利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

475 条记录 (耗时 0.039 秒)

    Method of doping a gate electrode of a field effect transistor
    31.
    发明授权
    Method of doping a gate electrode of a field effect transistor 失效
    掺杂场效应晶体管的栅电极的方法

    公开(公告)号：US07491631B2

    公开(公告)日：2009-02-17

    申请号：US11757660

    申请日：2007-06-04

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    IPC分类号： H01L21/425

    CPC分类号： H01L29/4983 ,  H01L29/4908 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/78621 ,  Y10S977/742 ,  Y10S977/847

    摘要： A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.

    摘要翻译： 一种制造结构并制造相关半导体晶体管和新型半导体晶体管结构的方法。 制造该结构的方法包括：提供具有顶表面的基底; 在所述基板的顶表面上形成岛，所述岛的顶表面平行于所述基底的顶表面，所述岛的侧壁在所述岛的顶表面和所述基底的顶表面之间延伸; 在岛的侧壁上形成多个碳纳米管; 并且进行离子注入，所述离子注入在所述岛状体和所述碳纳米管所掩盖的基板的区域中贯穿所述岛并阻止其侵入所述基板。

    Carbon Nanotubes As Low Voltage Field Emission Sources for Particle Precipitators
    33.
    发明申请
    Carbon Nanotubes As Low Voltage Field Emission Sources for Particle Precipitators 失效
    碳纳米管作为低电场场发射源用于颗粒沉淀器

    公开(公告)号：US20080257156A1

    公开(公告)日：2008-10-23

    申请号：US12125442

    申请日：2008-05-22

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    IPC分类号： B03C3/38 ,  B03C3/00

    CPC分类号： B03C3/41 ,  B03C3/60 ,  B03C2201/10 ,  Y10S977/742

    摘要： An air particle precipitator and a method of air filtration comprise a housing unit; a first conductor in the housing unit; a second conductor in the housing unit; and a carbon nanotube grown on the second conductor. Preferably, the first conductor is positioned opposite to the second conductor. The air particle precipitator further comprises an electric field source adapted to apply an electric field to the housing unit. Moreover, the carbon nanotube is adapted to ionize gas in the housing unit, wherein the ionized gas charges gas particulates located in the housing unit, and wherein the first conductor is adapted to trap the charged gas particulates. The air particle precipitator may further comprise a metal layer over the carbon nanotube.

    摘要翻译： 空气颗粒除尘器和空气过滤方法包括壳体单元; 住房单元中的第一个导体; 壳体单元中的第二导体; 和在第二导体上生长的碳纳米管。 优选地，第一导体与第二导体相对定位。 空气粒子除尘器还包括适于向壳体单元施加电场的电场源。 此外，碳纳米管适于使壳体单元中的气体电离，其中电离气体对位于壳体单元中的气体微粒进行充电，并且其中第一导体适于捕集带电气体微粒。 空气颗粒除尘器还可以包括在碳纳米管上的金属层。

    Carbon nanotubes as low voltage field emission sources for particle precipitators
    34.
    发明授权
    Carbon nanotubes as low voltage field emission sources for particle precipitators 失效
    碳纳米管作为颗粒除尘器的低电压场发射源

    公开(公告)号：US07402194B2

    公开(公告)日：2008-07-22

    申请号：US11161220

    申请日：2005-07-27

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III

    IPC分类号： B03C3/60

    CPC分类号： B03C3/41 ,  B03C3/60 ,  B03C2201/10 ,  Y10S977/742

    摘要： An air particle precipitator and a method of air filtration include a housing unit; a first conductor in the housing unit; a second conductor in the housing unit; and a carbon nanotube grown on the second conductor. Preferably, the first conductor is positioned opposite to the second conductor. The air particle precipitator further includes an electric field source adapted to apply an electric field to the housing unit. Moreover, the carbon nanotube is adapted to ionize gas in the housing unit, wherein the ionized gas charges gas particulates located in the housing unit, and wherein the first conductor is adapted to trap the charged gas particulates. The air particle precipitator may further include a metal layer over the carbon nanotube.

    摘要翻译： 空气颗粒除尘器和空气过滤方法包括壳体单元; 住房单元中的第一个导体; 壳体单元中的第二导体; 和在第二导体上生长的碳纳米管。 优选地，第一导体与第二导体相对定位。 空气粒子除尘器还包括适于向壳体单元施加电场的电场源。 此外，碳纳米管适于使壳体单元中的气体电离，其中电离气体对位于壳体单元中的气体微粒进行充电，并且其中第一导体适于捕集带电气体微粒。 空气粒子沉淀器还可以包括在碳纳米管上的金属层。

    Semiconductor transistors with contact holes close to gates
    35.
    发明授权
    Semiconductor transistors with contact holes close to gates 有权
    具有靠近门的接触孔的半导体晶体管

    公开(公告)号：US07381610B2

    公开(公告)日：2008-06-03

    申请号：US11163966

    申请日：2005-11-04

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  William R. Tonti

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  William R. Tonti

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/76897 ,  H01L21/28052 ,  H01L21/28061 ,  H01L21/28114

    摘要： A structure and a method for forming the same. The structure includes (a) a semiconductor layer including a channel region disposed between first and second S/D regions; (b) a gate dielectric region on the channel region; (c) a gate region on the gate dielectric region and electrically insulated from the channel region by the gate dielectric region; (d) a protection umbrella region on the gate region, wherein the protection umbrella region comprises a first dielectric material, and wherein the gate region is completely in a shadow of the protection umbrella region; and (e) a filled contact hole (i) directly above and electrically connected to the second S/D region and (ii) aligned with an edge of the protection umbrella region, wherein the contact hole is physically isolated from the gate region by an inter-level dielectric (ILD) layer which comprises a second dielectric material different from the first dielectric material.

    摘要翻译： 一种结构及其形成方法。 该结构包括（a）包括设置在第一和第二S / D区之间的沟道区的半导体层; （b）沟道区上的栅介质区; （c）栅极电介质区域上的栅极区域，并且通过栅极电介质区域与沟道区域电绝缘; （d）栅极区域上的保护伞区域，其中保护伞区域包括第一介电材料，并且其中栅极区域完全处于保护伞区域的阴影中; 和（e）直接在第二S / D区域上方并电连接到第二S / D区域的填充接触孔（i）和（ii）与保护伞区域的边缘对准，其中接触孔通过一个 层间介电层（ILD）层，其包括不同于第一介电材料的第二电介质材料。

    Implantation of gate regions in semiconductor device fabrication
    40.
    发明授权
    Implantation of gate regions in semiconductor device fabrication 失效
    在半导体器件制造中植入栅极区域

    公开(公告)号：US07118997B2

    公开(公告)日：2006-10-10

    申请号：US10905977

    申请日：2005-01-28

    申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III.

    发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III.

    IPC分类号： H01L21/425

    CPC分类号： H01L29/66545 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/28035 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/6659

    摘要： A method for implanting gate regions essentially without implanting regions of the semiconductor layer where source/drain regions will be later formed. The method includes the steps of (a) providing (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, (iii) a gate region on the gate dielectric layer, wherein the gate region is electrically insulated from the semiconductor layer by the gate dielectric layer; (b) forming a resist layer on the gate dielectric layer and the gate region; (c) removing a cap portion of the resist layer essentially directly above the gate region essentially without removing the remainder of the resist layer; and (d) implanting the gate region essentially without implanting the semiconductor layer.

    摘要翻译： 一种注入栅极区域的方法，其基本上不注入将在其后形成源极/漏极区域的半导体层的区域。 该方法包括以下步骤：（i）在半导体层上提供（i）半导体层，（ii）栅极电介质层，（iii）栅极介电层上的栅极区域，其中栅极区域与 半导体层由栅介质层; （b）在栅介质层和栅极区上形成抗蚀剂层; （c）基本上直接在栅极区域上方去除抗蚀剂层的盖部分，而不去除抗蚀剂层的其余部分; 和（d）基本上不注入半导体层来注入栅极区域。