Abstract:
A transducing head may be connected to a controller and positioned proximal a data storage medium. The controller can be connected to a wear level identification circuit and configured to identify a first data region of the data storage medium having a first wear level and a second data region of the data storage medium having a second wear level. The first and second wear levels can respectively correspond to different amounts of component degradation of the data storage device.
Abstract:
At least one laser input current is applied to a laser in a heat assisted magnetic recording device. Laser output power of the laser is measured at the at least one applied laser current. A relationship is characterized amongst temperature, applied laser input current and laser output power. Laser current is set to an optimal laser current as determined at manufacturing. A metric of recording performance is measured to determine if the relationship is acceptable.
Abstract:
An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.
Abstract:
Data is written to cells of a resistance-based, non-volatile memory. An activity metric is tracked since the writing of the data to the cells. In response to the activity metric satisfying a threshold, a bias signal is applied to the cells to reverse a resistance shift of the cells.
Abstract:
In one implementation, a method and apparatus is provided for determining an active fly height setting for a transducer head from samples collected from a proximity sensor during less than a single revolution of a disc. Implementations of the method and system use adaptive discrete wavelet transform parameters generated from the collected samples to determine an active fly height setting for a transducer head.
Abstract:
A data storage device receives a write data command and data. The data is stored in a buffer of the data storage device. The data storage device issues a command complete status indication. After the command complete status indication is issued, the data are stored in a primary memory of the data storage device. The primary memory comprises a first type of non-volatile memory and the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory.
Abstract:
A data storage device may generally be constructed and operated with at least one variable resistance memory cell having a first logic state threshold that is replaced with a second logic state threshold by a controller. The first and second logic states respectively corresponding to a predicted resistance shift that is based upon an operating temperature profile.
Abstract:
A data storage system for use in a high radiation environment has a radiation-hardened storage controller that measures a current draw of a storage drive in a storage array. The storage drive is not radiation-hardened. Based on a characteristic of the current draw, a latch up is detected the storage drive. Based on the detected latch up, power is removed from all or part of the storage drive. After a cooling period has elapsed, the power is reapplied to the storage drive.
Abstract:
A data storage apparatus is presented that includes a well structure comprising a suspension medium, and a magnetic particle disposed in at least a portion of the well structure. A control system is configured to represent a data state corresponding to a positioning of the magnetic particle within the well structure, the magnetic particle moved responsive to an applied field and a present material state of the well structure. Various addressable arrays of well structures and associated control elements can be established to form data storage devices.
Abstract:
A memory device formed of ferroelectric field effect transistors (FeFETs). The memory device can be used as a front end buffer, such as in a data storage device having a non-volatile memory (NVM). A controller can be configured to transfer user data between the NVM and an external client (host) via the buffer. The FeFETs can be arranged in a two-dimensional (2D) or a three-dimensional (3D) array. A monitor circuit can be used to monitor operation of the FeFETs. An optimization controller can be used to adjust at least one operational parameter associated with the FeFETs responsive to the monitored operation by the monitor circuit. The FeFETs may require a refresh operation after each read operation. A power down sequence can involve a read operation without a subsequent refresh operation to wipe the FeFETs, the read operation jettisoning the data read from the buffer memory.