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    Solid-state imaging device and manufacturing method of the same, and electronic apparatus
    35.
    发明授权
    Solid-state imaging device and manufacturing method of the same, and electronic apparatus 有权
    固态成像装置及其制造方法以及电子装置

    公开(公告)号：US09105539B2

    公开(公告)日：2015-08-11

    申请号：US14372413

    申请日：2013-01-11

    Applicant: SONY CORPORATION

    Inventor： Yuki Miyanami

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

    Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

    Abstract translation: 本公开内容涉及能够更可靠地抑制混色发生的固态成像装置及其制造方法以及电子装置。 在PD之间形成沟槽，以便在半导体衬底的光接收表面侧开口，在其上形成有多个PD，每个PD接收光以产生电荷，绝缘膜嵌入沟槽中， 绝缘膜层叠在半导体基板的背面侧。 然后，形成遮光部分，以在层叠在绝缘膜上并且在对应于沟槽的位置处具有向半导体衬底突出的凸形。 本技术可以应用于背面照射型CMOS固态成像装置。

    IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
    37.
    发明申请
    IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS 有权
    图像拾取装置和电子装置

    公开(公告)号：US20150002716A1

    公开(公告)日：2015-01-01

    申请号：US14313409

    申请日：2014-06-24

    Applicant: Sony Corporation

    Inventor： Yuki Miyanami

    IPC: H04N5/3745

    CPC classification number: H04N5/3745 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/3742

    Abstract: An image pickup device includes on a silicon layer: a photodiode provided on each pixel basis to perform photoelectric conversion to generate a charge depending on the light receiving amount; a floating diffusion section configured to store the charge generated by the photodiode; and a transistor configured to output a pixel signal at a voltage in accordance with a level of the charge stored in the floating diffusion section, wherein the image pickup device further includes a hermetically-sealed cavity section inside the silicon layer and on at least one of the underside of the floating diffusion section and the underside of a channel body region of the transistor.

    Abstract translation: 图像拾取装置包括在硅层上：基于每个像素提供的光电二极管，以执行光电转换以根据光接收量产生电荷; 浮置扩散部，被配置为存储由所述光电二极管产生的电荷; 以及晶体管，其被配置为根据存储在所述浮动扩散部中的电荷的电平输出电压的像素信号，其中所述图像拾取装置还包括位于所述硅层内部的气密密封腔部分，以及至少一个 浮动扩散部分的下侧和晶体管的沟道体区域的下侧。

    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
    38.
    发明申请
    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS 审中-公开
    固态成像装置及其制造方法及电子设备

    公开(公告)号：US20140001454A1

    公开(公告)日：2014-01-02

    申请号：US13926400

    申请日：2013-06-25

    Applicant: Sony Corporation

    Inventor： Yuki Miyanami ,  Masashi Nakazawa

    IPC: H01L27/30 ,  H01L51/44

    Abstract: There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.

    Abstract translation: 提供了一种固态成像装置，包括半导体基体元件，形成在半导体基底元件上方的有机光电转换层，形成在半导体基底元件上的绝缘层中的接触孔，形成在接触孔中的导电层和 将包括有机光电转换层的光电转换部与半导体基体元件电连接的接触部和与半导体基体元件的接触孔中的导电层自对准形成的接触部，并与导电层 。

    SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    39.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
    固态成像装置，制造固态成像装置和电子装置的方法

    公开(公告)号：US20130200479A1

    公开(公告)日：2013-08-08

    申请号：US13749393

    申请日：2013-01-24

    Applicant: SONY CORPORATION

    Inventor： Yorito Sakano ,  Itaru Oshiyama ,  Yuki Miyanami ,  Takeshi Takeda

    IPC: H01L31/0216 ,  H01L31/0224

    CPC classification number: H01L31/0216 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/0224 ,  H04N5/3591 ,  H04N5/37452

    Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

    Abstract translation: 提供了一种固态成像装置，其包括其中多个单位像素布置在半导体衬底上的像素阵列部分，所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分， 累积光电荷的电荷累积部分，其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。

    Method of manufacturing semiconductor device, and semiconductor device
    40.
    再颁专利
    Method of manufacturing semiconductor device, and semiconductor device 有权

    公开(公告)号：USRE49803E1

    公开(公告)日：2024-01-16

    申请号：US16184766

    申请日：2018-11-08

    Applicant: Sony Corporation

    Inventor： Yuki Miyanami

    IPC: H01L21/337 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/165 ,  H01L29/66

    CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

    Abstract: A method of manufacturing a semiconductor device includes: the first step of forming a gate electrode over a silicon substrate, with a gate insulating film; and the second step of digging down a surface layer of the silicon substrate by etching conducted with the gate electrode as a mask. The method of manufacturing the semiconductor device further includes the third step of epitaxially growing, on the surface of the dug-down portion of the silicon substrate, a mixed crystal layer including silicon and atoms different in lattice constant from silicon so that the mixed crystal layer contains an impurity with such a concentration gradient that the impurity concentration increases along the direction from the silicon substrate side toward the surface of the mixed crystal layer.

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