公开(公告)号：US07184893B2

公开(公告)日：2007-02-27

申请号：US09776708

申请日：2001-02-05

申请人： Richard D. Cramer ,  Robert D. Clark

发明人： Richard D. Cramer ,  Robert D. Clark

IPC分类号： G01N33/48 ,  G06F7/00 ,  G06G7/48

CPC分类号： C40B50/02 ,  B01J2219/007 ,  C40B30/02 ,  G06F19/704 ,  Y10S707/99943

摘要： The use for biological screening purposes of a subset (library) of a large combinatorially accessible chemical universe increases the efficiency of the screening process only if the subset contains members representative of the total diversity of the universe. In order to insure inclusion in the subset of molecules representing the total diversity of the universe under consideration, valid molecular descriptors which quantitatively reflect the diversity of the molecules in the universe are required. A unique validation method is used to examine both a new three dimensional steric metric and some prior art metrics. With this method, the relative usefulness/validity of individual metrics can be ascertained from their application to randomly selected literature data sets. By the appropriate application of validated metrics, the method of this invention selects a subset of a combinatorial accessible chemical universe such that the molecules of the subset are representative of all the diversity present in the universe and yet do not contain multiple members which represent the same diversity (oversample). The use of the neighborhood definition of a validated metric may also be used to combine (without oversampling the same diversity) any number of combinatorial screening libraries.

摘要翻译： 用于大型组合可访问化学宇宙的子集（库）的生物筛选目的仅在子集包含代表宇宙总体多样性的成员时提高筛选过程的效率。 为了确保包含在表示所考虑的宇宙总体多样性的分子子集中，需要定量反映宇宙中分子多样性的有效分子描述符。 一种独特的验证方法用于检查新的三维空间度量和一些现有技术的度量。 使用这种方法，可以从其应用于随机选择的文献数据集中确定各个度量的相对有用性/有效性。 通过适当应用经验证的度量，本发明的方法选择组合可访问化学宇宙的子集，使得该子集的分子代表存在于宇宙中的所有分集，但不包含表示相同的多个成员 多样性（过度抽样）。 使用验证度量的邻域定义也可以用于组合（不过采样相同的多样性）任意数量的组合筛选库。

公开(公告)号：US5090600A

公开(公告)日：1992-02-25

申请号：US728827

申请日：1991-07-09

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： B65D47/28 ,  G01F11/16

CPC分类号： B65D47/283 ,  G01F11/16

摘要： A fluid pressure opened reclosable pouring spout for a flexible container is formed by a sleeve assembly axially inserted into the exit end of the pouring spout for normally closing the latter. The sleeve assembly comprises a first sleeve bonded to the inner surface of the pouring spout of the exit end portion which contains an annular inwardly projecting flange-like wall slidably receiving a piston sleeve valve normally sealing with the outer end of the first sleeve and biased to an open position by a spring or weight when the walls of the container are manually squeezed, to apply liquid pressure against the closed end of the piston sleeve valve. The wall of the piston sleeve valve is provided, adjacent its outer end, with a circumferential row of apertures for discharging liquid when the piston sleeve valve is opening. The inward end of the piston sleeve valve is longitudinally slotted in circumferential spaced relation for inserting the sleeve valve into the wall sleeve.

摘要翻译： 用于柔性容器的流体压力打开的可重新封闭的倾倒口由轴向插入到倾倒咀的出口端的套筒组件形成，用于通常关闭后者。 套筒组件包括接合到出口端部的倾倒嘴的内表面上的第一套筒，其包含一向内伸出的环形向内突出的凸缘状壁，该壁可滑动地容纳通常与第一套筒外端密封的活塞套筒阀， 当容器的壁被手动挤压时通过弹簧或重量打开位置，以将液压施加到活塞套筒阀的封闭端。 活塞套筒阀的壁邻近其外端设置有周向排的孔，用于当活塞套筒阀打开时排出液体。 活塞套筒阀的向内端部以周向隔开的方式纵向开槽，用于将套筒阀插入壁套管中。

公开(公告)号：US08962078B2

公开(公告)日：2015-02-24

申请号：US13531397

申请日：2012-06-22

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： C23C16/30

CPC分类号： C23C16/34 ,  C23C16/308 ,  C23C16/347 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45531 ,  C23C16/45534

摘要： A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.

摘要翻译： 提供了一种用于在基板上沉积电介质膜的方法。 根据一个实施例，该方法包括在处理室中提供衬底，将衬底暴露于气态前体以在衬底上形成吸附层，将吸附层暴露于含氧气体，含氮气体或 含氧和含氮气体或其组合，以在衬底上形成电介质膜，通过卤化氢前体气体的分解反应在处理室中产生卤化氢气体，并将电介质膜暴露于 卤化氢气体，以从电介质膜去除污染物。

公开(公告)号：US20100248464A1

公开(公告)日：2010-09-30

申请号：US12719690

申请日：2010-03-08

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/28

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/49 ,  H01L29/513

摘要： A method is provided for forming a high-k gate stack with a reduced effective oxide thickness (EOT) for a semiconductor device. The method includes providing a silicon-containing substrate, forming an interface layer on the silicon-containing substrate, where the interface layer has a first equivalent oxide thickness, depositing a first high-k film on the interface layer, and heat-treating the first high-k film and the interface layer at a temperature that forms a modified interface layer, where the modified interface layer has a second equivalent oxide thickness that is equal to or lower than the first equivalent oxide thickness. The method further includes depositing a second high-k film on the modified interface layer. According to one embodiment, the first high-k film includes lanthanum oxide and the second high-k film includes hafnium silicate.

摘要翻译： 提供一种用于形成半导体器件的具有降低的有效氧化物厚度（EOT）的高k栅极堆叠的方法。 该方法包括提供含硅衬底，在含硅衬底上形成界面层，其中界面层具有第一等效氧化物厚度，在界面层上沉积第一高k膜，并将第一 高k膜和界面层，在形成改性界面层的温度下，其中改性界面层具有等于或低于第一等效氧化物厚度的第二等效氧化物厚度。 该方法还包括在修改的界面层上沉积第二高k膜。 根据一个实施方案，第一高k膜包括氧化镧，第二高k膜包括硅酸铪。

公开(公告)号：US07772073B2

公开(公告)日：2010-08-10

申请号：US11864514

申请日：2007-09-28

申请人： Robert D. Clark ,  Gerrit J. Leusink

发明人： Robert D. Clark ,  Gerrit J. Leusink

IPC分类号： H01L21/336

CPC分类号： H01L21/3141 ,  H01L29/1033 ,  H01L29/513 ,  H01L29/517

摘要： A method is provided for forming a semiconductor device containing a buried threshold voltage adjustment layer. The method includes providing a substrate containing an interface layer, depositing a first high-k film on the interface layer, depositing a threshold voltage adjustment layer on the first high-k film, and depositing a second high-k film on the threshold voltage adjustment layer such that the threshold voltage adjustment layer is interposed between the first and second high-k films. The semiconductor device containing a patterned gate stack is described.

摘要翻译： 提供一种用于形成包含掩埋阈值电压调节层的半导体器件的方法。 该方法包括提供包含界面层的衬底，在界面层上沉积第一高k膜，在第一高k膜上沉积阈值电压调节层，以及在阈值电压调节上沉积第二高k膜 使得阈值电压调整层插入在第一和第二高k膜之间。 描述了包含图案化栅极堆叠的半导体器件。

公开(公告)号：US07767262B2

公开(公告)日：2010-08-03

申请号：US11537245

申请日：2006-09-29

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： C23C16/00

CPC分类号： C23C16/308 ,  C23C16/45529 ,  C23C16/45542

摘要： A method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the nitrided high-k film on the substrate by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. The oxygen-containing film and the nitrogen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table, and optionally aluminum, silicon, or aluminum and silicon. According to one embodiment, the method includes forming a nitrided hafnium based high-k film. The nitrided high-k film can be formed by atomic layer deposition (ALD) or plasma-enhanced ALD (PEALD).

摘要翻译： 一种通过在处理室中设置衬底并在衬底上形成氮化的高k膜而形成氮化的高k膜的方法，其方法是a）沉积含氮膜，b）沉积含氧膜，其中 步骤a）和b）以任意次数进行，以便氧化至少一部分含氮膜的厚度。 含氧膜和含氮膜含有选自碱土金属元素，稀土元素和元素周期表IVB族元素中的一种或多种金属元素，以及任选的铝，硅或铝和硅。 根据一个实施例，该方法包括形成氮化铪基高k膜。 氮化高k膜可以通过原子层沉积（ALD）或等离子体增强型ALD（PEALD）形成。

公开(公告)号：US07713868B2

公开(公告)日：2010-05-11

申请号：US11730340

申请日：2007-03-30

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/44 ,  H01L21/469

CPC分类号： C23C16/34 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/7845

摘要： A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the metal precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the metal precursor with a second reactivity characteristic such that a property of the metal nitride film formed on the substrate changes to provide the strained metal nitride film.

摘要翻译： 用于形成应变金属氮化物膜的方法和包含应变金属氮化物膜的半导体器件。 该方法包括将衬底暴露于含有金属前体的气体，将衬底暴露于含有等离子体源的等离子体源激活的含氮前驱物的气体，并配置为与第一反应特性与金属前体反应， 以及将所述衬底暴露于由所述等离子体源激活的含有所述氮前体的气体中，所述气体以与所述第一水平不同的等离子体功率的第二水平并且被配置为与所述金属前体反应具有第二反应特性，使得所述金属氮化物膜的性质 在基板上形成的变化以提供应变金属氮化物膜。

公开(公告)号：US07651961B2

公开(公告)日：2010-01-26

申请号：US11730288

申请日：2007-03-30

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185 ,  H01L29/78 ,  H01L29/7843

摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film.

摘要翻译： 形成应变SiN膜的方法和包含应变SiN膜的半导体器件。 该方法包括将衬底暴露于包括硅前体的气体，将等离子体功率的第一级别将衬底暴露于含有由等离子体源激活的氮前体的气体，并配置为与第一反应特性与硅前体反应， 以及将所述衬底暴露于由所述等离子体源激活的含有所述氮前体的气体中，所述气体处于与所述第一水平不同的第二等离子体功率水平，且被配置成与所述硅前体反应，具有第二反应特性，使得所述氮化硅膜的性质 在基板上形成变化以提供应变氮化硅膜。

公开(公告)号：US20090246974A1

公开(公告)日：2009-10-01

申请号：US12058585

申请日：2008-03-28

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/31

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02326 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/7843

摘要： A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing an oxygen-containing or an oxygen- and nitrogen-containing gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots, wherein the plane antenna member faces the substrate surface containing the silicon nitride film. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film.

摘要翻译： 一种形成应力钝化膜的方法。 在一个实施例中，该方法包括在衬底上的集成电路结构上沉积氮化硅膜，并通过将氮化硅膜暴露于含有氧或氧的氮的工艺气体将氧包埋在氮化硅膜的表面中， 以及通过经由具有多个槽的平面天线构件的基于微波照射的等离子体诱导解离而激发的含氮气体，其中，所述平面天线构件面向包含所述氮化硅膜的所述基板表面。 该方法还包括对含氧的氮化硅膜进行热处理以形成应力氮氧化硅膜。

公开(公告)号：US20090246973A1

公开(公告)日：2009-10-01

申请号：US12058570

申请日：2008-03-28

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/31

CPC分类号： H01L21/3144 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02326 ,  H01L21/3115 ,  H01L21/3185 ,  H01L29/7843

摘要： A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing oxygen radicals formed by non-ionizing electromagnetic radiation induced dissociation of an oxygen-containing gas or an oxygen- and nitrogen-containing gas. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film.

摘要翻译： 一种形成应力钝化膜的方法。 在一个实施例中，该方法包括在衬底上的集成电路结构上沉积氮化硅膜，并且通过将氮化硅膜暴露于含有由非电离电磁形成的氧自由基的工艺气体而将氧气包埋在氮化硅膜的表面中 辐射诱导含氧气体或含氧和含氮气体的离解。 该方法还包括对含氧的氮化硅膜进行热处理以形成应力氮氧化硅膜。