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公开(公告)号：US20220316052A1
公开(公告)日：2022-10-06
申请号：US17711147
申请日：2022-04-01
发明人： Sangwon KIM , Kyung-Eun BYUN , Yeonchoo CHO , Keunwook SHIN , Eunkyu LEE , Changseok LEE , Hyunjae SONG , Hyeonjin SHIN , Jungsoo YOON , Soyoung LEE , Hyunseok LIM
IPC分类号： C23C16/26 , H01L29/45 , H01L21/285 , C23C16/511 , C23C16/505 , C23C16/02
摘要： Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea/μm2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.
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公开(公告)号：US20220254643A1
公开(公告)日：2022-08-11
申请号：US17547626
申请日：2021-12-10
发明人： Kyung-Eun BYUN , Sangwoo KIM , Minsu SEOL , Hyeonjin SHIN , Minseok SHIN , Pin ZHAO , Taehyeong KIM , Jaehwan JUNG
IPC分类号： H01L21/308 , H01J37/34
摘要： A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.
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公开(公告)号：US20220173221A1
公开(公告)日：2022-06-02
申请号：US17398363
申请日：2021-08-10
发明人： Hyeonjin SHIN , Sangwon KIM , Kyung-Eun BYUN , Hyunjae SONG , Keunwook SHIN , Eunkyu LEE , Changseok LEE , Yeonchoo CHO , Taejin CHOI
IPC分类号： H01L29/45 , H01L27/108 , H01L29/15 , H01L29/40
摘要： An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of a peripheral region of the semiconductor layer, a metal layer facing the semiconductor layer, a graphene layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the graphene layer and the semiconductor and covering the first region.
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公开(公告)号：US20220157947A1
公开(公告)日：2022-05-19
申请号：US17398515
申请日：2021-08-10
发明人： Minsu SEOL , Hyeonsuk SHIN , Hyeonjin SHIN , Hyuntae HWANG , Changseok LEE , Seongin YOON
摘要： Provided are a black phosphorus-two dimensional material complex and a method of manufacturing the black phosphorus-two dimensional material complex. The black phosphorus-two dimensional material complex includes: first and second two-dimensional material layers, which each have a two-dimensional crystal structure and are coupled to each other by van der Waals force; and a black phosphorus sheet which between the first and second two-dimensional material layers and having a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded.
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公开(公告)号：US20210372786A1
公开(公告)日：2021-12-02
申请号：US17145966
申请日：2021-01-11
发明人： Eunkyu LEE , Yeonchoo CHO , Sangwon KIM , Kyung-Eun BYUN , Hyunjae SONG , Hyeonjin SHIN
IPC分类号： G01B15/02 , H01L21/66 , H01L21/285 , H01L29/45 , G01N23/2208
摘要： A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.
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公开(公告)号：US20210355582A1
公开(公告)日：2021-11-18
申请号：US17318238
申请日：2021-05-12
发明人： Hyeonjin SHIN , Sangwon KIM , Kyung-Eun BYUN , Eunkyu LEE , Changhyun KIM , Changseok LEE
IPC分类号： C23C16/50 , C23C16/26 , C23C16/32 , C01B32/182 , C01B21/064 , C01B25/00
摘要： Provided are a conductive structure and a method of controlling a work function of metal. The conductive structure includes a conductive material layer including metal and a work function control layer for controlling a work function of the conductive structure by being bonded to the conductive material layer. The work function control layer includes a two-dimensional material with a defect.
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公开(公告)号：US20210305378A1
公开(公告)日：2021-09-30
申请号：US17014127
申请日：2020-09-08
发明人： Minsu SEOL , Hyeonjin SHIN , Minseok YOO , Minhyun LEE
IPC分类号： H01L29/41 , H01L29/417 , H01L29/24 , H01L29/06 , H01L29/45 , H01L29/786 , H01L29/66
摘要： Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.
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38.发明申请公开(公告)号：US20210300845A1
公开(公告)日：2021-09-30
申请号：US17211174
申请日：2021-03-24
发明人： Sangwon KIM , Changsik SONG , Juhyen LEE , Hyejin CHO , Hyeonjin SHIN , Minsu SEOL , Dongwook LEE
摘要： Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.
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公开(公告)号：US20210296445A1
公开(公告)日：2021-09-23
申请号：US17203010
申请日：2021-03-16
发明人： Minhyun LEE , Minsu SEOL , Yeonchoo CHO , Hyeonjin SHIN
IPC分类号： H01L29/10 , H01L29/423 , H01L29/24
摘要： A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
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公开(公告)号：US20210288171A1
公开(公告)日：2021-09-16
申请号：US17201485
申请日：2021-03-15
发明人： Minhyun LEE , Minsu SEOL , Yeonchoo CHO , Hyeonjin SHIN
IPC分类号： H01L29/778 , H01L29/78 , H01L29/24 , H01L27/092
摘要： A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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