公开(公告)号：US20110287222A1

公开(公告)日：2011-11-24

申请号：US13136056

申请日：2011-07-21

申请人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C01B21/06 ,  B32B3/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  Y10T428/24355

摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.

摘要翻译： 制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。 称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。 将容器放入反应容器中。 入口管连接到反应容器。 从氮气罐通过压力控制器引入氮气以填充反应容器。 当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。 结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。

公开(公告)号：US07708833B2

公开(公告)日：2010-05-04

申请号：US12073904

申请日：2008-03-11

申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B35/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

公开(公告)号：US07670430B2

公开(公告)日：2010-03-02

申请号：US12221642

申请日：2008-08-05

申请人： Mikiya Ichimura ,  Katsuhiro Imai

发明人： Mikiya Ichimura ,  Katsuhiro Imai

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C22B3/22 ,  C22B7/003 ,  C22B7/004 ,  C22B26/10 ,  C30B29/403 ,  C30B29/406 ,  Y02P10/234

摘要： It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or higher than the melting point of sodium metal to separate and recover the sodium metal 22 from the flux 23. The medium is a hydrocarbon, for example.

摘要翻译： 提供了一种在短时间内和以可重复使用的形式从含金属钠的助熔剂中轻轻且安全地回收钠金属的方法。 助熔剂23在介质19中以等于或高于金属钠熔点的温度与金属钠22反应而加热，以分离​​和回收来自助熔剂23的金属钠。介质是例如烃。

公开(公告)号：US20090078193A1

公开(公告)日：2009-03-26

申请号：US12234786

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B7/10

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1096

摘要： A growth apparatus is used having a plurality of crucibles 10 each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

摘要翻译： 使用具有多个用于容纳溶液的坩埚10，用于加热坩埚的加热元件和用于至少容纳坩埚和加热元件并用于填充至少包含氮气的气氛的压力容器的生长装置。 在每个坩埚中放置一个籽晶以在籽晶上生长氮化物单晶。

公开(公告)号：US07443470B2

公开(公告)日：2008-10-28

申请号：US11524255

申请日：2006-09-21

申请人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

发明人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133345 ,  G02F1/133555 ,  G02F1/133711

摘要： A liquid crystal device includes a pair of substrates, a liquid crystal layer provided between the substrates, and a plurality of sub-pixels each having a transmissive display region and a reflective display region. One of the substrates includes switching elements corresponding to the sub-pixels, lines connected to the switching elements, and an insulating film provided on the switching elements and the lines. The insulating film includes first recesses provided in the transmissive display regions, and second recesses provided along boundaries between the adjoining sub-pixels. At least a part of the insulating film other than the first and second recesses planarly overlaps with the reflective display regions. The thickness of the liquid crystal layer is smaller in the reflective display regions than in the transmissive display regions having the first recesses. The depth of the second recesses is smaller than the depth of the first recesses.

摘要翻译： 液晶装置包括一对基板，设置在基板之间的液晶层和分别具有透射显示区域和反射显示区域的多个子像素。 其中一个基板包括对应于子像素的开关元件，连接到开关元件的线，以及设置在开关元件和线上的绝缘膜。 绝缘膜包括设置在透射显示区域中的第一凹部和沿着邻接的子像素之间的边界设置的第二凹部。 除了第一和第二凹部以外的绝缘膜的至少一部分与反射显示区域平面地重叠。 反射显示区域中的液晶层的厚度比具有第一凹部的透射显示区域的厚度小。 第二凹部的深度小于第一凹部的深度。

公开(公告)号：US20070144427A1

公开(公告)日：2007-06-28

申请号：US11682385

申请日：2007-03-06

申请人： Makoto Iwai ,  Katsuhiro Imai

发明人： Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C30B11/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/403

摘要： An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AIN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850° C. or higher and 1200° C. or lower.

摘要翻译： 通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。 优选地，将AIN单晶在50atms以下的氮分压下，在850℃以上且1200℃以下的温度下生长。

公开(公告)号：US20070101931A1

公开(公告)日：2007-05-10

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US06565654B2

公开(公告)日：2003-05-20

申请号：US09897797

申请日：2001-07-02

申请人： Toshihisa Yokoyama ,  Masahiro Murasato ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Toshihisa Yokoyama ,  Masahiro Murasato ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B2102

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

摘要： In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.

公开(公告)号：US06440628B1

公开(公告)日：2002-08-27

申请号：US09486534

申请日：2000-02-28

申请人： Makoto Watanabe ,  Katsuhiro Imai

发明人： Makoto Watanabe ,  Katsuhiro Imai

IPC分类号： G03G909

CPC分类号： G03G9/0904

摘要： A toner for development of electrostatic images comprising carbon black as a colorant, wherein the carbon black has the following features: (1) the primary particle diameter being within a range of 28 to 60 nm; (2) the DBP oil absorption being within a range of 40 to 75 ml/100 g; and (3) the pH being within a range of 6.0 to 10.0, and a production process of the toner by a suspension polymerization process.

摘要翻译： 一种用于显影包含炭黑作为着色剂的静电图像的调色剂，其中所述炭黑具有以下特征：（1）一次粒径在28至60nm的范围内;（2）DBP吸油率在 范围为40至75ml / 100g; 和（3）pH在6.0至10.0的范围内，以及通过悬浮聚合方法制备调色剂的方法。

公开(公告)号：US5961720A

公开(公告)日：1999-10-05

申请号：US909138

申请日：1997-08-11

申请人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

发明人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

IPC分类号： C30B15/00 ,  C30B15/08 ,  C30B35/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1064

摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

摘要翻译： 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。