as the input value.
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公开(公告)号：US10862025B2
公开(公告)日：2020-12-08
申请号：US16434478
申请日：2019-06-07
发明人： Joonmyoung Lee , Ung Hwan Pi , Eunsun Noh , Yong Sung Park
摘要： A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.
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公开(公告)号：US09831422B2
公开(公告)日：2017-11-28
申请号：US14919717
申请日：2015-10-21
摘要： A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.
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4.发明授权公开(公告)号：US10910552B2
公开(公告)日：2021-02-02
申请号：US16352957
申请日：2019-03-14
发明人： Joonmyoung Lee , Yong Sung Park , Jeong-Heon Park , Hyun Cho , Ung Hwan Pi
IPC分类号： H01L43/02 , H01L43/10 , H01L21/67 , G11C14/00 , H01L43/12 , H01L27/108 , H01L27/22 , H01L27/11 , G11C11/16
摘要： A magnetic memory device, a method for manufacturing a magnetic memory device, and a substrate treating apparatus, the device including a substrate including a first memory region and a second memory region; a first magnetic tunnel junction pattern on the first memory region, the first magnetic tunnel junction pattern including a first free pattern and a first oxide pattern on the first free pattern; and a second magnetic tunnel junction pattern on the second memory region, the second magnetic tunnel junction pattern including a second free pattern and a second oxide pattern on the second free pattern, wherein a ratio of a thickness of the first oxide pattern to a thickness of the first free pattern is different from a ratio of a thickness of the second oxide pattern to a thickness of the second free pattern.
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公开(公告)号：US10553790B1
公开(公告)日：2020-02-04
申请号：US16440461
申请日：2019-06-13
发明人： Joonmyoung Lee , Ung Hwan Pi , Eunsun Noh , Yong Sung Park
摘要： A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.
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公开(公告)号：US20170092848A1
公开(公告)日：2017-03-30
申请号：US15210627
申请日：2016-07-14
发明人： Youngman Jang , Joonmyoung Lee , Keewon Kim , Yong Sung Park
摘要： A magnetic memory device includes a magnetic tunnel junction pattern including a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer. The first free layer includes a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface, and a second free magnetic pattern in contact with the second surface. The second free magnetic pattern includes iron-nickel (FeNi), and a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.
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