公开(公告)号：US20060105510A1

公开(公告)日：2006-05-18

申请号：US11179971

申请日：2005-07-11

申请人： Jae Mun ,  Jong Lim ,  Woo Chang ,  Hong Ji ,  Ho Ahn ,  Hae Kim

发明人： Jae Mun ,  Jong Lim ,  Woo Chang ,  Hong Ji ,  Ho Ahn ,  Hae Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L29/7785

摘要： Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased. Also, the maximum voltage limit applied to the transistor is increased due to increases in gate turn-on voltage and threshold voltage and a reduction in parallel conduction element. As a result, the power handling capability of the transistor can be improved, thus improving a high-power low-distortion characteristic and an isolation characteristic.

摘要翻译： 提供半导体器件的晶体管及其制造方法。 晶体管包括：设置在半绝缘衬底上并具有缓冲层的外延衬底，第一Si平面掺杂层，第一导电层，第二Si平面掺杂层和第二导电层， 所述第二Si平面掺杂层具有与所述第一Si平面掺杂层的掺杂浓度不同的掺杂浓度; 源极电极和漏电极，其扩散到所述第一Si平面掺杂层中至预定深度并且设置在所述第二导电层的两侧以形成欧姆接触; 以及设置在所述源极和漏极之间的所述第二导电层上并与所述第二导电层接触的栅电极。 在这种结构中，可以提高晶体管的隔离和开关速度。 此外，施加到晶体管的最大电压限制由于栅极导通电压和阈值电压的增加以及并联导通元件的减小而增加。 结果，可以提高晶体管的功率处理能力，从而提高高功率低失真特性和隔离特性。

公开(公告)号：US20050122463A1

公开(公告)日：2005-06-09

申请号：US11002888

申请日：2004-12-03

申请人： Yong Byun ,  Moo Park ,  Sung Jung ,  Sung Kang ,  Jong Kim ,  Young Jeung ,  Sang Lee ,  Sang Park ,  Hun Choo ,  Hyug Kweon ,  Kyung Chae ,  Hae Son ,  Sang Shin ,  Jong Lim ,  Wan Kim ,  Young Jeung ,  Joung Ryu ,  Ji Uh ,  Im Lee

发明人： Yong Byun ,  Moo Park ,  Sung Jung ,  Sung Kang ,  Jong Kim ,  Young Jeung ,  Sang Lee ,  Sang Park ,  Hun Choo ,  Hyug Kweon ,  Kyung Chae ,  Hae Son ,  Sang Shin ,  Jong Lim ,  Wan Kim ,  Young Jeung ,  Joung Ryu ,  Ji Uh ,  Im Lee

IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1341

CPC分类号： G02F1/1339 ,  G02F1/1309 ,  G02F1/1333 ,  G02F1/133351 ,  G02F1/13394 ,  G02F1/1341 ,  G02F2001/133354 ,  G02F2001/133388 ,  G02F2001/13415

摘要： Disclosed is a system for fabricating a liquid crystal display using liquid crystal dropping and a method of fabricating a liquid crystal display using the same. The present invention includes a liquid crystal forming line dropping liquid crystals on the first substrate, a sealant forming line forming the sealant on the second substrate, and a bonding and hardening line bonding the two substrates to each other and hardening the sealant, printing a sealant, bonding the substrates each other, and hardening the sealant and an inspection process line of cutting the bonded substrates into panel units and grinding and inspecting the unit panels. And, the GAP process line includes And, the present invention includes the processes of dropping LC on a first substrate using a dispenser, forming a main UV hardening sealant on a second substrate, bonding the first and second substrates to each other in a vacuum state, UV hardening the main UV hardening sealant, cutting the bonded substrates into cell units, grinding the cut substrates, and inspecting the grinded substrates finally.

摘要翻译： 公开了一种使用液晶滴下制造液晶显示器的系统和使用其制造液晶显示器的方法。 本发明包括在第一基板上滴下液晶的液晶形成线，在第二基板上形成密封剂的密封剂形成线，以及将两个基板彼此接合并使密封剂硬化的接合和硬化线，印刷密封剂 ，将基板粘合，使密封剂硬化，将粘接后的基板切割成面板单元的检查处理线，研磨和检查单元面板。 而且，GAP工艺线包括：本发明包括使用分配器在第一衬底上滴加LC的过程，在第二衬底上形成主UV硬化密封剂，在真空状态下将第一和第二衬底彼此接合 UV固化主UV固化密封剂，将粘合的基材切割成单元，研磨切割的基材，最后检查研磨的基材。

公开(公告)号：US20070208128A1

公开(公告)日：2007-09-06

申请号：US11677009

申请日：2007-02-20

申请人： Hyuk Jung ,  Jong Lim ,  Tae Kang

发明人： Hyuk Jung ,  Jong Lim ,  Tae Kang

IPC分类号： C08K3/22 ,  C08F290/04

CPC分类号： C08L69/00 ,  C08G77/44 ,  C08G77/70 ,  C08K3/22 ,  C08K9/00 ,  C08L27/12 ,  C08L27/18 ,  C08L51/04 ,  C08L51/085 ,  C08L83/04 ,  C08L2666/02 ,  C08L2666/04 ,  C08L2666/14

摘要： Disclosed herein is a polycarbonate resin composition with improved light reflectance and flame retardancy. The composition also displays a good balance of physical properties such as workability and appearance.

摘要翻译： 本文公开了具有改善的光反射率和阻燃性的聚碳酸酯树脂组合物。 该组合物还显示出物理性质如可加工性和外观的良好平衡。

公开(公告)号：US20070132514A1

公开(公告)日：2007-06-14

申请号：US11519668

申请日：2006-09-12

申请人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

发明人： Woo Chang ,  Jae Mun ,  Haecheon Kim ,  Jong Lim ,  Hong Ji ,  Ho Ahn

IPC分类号： H03F3/68

CPC分类号： H03F3/602 ,  H03F3/211 ,  H03F2200/366 ,  H03F2200/447 ,  H03F2200/543 ,  H03F2203/21178

摘要： Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

摘要翻译： 提供了具有补偿电抗分量的连接结构的功率器件，其中配置并连接晶体管，以通过补偿导致由于用于连接多个元件的传输线引起的相位差的电抗分量来最小化由热引起的晶体管性质的劣化 的晶体管并联，使得用于高频功率放大器的功率器件输出高功率，并将由高输出功率产生的热量传输到散热器。

公开(公告)号：US20070131971A1

公开(公告)日：2007-06-14

申请号：US11634614

申请日：2006-12-06

申请人： Yong Kim ,  Eun Nam ,  Ho Kim ,  Sang Lee ,  Dong Jun ,  Hong Lee ,  Seon Hong ,  Dong Kim ,  Jong Lim ,  Myoung Oh

发明人： Yong Kim ,  Eun Nam ,  Ho Kim ,  Sang Lee ,  Dong Jun ,  Hong Lee ,  Seon Hong ,  Dong Kim ,  Jong Lim ,  Myoung Oh

IPC分类号： H01L31/00

CPC分类号： H01L29/7371 ,  H01L29/0817 ,  H01L29/41708 ,  H01L29/66318

摘要： Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.

摘要翻译： 提供了可以提高数据处理速度的异质结双极晶体管（HBT）和制造异质结双极晶体管的方法。 HBT包括半绝缘复合基板，形成在半绝缘复合基板上的副集电极层，在副集电极层的预定部分上彼此隔开预定距离设置的一对集电极， 集电极层和设置在集电极之间的基极层，在基极层的预定部分上彼此隔开预定距离设置的一对基底电极，设置在基极之间的发射极层叠层和发射极电极， 形成在发射极层堆叠上，并且包括具有比发射极层堆叠的线宽宽的线宽的部分，其中发射极电极的两个侧壁分别与一对基底电极的内壁对齐，并且侧壁 集电极层和基极层位于该对基极的一对基极的外侧壁之间。

公开(公告)号：US20070072995A1

公开(公告)日：2007-03-29

申请号：US11522231

申请日：2006-09-15

申请人： Tae Kang ,  Sung Min ,  Jong Lim ,  Kyung Seo

发明人： Tae Kang ,  Sung Min ,  Jong Lim ,  Kyung Seo

IPC分类号： C08L53/00 ,  C08L69/00 ,  H01L21/00 ,  B32B27/00

CPC分类号： C08L23/22 ,  C08L23/0869 ,  C08L23/16 ,  C08L25/12 ,  C08L51/04 ,  C08L51/085 ,  C08L53/00 ,  C08L55/02 ,  C08L69/00 ,  C08L2666/18 ,  C08L2666/06 ,  C08L2666/24 ,  C08L2666/14 ,  C08L2666/02 ,  C08L2666/04

摘要： A thermoplastic composition and its use as a molded article and as housing or a part of electronic device are disclosed. The thermoplastic composition includes one or more of a polycarbonate resin, an ethylene-alkyl (meth)acrylate copolymer resin, a rubber modified vinyl graft copolymer resin, and a vinyl copolymer. The thermoplastic compositions described herein have one or more of improved impact strength, flowability, and thermal stability.

摘要翻译： 公开了一种热塑性组合物及其作为模制品和作为壳体或电子器件的一部分的用途。 热塑性组合物包括聚碳酸酯树脂，乙烯 - （甲基）丙烯酸烷基酯共聚物树脂，橡胶改性的乙烯基接枝共聚物树脂和乙烯基共聚物中的一种或多种。 本文所述的热塑性组合物具有改进的冲击强度，流动性和热稳定性中的一种或多种。

公开(公告)号：US20060094820A1

公开(公告)日：2006-05-04

申请号：US11260700

申请日：2005-10-27

申请人： Bong Lee ,  Kyung Kim ,  Sung Min ,  Jong Lim

发明人： Bong Lee ,  Kyung Kim ,  Sung Min ,  Jong Lim

IPC分类号： C08L51/00

CPC分类号： C08L69/00 ,  C08L23/00 ,  C08L51/00 ,  C08L67/03 ,  C08L2205/12 ,  C08L2666/02

摘要： A polycarbonate composition and its use as a molded article and as housing or a part of electronic device are disclosed. The polycarbonate composition includes a polycarbonate resin, a liquid crystalline polymer resin, a core-shell grafted copolymer and a low molecular weight polyolefin. The composition has an impact strength of at least about 68 kg·cm/cm when a specimen of the composition is subject to a chemical treatment and the chemically treated specimen is tested according to the standard ASTM D256 (⅛″ notched). The composition has an impact resistance of exhibiting substantially no cracking when a specimen of the composition is subject to a chemical treatment and the chemically treated specimen is tested at 0.6 m according to the standard ASTM D3029. The chemical treatment includes submerging the specimen in paint thinner for 20 seconds and thereafter drying the specimen at 70° C. for 5 minutes. Further, the composition has a fatigue resistance of at least about 130,000 when a specimen of the composition is tested at 4000 psi at 5 times per second according to the standard ASTM D638.

摘要翻译： 公开了一种聚碳酸酯组合物及其作为模制品和作为壳体或电子器件的一部分的用途。 聚碳酸酯组合物包括聚碳酸酯树脂，液晶聚合物树脂，核 - 壳接枝共聚物和低分子量聚烯烃。 当组合物的试样进行化学处理并根据标准ASTM D256（1/8“缺口）测试化学处理的试样时，该组合物具有至少约68kg.cm / cm的冲击强度。 当组合物的试样进行化学处理并且根据标准ASTM D3029在0.6μm下测试化学处理的试样时，该组合物具有显着实质上没有破裂的抗冲击性。 化学处理包括将样品浸入漆料稀释剂20秒，然后在70℃下干燥试样5分钟。 此外，当根据标准ASTM D638以4000psi每秒5次测试组合物的样品时，组合物的耐疲劳性为至少约130,000。

公开(公告)号：US20060065502A1

公开(公告)日：2006-03-30

申请号：US11056225

申请日：2005-02-14

申请人： In Joo ,  Jae Jang ,  Jae Lee ,  Sang Yang ,  Myung Kim ,  Jong Lim

发明人： In Joo ,  Jae Jang ,  Jae Lee ,  Sang Yang ,  Myung Kim ,  Jong Lim

IPC分类号： F16H45/02

CPC分类号： F16H45/02 ,  F16H41/28 ,  F16H2045/0294

摘要： A torque converter for a vehicle includes a front cover integrally formed with a boss to which a crank shaft of an engine side is connected, an impeller connected to the front cover to rotate together with the front cover, a turbine disposed facing the impeller, a stator disposed between the impeller and the turbine to convert flow of oil directed from the turbine, a lockup clutch mechanism for directly connecting the engine to the turbine. A blade of the impeller and/or the turbine is provided with inner and outer projections coupled to shell and core of the impeller and/or the turbine. Each of the inner and outer and inner projections includes a base located on a slit formed on the shell/core and an extending section extending from the base, the extending section being bent after penetrating the slit.

摘要翻译： 一种用于车辆的变矩器，包括：前盖，其整体地形成有与发动机侧的曲轴连接的凸台;连接到前盖的叶轮与前盖一起旋转，与所述叶轮相对设置的涡轮机; 定子布置在叶轮和涡轮之间以转换从涡轮机引导的油流，用于将发动机直接连接到涡轮机的锁止离合器机构。 叶轮和/或涡轮机的叶片设置有联接到叶轮和/或涡轮机的壳和芯的内部和外部突出部。 内外凸部分别具有形成在壳/芯上的狭缝上的基部和从基部延伸的延伸部，该延伸部在穿透狭缝后弯曲。