公开(公告)号：US20050170549A1

公开(公告)日：2005-08-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/331 ,  H01L31/109 ,  H01L31/11 ,  H01L21/00 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US08742316B2

公开(公告)日：2014-06-03

申请号：US12942338

申请日：2010-11-09

申请人： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

发明人： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC分类号： G01J1/44

CPC分类号： G01J1/46

摘要： Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

摘要翻译： 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

公开(公告)号：US08338868B2

公开(公告)日：2012-12-25

申请号：US12626343

申请日：2009-11-25

申请人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

摘要翻译： 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US20110140168A1

公开(公告)日：2011-06-16

申请号：US12769198

申请日：2010-04-28

申请人： Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

发明人： Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L31/107

CPC分类号： H01L31/02327 ,  H01L31/1075

摘要： Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer.

摘要翻译： 提供了具有集成微透镜的雪崩光电探测器。 雪崩光电检测器包括半导体衬底上的光吸收层，光吸收层上的放大层，放大层内的扩散层和对应于扩散层设置的微透镜。 微透镜包括折射率小于第一折射层的折射率的第一折射层和第二折射层。

公开(公告)号：US20110133059A1

公开(公告)日：2011-06-09

申请号：US12942338

申请日：2010-11-09

申请人： Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

发明人： Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC分类号： G01J1/44

CPC分类号： G01J1/46

摘要： Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

摘要翻译： 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

公开(公告)号：US20100133590A1

公开(公告)日：2010-06-03

申请号：US12626343

申请日：2009-11-25

申请人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L31/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

摘要翻译： 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US20060108574A1

公开(公告)日：2006-05-25

申请号：US11282339

申请日：2005-11-18

申请人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

IPC分类号： H01L29/06 ,  H01L31/0328

CPC分类号： H01L31/18 ,  B82Y20/00 ,  G02F1/017

摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

公开(公告)号：US09270381B2

公开(公告)日：2016-02-23

申请号：US13301814

申请日：2011-11-22

申请人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Duk Jun Kim ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Eun Soo Nam

发明人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Duk Jun Kim ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Eun Soo Nam

IPC分类号： H04B10/06 ,  H04B10/04 ,  H04B10/548 ,  H04B10/077 ,  H04B10/588 ,  H04B10/61 ,  H04L27/20 ,  H04L27/26

CPC分类号： H04B10/548 ,  H04B10/0775 ,  H04B10/588 ,  H04B10/613 ,  H04B10/6165 ,  H04L27/2096 ,  H04L27/2613 ,  H04L27/2657 ,  H04L27/2675 ,  H04L27/2692 ,  H04L27/2697

摘要： Disclosed are a method and an apparatus for transmitting and receiving coherent optical OFDM. The apparatus includes: a transmitted OFDM digital signal processing unit outputting an in-phase (I) component digital signal and a quadrature phase (Q) component digital signal; a digital-analog converter converting the in-phase (I)-component digital signal and the quadrature-phase (Q)-component digital signal into an in-phase (I)-component analog signal and a quadrature-phase (Q)-component analog signal, respectively; an adder adding an additional pilot tone signal to each of the in-phase (I)-component analog signal and the quadrature-phase (Q)-component analog signal outputted from the digital-analog converter; and an optical I/Q modulator up-converting the in-phase (I)-component analog signal added with the additional pilot tone signal and the quadrature-phase (Q)-component analog signal added with the additional pilot tone signal to an optical domain to output a coherent optical OFDM signal including the additional pilot tone signal.

摘要翻译： 公开了用于发送和接收相干光OFDM的方法和装置。 该装置包括：发送的OFDM数字信号处理单元，输出同相（I）分量数字信号和正交相位（Q）分量数字信号; 将同相（I）分量数字信号和正交相位（Q））数字信号转换为同相（I）分量模拟信号和正交相位（Q）分量数字信号的数模转换器， 分量模拟信号; 对从数模转换器输出的同相（I）分量模拟信号和正交相（Q））模拟信号中的每一个加上附加导频音信号的加法器; 以及光学I / Q调制器，将添加有附加导频音信号的同相（I）分量模拟信号和加上附加导频音信号的正交相位（Q））模拟信号上变频到光 域以输出包括附加导频音信号的相干光OFDM信号。

公开(公告)号：US09170333B2

公开(公告)日：2015-10-27

申请号：US13334111

申请日：2011-12-22

申请人： Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

发明人： Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC分类号： H04N13/02 ,  G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  G01S7/487 ,  G01S7/491 ,  H04N13/00

CPC分类号： G01S17/89 ,  G01S7/4813 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/487 ,  G01S7/4912 ,  H04N13/106 ,  H04N13/211 ,  H04N13/254 ,  H04N13/296

摘要： Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

摘要翻译： 公开了一种动态范围三维图像的系统，包括：光检测器，其包括能够控制光放大增益的增益控制端; 像素检测模块，用于通过接收光学检测器的输出来检测用于配置图像的像素信号; 高动态范围（HDR）生成模块，用于通过产生指示像素信号的饱和度的信号来获取动态范围图像，并且基于由像素检测模块检测的像素信号组合像素信号; 以及增益控制信号生成模块，其基于表示像素信号的饱和度的信号的大小，生成用于向光检测器的增益控制端子提供所需电压的输出信号。

公开(公告)号：US08592247B2

公开(公告)日：2013-11-26

申请号：US13273257

申请日：2011-10-14

申请人： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L21/00

CPC分类号： H01L31/107 ,  H01L31/184 ,  Y02E10/544

摘要： A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

摘要翻译： 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。