公开(公告)号：US20200013893A1

公开(公告)日：2020-01-09

申请号：US16571769

申请日：2019-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

公开(公告)号：US20170117305A1

公开(公告)日：2017-04-27

申请号：US15399154

申请日：2017-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477

CPC classification number: H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20170033230A1

公开(公告)日：2017-02-02

申请号：US15292287

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Hideomi SUZAWA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Sachiaki TEZUKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

Abstract translation: 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US20160254386A1

公开(公告)日：2016-09-01

申请号：US15047940

申请日：2016-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO ,  Naoki OKUNO ,  Motoki NAKASHIMA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

Abstract translation: 提供了具有稳定电特性的晶体管。 提供了一种半导体器件，其包括在衬底上的氧化物半导体，与氧化物半导体的顶表面接触的第一导体，与氧化物半导体的顶表面接触的第二导体，第一和第二导体上的第一绝缘体 并且与所述氧化物半导体的顶表面接触，在所述第一绝缘体上方的第二绝缘体，所述第二绝缘体上的第三导体以及所述第三导体上的第三绝缘体。 第三导体与第一导体重叠，其中第一和第二绝缘体位于它们之间，并且与第二导体重叠，其中第一和第二绝缘体位于它们之间。 第一绝缘体包含氧。 第二绝缘体比第一绝缘体传输更少的氧。 第三绝缘体比第一绝缘体传输更少的氧。

公开(公告)号：US20160240682A1

公开(公告)日：2016-08-18

申请号：US15010045

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78696

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract translation: 提供新型氧化物半导体膜。 氧化物半导体膜包括In，M和Zn。 M是Al，Ga，Y或Sn。 在氧化物半导体膜中的In的比例为4的情况下，M的比例大于等于1.5且小于等于2.5，Zn的比例大于等于2且小于或等于2， 等于4。

公开(公告)号：US20150340505A1

公开(公告)日：2015-11-26

申请号：US14719431

申请日：2015-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Masayuki SAKAKURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/465 ,  H01L21/477 ,  H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/441

CPC classification number: H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：在高于或等于450℃并低于衬底的应变点的温度下加热时，在衬底上方的第一栅电极上形成第一绝缘膜，形成 在所述第一绝缘膜上方的第一氧化物半导体膜，向所述第一氧化物半导体膜添加氧，然后在所述第一氧化物半导体膜上形成第二氧化物半导体膜，进行热处理，使得所述第一氧化物半导体膜中包含的部分氧为 转移到第二氧化物半导体膜。

公开(公告)号：US20150243738A1

公开(公告)日：2015-08-27

申请号：US14626049

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/24 ,  C01G15/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。