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    Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection
    4.
    发明授权
    Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection 失效
    采用光端点检测的半晶片临界尺寸监测

    公开(公告)号：US5427878A

    公开(公告)日：1995-06-27

    申请号：US243558

    申请日：1994-05-16

    申请人： Daniel A. Corliss

    发明人： Daniel A. Corliss

    IPC分类号： H01L21/30 ,  G01B11/06 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  G03F7/26

    CPC分类号： G01B11/0683

    摘要： A method for across-wafer critical dimension uniformity performance monitoring in the manufacture of semiconductor devices employs a number of optical endpoint detectors at sites at the wafer face which are spaced across the wafer face. Each optical endpoint detector is able to directly measure the end point of the process step at its site. One of these optical endpoint detectors is used to control the process, and when the endpoint has been reached for this site the process completion time is predicted and this completion time is used to control the processing equipment. For example, if the process step being monitored is the development of photoresist, then the developing operation is ended based upon this calculated completion time derived from the detected endpoint for the control site. The other sites are used to monitor across-wafer performance. The output of each of these other optical detectors is used to determine the endpoint for each monitor site, and these endpoints are compared with the control endpoint to determine across-wafer critical dimension performance and conformance to specification. The wafers can thus be flagged if out-of-limit, and need not be processed through subsequent steps.

    摘要翻译： 在半导体器件制造中的跨晶片临界尺寸均匀性性能监测的方法在晶片表面的位置上采用多个光学终点检测器，其在晶片表面上间隔开。 每个光学终端检测器能够直接测量其现场处理步骤的终点。 这些光端点检测器中的一个用于控制过程，并且当达到该站点的端点时，预测过程完成时间，并且该完成时间用于控制处理设备。 例如，如果正在监测的工艺步骤是光致抗蚀剂的发展，则基于从控制部位的检测到的端点导出的该计算的完成时间结束显影操作。 其他站点用于监控跨晶片性能。 每个这些其他光学检测器的输出用于确定每个监测站点的端点，并将这些端点与控制端点进行比较，以确定跨晶圆临界尺寸性能和符合规范。 因此，如果晶片超出限制，则可以标记晶片，并且不需要通过后续步骤来处理晶片。

    Immersion lithography contamination gettering layer
    5.
    发明授权
    Immersion lithography contamination gettering layer 失效
    浸没光刻污染吸气层

    公开(公告)号：US07807335B2

    公开(公告)日：2010-10-05

    申请号：US11144857

    申请日：2005-06-03

    申请人： Daniel A. Corliss ,  Dario Gil ,  Dario Leonardo Goldfarb ,  Steven John Holmes ,  David Vaclav Horak ,  Kurt Rudolf Kimmel ,  Karen Elizabeth Petrillo ,  Dmitriy Shneyder

    发明人： Daniel A. Corliss ,  Dario Gil ,  Dario Leonardo Goldfarb ,  Steven John Holmes ,  David Vaclav Horak ,  Kurt Rudolf Kimmel ,  Karen Elizabeth Petrillo ,  Dmitriy Shneyder

    IPC分类号： G03F7/26

    CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/162

    摘要： A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

    摘要翻译： 在光致抗蚀剂层中形成图像的方法。 该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层，吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射，不透明区域阻挡光化辐射，透明区域对于光化辐射是透明的，光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成 在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。 污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。

    SEMICONDUCTOR INTRA-FIELD DOSE CORRECTION
    6.
    发明申请
    SEMICONDUCTOR INTRA-FIELD DOSE CORRECTION 有权
    半导体场内剂量校正

    公开(公告)号：US20110017926A1

    公开(公告)日：2011-01-27

    申请号：US12509821

    申请日：2009-07-27

    申请人： Hyung-Rae Lee ,  Dong Hee Yu ,  Sohan Singh Mehta ,  Niall Shepherd ,  Daniel A. Corliss

    发明人： Hyung-Rae Lee ,  Dong Hee Yu ,  Sohan Singh Mehta ,  Niall Shepherd ,  Daniel A. Corliss

    IPC分类号： G21K5/10

    CPC分类号： G03F7/70425 ,  G03F7/70066 ,  G03F7/70558 ,  G03F7/70625

    摘要： A system and method are provided for automatic dose-correction recipe generation, the system including a dose-correction recipe generator, a reticle data unit in signal communication with the recipe generator, a slit data unit in signal communication with the recipe generator, a process data unit in signal communication with the recipe generator, a wafer data unit in signal communication with the recipe generator, a control unit in signal communication with the recipe generator, and an output unit or a storage unit in signal communication with the control unit; and the method including receiving a current reticle data set and a previous reticle data set, receiving a current slit data set and a previous slit data set, receiving a process condition, receiving a wafer condition, automatically generating a dose-correction recipe in accordance with the received reticle, slit, process and wafer information, and controlling a dose in accordance with the generated recipe.

    摘要翻译： 提供了一种用于自动剂量校正配方生成的系统和方法，该系统包括剂量校正配方生成器，与配方生成器进行信号通信的掩模版数据单元，与配方生成器进行信号通信的缝隙数据单元， 与配方生成器进行信号通信的数据单元，与配方生成器进行信号通信的晶片数据单元，与配方生成器进行信号通信的控制单元，以及与控制单元进行信号通信的输出单元或存储单元; 并且所述方法包括接收目前的掩模版数据集和先​​前的掩模版数据集，接收当前狭缝数据集和先​​前的狭缝数据组，接收处理条件，接收晶片条件，根据以下步骤自动生成剂量校正配方 接收到的掩模版，狭缝，处理和晶片信息，以及根据生成的食谱控制剂量。

    FOCUS BLUR MEASUREMENT AND CONTROL METHOD
    7.
    发明申请
    FOCUS BLUR MEASUREMENT AND CONTROL METHOD 审中-公开
    重点测量与控制方法

    公开(公告)号：US20090011346A1

    公开(公告)日：2009-01-08

    申请号：US12210683

    申请日：2008-09-15

    申请人： Christopher P. Ausschnitt ,  Timothy A. Brunner ,  Shahid A. Butt ,  Daniel A. Corliss

    发明人： Christopher P. Ausschnitt ,  Timothy A. Brunner ,  Shahid A. Butt ,  Daniel A. Corliss

    IPC分类号： G03F7/00

    CPC分类号： G03F7/70641 ,  G03F7/70533 ,  G03F7/70625

    摘要： A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies.

    摘要翻译： 一种用于优化光刻图案成像和处理系统中的成像和工艺参数设置的方法。 该方法包括将印刷在光刻抗蚀剂层中的至少一个控制图案的第一组的尺寸相关联，在对应于不同剂量，散焦和模糊灵敏度的图案之上或之内的三个或更多个位置处测量。 该方法然后包括测量印刷在光刻抗蚀剂层中的随后的一组控制图案上的尺寸，位于每个图案上或每个图案上的三个或更多个位置，其中最少三个位置与第一组中测量的位置匹配，并且确定 通过将匹配位置处的尺寸与相关依赖关系进行比较来形成随后的控制模式组相关联的有效剂量，散焦和模糊值。

    Focus blur measurement and control method
    8.
    发明授权
    Focus blur measurement and control method 失效
    聚焦模糊测量和控制方法

    公开(公告)号：US07439001B2

    公开(公告)日：2008-10-21

    申请号：US11206326

    申请日：2005-08-18

    申请人： Christopher P. Ausschnitt ,  Timothy A. Brunner ,  Shahid A. Butt ,  Daniel A. Corliss

    发明人： Christopher P. Ausschnitt ,  Timothy A. Brunner ,  Shahid A. Butt ,  Daniel A. Corliss

    IPC分类号： G03C5/00 ,  G03F9/00

    CPC分类号： G03F7/70641 ,  G03F7/70533 ,  G03F7/70625

    摘要： A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system is disclosed. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies. A method for determining blur, focus and exposure dose error in lithographic imaging is also disclosed.

    摘要翻译： 公开了一种在光刻图案成像和处理系统中优化成像和处理参数设置的方法。 该方法包括将印刷在光刻抗蚀剂层中的至少一个控制图案的第一组的尺寸相关联，在对应于不同剂量，散焦和模糊灵敏度的图案之上或之内的三个或更多个位置处测量。 该方法然后包括测量印刷在光刻抗蚀剂层中的随后的一组控制图案上的尺寸，位于每个图案上或每个图案上的三个或更多个位置，其中最少三个位置与在第一组中测量的位置匹配，并且确定 通过将匹配位置处的尺寸与相关依赖关系进行比较来形成随后的控制模式组相关联的有效剂量，散焦和模糊值。 还公开了用于确定光刻成像中的模糊，聚焦和曝光剂量误差的方法。

    METHOD TO REDUCE MECHANICAL WEAR OF IMMERSION LITHOGRAPHY APPARATUS
    9.
    发明申请
    METHOD TO REDUCE MECHANICAL WEAR OF IMMERSION LITHOGRAPHY APPARATUS 审中-公开
    降低机械磨损的方法

    公开(公告)号：US20080138631A1

    公开(公告)日：2008-06-12

    申请号：US11567394

    申请日：2006-12-06

    申请人： Kaushal S. Patel ,  Daniel A. Corliss

    发明人： Kaushal S. Patel ,  Daniel A. Corliss

    IPC分类号： B32B9/00

    CPC分类号： C23C30/00 ,  G03F7/70341 ,  G03F7/70916 ,  G03F7/7095

    摘要： A protective coating is provided for components of an immersion lithography tool, in which at least a portion of a component exposed to the immersion fluid is protected by a thin, hard protective coating, comprising materials such as silicon carbide, diamond, diamond-like carbon, boron nitride, boron carbide, tungsten carbide, aluminum oxide, sapphire, titanium nitride, titanium carbonitride, titanium aluminum nitride and titanium carbide. The protective coating may be formed by methods such as CVD, PECVD, APCVD, LPCVD, LECVD, PVD, thin-film evaporation, sputtering, and thermal annealing in the presence of a gas. The protective coating preferably has a hardness greater than a Knoop hardness of about 1000 and more preferably greater than about 2000, or a Moh hardness greater than about 7, more preferably greater than about 9. The protective coating minimizes defects due to mechanical wear of scanner components.

    摘要翻译： 为浸没式光刻工具的组件提供保护涂层，其中暴露于浸没流体的部件的至少一部分被薄的硬质保护涂层保护，其包括诸如碳化硅，金刚石，类金刚石碳 ，氮化硼，碳化硼，碳化钨，氧化铝，蓝宝石，氮化钛，碳氮化钛，氮化铝钛和碳化钛。 可以通过诸如CVD，PECVD，APCVD，LPCVD，LECVD，PVD，薄膜蒸发，溅射和在气体存在下的热退火的方法形成保护涂层。 保护涂层优选具有大于Knoop硬度大约1000，更优选大于约2000的硬度，或大于约7，更优选大于约9的莫氏硬度。保护涂层使由于扫描仪的机械磨损引起的缺陷最小化 组件。

    Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography
    10.
    发明授权
    Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography 失效
    用于直接校准对准测量系统到实际半导体晶圆工艺形貌的结构和方法

    公开(公告)号：US5280437A

    公开(公告)日：1994-01-18

    申请号：US723170

    申请日：1991-06-28

    申请人： Daniel A. Corliss

    发明人： Daniel A. Corliss

    IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/66 ,  G01B11/00

    CPC分类号： H01L22/12

    摘要： To calibrate a registration measurement system for use in semiconductor fabrication processes, a calibration structure is provided. The calibration structure includes at least one zero offset registration structure and a plurality of non-zero offset registration structures. By measuring the displacement of the zero registration, structure at 0.degree. and 180.degree., the tool induced shift (TIS) of the registration measurement system may be determined. Then, by measuring the displacement of the zero offset registration structure at 0.degree., 90.degree., 180.degree., and 270.degree. the initial TIS determination is verified and the presence or absence of astigmatism is established. When TIS and astigmatism have been accounted for, all of the registration structures, both zero and non-zero, are measured at an angular orientation of 0.degree. to determine the systematic errors present in the measurement. Once these errors are determined, the registration measurement system is calibrated to alleviate these errors.

    摘要翻译： 为了校准用于半导体制造工艺的配准测量系统，提供校准结构。 校准结构包括至少一个零偏移注册结构和多个非零偏移注册结构。 通过测量零位置的位移，结构在0度和180度，可以确定对准测量系统的刀具感应位移（TIS）。 然后，通过测量零点偏移对准结构在0度，90度，180度和270度的位移来验证初始TIS确定，并且确定是否存在像散。 当考虑到TIS和散光时，所有的归零结构（零和非零）均以0度的角度方向进行测量，以确定测量中存在的系统误差。 一旦确定了这些错误，校准注册测量系统以减轻这些错误。