摘要:
A step-down circuit generates a second power supply lower than a first power supply. The step-down circuit includes an output terminal connected to a load circuit, an output transistor connected between the first power supply and the output terminal, and having a gate terminal connected to a first node, a monitor transistor connected between the first power supply and a second node, and having a gate terminal connected to the first node, and a feedback circuit which sets a gate voltage of the output transistor in accordance with a difference between a voltage obtained by dividing a voltage of the second node and a reference voltage. A size of the monitor transistor is changed in accordance with an operation mode of the load circuit.
摘要:
A rubber composition, which comprises 100 parts by weight of a rubber mixture consisting of 70-95 wt. % of solid rubber and 30-5 wt. % of liquid rubber reactive on the solid rubber, and 450-1,000 parts by weight of magnetic powder. The rubber composition has an improved processability by adding liquid rubber reactive on solid rubber to the conventional magnetic powder-containing rubber, without any deterioration of physical properties proper to the rubber, while maintaining a high magnetic force proper to the magnetic powder, keeping the lower viscosity of rubber compound and holding distinguished heat resistance and flexibility of moldings.
摘要:
A semiconductor device to which active drive current programming is applied, comprising current load cells each having a current load and a current load driving circuit, which are arranged in a matrix, capable of reducing the circuit scale of a current driver with little change made in the structure of the current load driving circuit, and a driving method of the same. A current load cell (113, 114) includes a current load driving circuit which is provided with a transistor (115) connected in series with a current load (122) between first and second power supplies (109, 110); a capacitance (116) connected between the control terminal of the transistor (115) and the first power supply (109); and switches (117, 118) connected between the control terminal of the transistor (115) and a corresponding data line. The output (101) of a current driver is connected to a plurality of data lines via a selector (123, 124), and the plural data lines connected to one output of the current driver via the selector and at least one of the switches of each of the current load cells corresponding to the respective data lines are drive-controlled in a time division manner during one horizontal period.
摘要:
A semiconductor device is capable of suppressing variations of a current or a voltage to be supplied to an external circuit. The semiconductor device has a plurality of unit areas arrayed in one direction, and components in the unit areas are arranged in the same shape and the same layout in the unit areas. A holding capacitor for holding a voltage is surrounded by an interconnect kept at ground potential. Interconnects at ground potential are inserted in areas where reference current interconnects for supplying reference currents to functional blocks (1-bit DCC circuit regions) and gradation digital data interconnects and storage timing signal interconnects cross each other vertically, the interconnects being disposed between these reference current interconnects, gradation digital data interconnects and storage timing signal interconnects.
摘要:
A method for purifying an electronic item material, which comprises dissolving an electronic item material or its intermediate product in an organic solvent and having the solution contacted with activated clay at a temperature of 65° C. to 200° C.
摘要:
A specifying circuit specifies either the first masking method or the second masking method. A first generation circuit generates a signal corresponding to the first method. A second generation circuit generates a signal corresponding to the second method. A third generation circuit generates a write pulse signal on the basis of the output signal of the first generation circuit in response to the specification of the first masking method made by the specifying circuit and on the basis of the output signal of the second generation circuit in response to the specification of the second masking method made by the specifying circuit.
摘要:
Disclosed is a switched capacitor type D/A converter, which comprises: an operational amplifier; a plurality of capacitors; a plurality of first switches which alternatively change connection thereof dependently on whether the filter is in an output mode or a reset mode so that the filter realizes an offset canceling function; a voltage source; and a second switch for directly connecting an output of said operational amplifier with said voltage source at a beginning of the reset mode.
摘要:
Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要:
According to one embodiment, the semiconductor memory includes a memory cell array which includes memory cells to store data, a buffer circuit which includes latches, each of the latches including transistors as control elements and a flip-flop, and a control circuit which turns off the transistors to deactivate one or more of the latches.
摘要:
According to one embodiment, a threshold detecting method for detecting threshold values of nonvolatile semiconductor memory cells comprises applying a preset voltage to a word line connected to the memory cells, and performing bit-line sense at two different timings during discharging of one of a bit line connected to the memory cells and a node corresponding to the bit line, while a potential of the word line is kept constant.